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IXFT23N80Q

型号：

IXFT23N80Q

描述：

HiPerFET功率MOSFET Q系列[ HiPerFET Power MOSFETs Q-Class ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

581 K

下载PDF手册
HiPerFETTM  
PowerMOSFETs  
Q-Class  
IXFH23N80Q  
IXFT23N80Q  
VDSS  
ID25  
= 800 V  
=
23 A  
RDS(on) = 0.42 Ω  
N-ChannelEnhancementMode  
AvalancheRated,  
trr ≤ 250 ns  
Low Qg,High dv/dt  
TO-247 AD (IXFH)  
Symbol  
TestConditions  
Maximum Ratings  
VDSS  
VDGR  
T
= 25°C to 150°C  
800  
800  
V
V
TJJ = 25°C to 150°C; RGS = 1 MΩ  
(TAB)  
VGS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
ID25  
IDM  
IAR  
T
= 25°C  
23  
92  
23  
A
A
A
TO-268 (D3) ( IXFT)  
TC = 25°C, pulse width limited by TJM  
TCC = 25°C  
G
EAR  
EAS  
T
= 25°C  
45  
1.5  
mJ  
J
S
TCC = 25°C  
G = Gate  
S = Source  
dv/dt  
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS  
,
5
V/ns  
TAB = Drain  
TJ ≤ 150°C, RG = 2 Ω  
PD  
TC = 25°C  
500  
W
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
Features  
z
IXYS advanced low Qg process  
International standard packages  
Epoxy meets UL 94 V-0 flammability  
classification  
z
z
TL  
1.6 mm (0.063 in) from case for 10 s  
300  
°C  
Md  
Mounting torque  
Mounting Force  
TO-247  
TO-268  
1.13/10 Nm/lb.in.  
z
z
z
Low RDS (on) low Qg  
FC  
20...120/4.5...27 N/lb  
Avalanche energy and current rated  
Fast intrinsic rectifier  
Weight  
TO-247  
TO-268  
6
4
g
g
Advantages  
z
Easy to mount  
Space savings  
High power density  
z
z
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
VDSS  
VGS = 0 V, ID = 250 µA  
VDS = VGS, ID = 3 mA  
800  
2.5  
V
V
VGS(th)  
4.5  
IGSS  
IDSS  
VGS = 30 VDC, VDS = 0  
100 nA  
VDS = V  
T = 25°C  
25 µA  
VGS = 0DVSS  
TJJ = 125°C  
1
mA  
RDS(on)  
V
= 10 V, ID = 0.5 • I  
0.42  
Ω
PuGSlse test, t ≤ 300 µs,Dd25uty cycle d ≤ 2 %  
© 2004 IXYS All rights reserved  
DS99060A(02/04)  
IXFH23N80Q  
IXFT23N80Q  
TO-247 AD (IXFH) Outline  
Symbol  
gfs  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
VDS = 10 V; ID = 0.5 • ID25, pulse test  
18  
26  
S
1
2
3
Terminals:  
1 - Gate  
Ciss  
Coss  
Crss  
4900  
500  
pF  
pF  
pF  
2 - Drain  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
3 - Source  
Tab - Drain  
130  
td(on)  
tr  
td(off)  
tf  
28  
27  
74  
14  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Dim.  
Millimeter  
Inches  
RG = 1.5 Ω (External),  
Min.  
Max.  
Min.  
Max.  
A
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185  
.087  
.059  
.209  
.102  
.098  
A
A12  
Qg(on)  
Qgs  
130  
26  
nC  
nC  
nC  
b
b12  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040  
.065  
.113  
.055  
.084  
.123  
b
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
55  
C
D
E
.4  
20.80  
15.75  
.8  
21.46  
16.26  
.016  
.819  
.610  
.031  
.845  
.640  
RthJC  
RthCK  
0.25 K/W  
e
5.20  
19.81  
5.72  
20.32  
4.50  
0.205  
.780  
0.225  
.800  
.177  
L
L1  
TO-247  
0.25  
K/W  
∅P  
Q
3.55  
5.89  
3.65  
6.40  
