Advanced Technical Information
HiPerFETTM
Power MOSFETs
Q-Class
IXFH 26N55Q
IXFT 26N55Q
VDSS
ID25
= 550 V
= 26 A
RDS(on) = 0.23 Ω
trr ≤ 250 ns
N-ChannelEnhancementMode
Avalanche Rated, Low Qg, High dv/dt
Symbol
TestConditions
Maximum Ratings
TO-247AD(IXFH)
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
550
550
V
V
VGS
VGSM
Continuous
Transient
±30
±40
V
V
(TAB)
ID25
IDM
IAR
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
26
104
26
A
A
A
TO-268 (D3) ( IXFT)
EAR
EAS
TC = 25°C
50
mJ
J
2.0
G
(TAB)
S
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 2 Ω
,
20
V/ns
G = Gate
D
= Drain
PD
TC = 25°C
375
W
S = Source TAB = Drain
TJ
TJM
Tstg
-55 to +150
150
-55 to +150
°C
°C
°C
TL
1.6 mm (0.063 in) from case for 10 s
Mounting torque
300
°C
Features
Md
1.13/10 Nm/lb.in.
z IXYS advanced low Qg process
z Low gate charge and capacitances
- easier to drive
Weight
TO-247
TO-268
6
4
g
g
- faster switching
z International standard packages
z Low RDS (on)
Symbol
TestConditions
Characteristic Values
z Rated for unclamped Inductive load
switching (UIS) rated
(TJ = 25°C, unless otherwise specified)
min.
typ.
max.
z Molding epoxies meet UL 94 V-0
flammability classification
VDSS
VGS(th)
VGS = 0 V, ID = 250 µA
VDS = VGS, ID = 4 mA
550
2.5
V
V
4.5
IGSS
IDSS
VGS = ±30 VDC, VDS = 0
±100
nA
Advantages
VDS = V
T
= 25°C
25
1
µA
VGS = 0DVSS
TJJ = 125°C
mA
z
Easy to mount
Space savings
z
RDS(on)
V
= 10 V, ID = 0.5 ID25
0.23
Ω
PGuSlse test, t ≤ 300 µs, duty cycle d ≤ 2 %
z
High power density
© 2003 IXYS All rights reserved
DS99001(01/03)