.140  
0.232  
.144  
0.252  
R
S
4.32  
5.49  
.170  
.216  
6.15 BSC  
242 BSC  
Source-DrainDiode  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
TO-268(IXFT)Outline  
Symbol  
IS  
TestConditions  
min.  
typ. max.  
VGS = 0 V  
23  
A
A
ISM  
Repetitive; pulse width limited by TJM  
92  
VSD  
IF = IS, VGS = 0 V,  
1.5  
V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %  
trr  
250  
ns  
µC  
A
QRM  
IRM  
1
9
IF = IS -di/dt = 100 A/µs, VR = 100 V  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered byoneormore  
ofthefollowingU.S.patents:  
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1  
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343  
Fig. 1. Output Characteristics  
Fig. 2. Extended Output Characteristics  
@ 25 C  
º
@ 25 C  
º
22  
20  
18  
16  
14  
12  
10  
8
45  
40  
35  
30  
25  
20  
15  
10  
5
VGS = 10V  
V
GS  
= 10V  
6V  
7V  
6V  
5.5V  
5V  
6
5V  
4
4.5V  
4.5V  
2
0
0
0
3
6
9
12 15 18 21 24 27 30  
0
1
2
3
4
5
6
7
8
9
10  
VD S - Volts  
VD S - Volts  
Fig. 3. Output Characteristics  
@ 125 C  
Fig. 4. RDS(on Normalized to 0.5 ID25  
Value vs. Junction Temperature  
)
º
2.8  
2.5  
2.2  
1.9  
1.6  
1.3  
1
22  
20  
18  
16  
14  
12  
10  
8
VGS = 10V  
6V  
VGS = 10V  
5V  
ID = 23A  
ID = 11.5A  
6
4.5V  
4
0.7  
0.4  
2
0
-50  
-25  
0
25  
50  
75  
100 125 150  
0
2
4
6
8
10 12 14 16 18 20 22  
TJ - Degrees Centigrade  
VD S - Volts  
Fig. 5. RDS(on) Normalized to  
0.5 ID25 Value vs. ID  
Fig. 6. Drain Current vs. Case  
Temperature  
2.8  
2.6  
2.4  
2.2  
2
27  
24  
21  
18  
15  
12  
9
VGS = 10V  
TJ = 125ºC  
1.8  
1.6  
1.4  
1.2  
1
6
TJ = 25ºC  
3
0.8  
0
0
5
10 15 20 25 30 35 40 45 50  
-50  
-25  
0
25  
50  
75  
100 125 150  
I D - Amperes  
TC - Degrees Centigrade  
© 2004 IXYS All rights reserved  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
35  
30  
25  
20  
15  
10  
5
60  
50  
40  
30  
20  
10  
0
TJ = -40ºC  
25ºC  
125ºC  
TJ = 125ºC  
25ºC  
-40ºC  
0
3.5  
0.4  
0
4
4.5  
5
5.5  
6
0
5
10  
15  
20  
25  
30  
35  
40  
VG S - Volts  
I D - Amperes  
Fig. 9. Source Current vs.  
Source-To-Drain Voltage  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
70  
60  
50  
40  
30  
20  
10  
0
VDS = 400V  
ID = 11.5A  
IG = 10mA  
TJ = 125ºC  
TJ = 25ºC  
0.5  
0.6  
0.7  
0.8  
0.9  
1
1.1  
1.2  
0
20  
40  
60  
80  
100  
120  
140  
VS D - Volts  
Q G - nanoCoulombs  
Fig. 11. Capacitance  
10000  
1000  
100  
C
C
iss  
oss  
C
rss  
30  
f = 1MHz  
10  
5
10  
15  
20  
25  
35  
40  
VD S - Volts  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered byoneormore  
ofthefollowingU.S.patents:  
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1  
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343  
Fig . 12. M axim u m T r an s ie n t T h e r m al Re s is tan ce  
1. 00  
0. 10  
0. 01  
1
10  
10 0  
1 00 0  
Puls e W idth - millis ec onds  
© 2004 IXYS All rights reserved  
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