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IXFT20N60Q

型号：

IXFT20N60Q

描述：

HiPerFET功率MOSFET Q系列[ HiPerFET Power MOSFETs Q-Class ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

4 页

PDF大小：

149 K

下载PDF手册
HiPerFETTM  
PowerMOSFETs  
Q-Class  
IXFH 20N60Q  
IXFT 20N60Q  
VDSS  
ID25  
= 600 V  
20 A  
=
RDS(on) = 0.35 Ω  
trr ≤ 250ns  
N-ChannelEnhancementMode  
Avalanche Rated, High dv/dt,  
Low Gate Charge and Capacitances  
Symbol  
TestConditions  
Maximum Ratings  
TO-247AD(IXFH)  
VDSS  
VDGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGS = 1 MΩ  
600  
600  
V
V
VGS  
VGSM  
Continuous  
Transient  
±30  
±40  
V
V
(TAB)  
ID25  
IDM  
IAR  
TC = 25°C  
20  
80  
20  
A
A
A
TC = 25°C, pulse width limited by TJM  
TC = 25°C  
TO-268 (IXFT) Case Style  
EAR  
EAS  
TC = 25°C  
TC = 25°C  
30  
mJ  
J
1.5  
dv/dt  
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS  
TJ ≤ 150°C, RG = 2 Ω  
,
15  
V/ns  
G
(TAB)  
S
PD  
TC = 25°C  
300  
W
G = Gate  
D = Drain  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
S = Source  
TAB = Drain  
Features  
TL  
1.6 mm (0.062 in.) from case for 10 s  
Mounting torque  
300  
°C  
z IXYS advanced low gate charge  
process  
z International standard packages  
z Low gate charge and capacitance  
- easier to drive  
Md  
1.13/10 Nm/lb.in.  
Weight  
TO-247AD  
TO-268  
6
4
g
g
- faster switching  
z Low RDS (on)  
Symbol  
TestConditions  
Characteristic Values  
z Unclamped Inductive Switching (UIS)  
rated  
z Molding epoxies meet UL 94 V-0  
flammability classification  
(TJ = 25°C, unless otherwise specified)  
Min. Typ.  
Max.  
VDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 µA  
VDS = VGS, ID = 4 mA  
VGS = ±30 VDC, VDS = 0  
600  
V
V
2.0  
4.5  
±100  
nA  
Advantages  
IDSS  
VDS = VDSS  
VGS = 0 V  
TJ = 25°C  
TJ = 125°C  
25  
1
µA  
mA  
z
Easy to mount  
Space savings  
z
RDS(on)  
VGS = 10 V, ID = 0.5 ID25  
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %  
0.35  
Ω
z
High power density  
© 2003 IXYS All rights reserved  
DS98549C(03/03)  
IXFH 20N60Q  
IXFT 20N60Q  
Symbol  
gfs  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ. Max.  
TO-247 AD Outline  
VDS = 10 V; ID = 0.5 ID25, pulse test  
10  
20  
S
Ciss  
Coss  
Crss  
3300  
410  
pF  
pF  
pF  
1
2
3
VGS = 0 V, VDS = 25 V, f = 1 MHz  
130  
td(on)  
tr  
td(off)  
tf  
20  
20  
45  
20  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25  
Terminals: 1 - Gate  
3 - Source  
2 - Drain  
Tab - Drain  
RG = 1.5 Ω (External)  
Dim.  
Millimeter  
Inches  
Min.  
Max.  
Min. Max.  
Qg(on)  
Qgs  
90  
20  
45  
nC  
nC  
nC  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25  
Qgd  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
RthJC  
RthCK  
0.42  
K/W  
K/W  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
(TO-247)  
0.25  
20.80 21.46  
15.75 16.26  
e
5.20  
5.72 0.205 0.225  
L
L1  
19.81 20.32  
4.50  
.780 .800  
.177  
Source-DrainDiode  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
P
3.55  
5.89  
3.65  
.140 .144  
Q
6.40 0.232 0.252  
Symbol  
IS  
TestConditions  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
VGS = 0 V  
20  
80  
A
ISM  
Repetitive; pulse width limited by TJM  
A
V
TO-268 Outline  
VSD  
IF = IS, VGS = 0 V,  
1.5  
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %  
trr  
QRM  
IRM  
250  
ns  
µC  
A
IF = IS, -di/dt = 100 A/µs, VR = 100 V  
0.85  
8
Min Recommended Footprint  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered byoneormore  
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1  
ofthefollowingU.S.patents:  
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343  
IXFH 20N60Q  
IXFT 20N60Q  
Fig. 2. Extended Output Characteristics  
Fig. 1. Output Characteristics  
@ 25 Deg. C  
@ 25 deg. C  
20  
17 . 5  
15  
48  
40  
32  
24  
16  
8
VGS = 10V  
9V  
VGS = 10V  
9V  
8V  
7V  
6V  
8V  
7V  
6V  
12 . 5  
10  
7.5  
5
5V  
2.5  
0
5V  
0
0
1
2
3
4
5
6
7
8
0
4
8
12  
16  
20  
24  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID25 Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics  
@ 125 Deg. C  
20  
17 . 5  
15  
3
VGS = 10V  
9V  
8V  
7V  
6V  
VGS = 10V  
2.5  
12 . 5  
10  
2
ID = 20A  
1. 5  
7.5  
5
5V  
ID= 10A  
1
2.5  
0
0.5  
0
3
6
9
12  
15  
18  
-50 -25  
0
25 50 75 100 125 150  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID25  
Value vs. ID  
Fig. 6. Drain Current vs. Case  
Temperature  
24  
20  
16  
12  
8
3
2.5  
2
VGS = 10V  
TJ= 125ºC  
1.5  
1
TJ = 25ºC  
40  
4
0
0.5  
-50 -25  
0
25 50 75 100 125 150  
0
10  
20  
30  
50  
ID - Amperes  
TC - Degrees Centigrade  
© 2003 IXYS All rights reserved  
IXFH 20N60Q  
IXFT 20N60Q  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
40  
35  
30  
25  
20  
15  
10  
5
42  
36  
30  
24  
18  
12  
6
TJ = -40ºC  
25ºC  
125ºC  
TJ = -40ºC  
25ºC  
125ºC  
0
0
0
10  
20  
30  
40  
50  
60  
3.5  
4
4.5  
5
5.5  
6
6.5  
7
VGS - Volts  
ID - Amperes  
Fig. 9. Source Current vs. Source-To-Drain  
Voltage  
Fig. 10. Gate Charge  
60  
10  
VDS = 300V  
50  
40  
30  
20  
10  
ID = 10A  
8
6
4
2
0
IG = 10mA  
TJ = 125ºC  
TJ = 25ºC  
0
0.3  
0.5  
0.7  
0.9  
1.1  
0
20  
40  
60  
80  
100  
VSD - Volts  
QG - nanoCoulombs  
Fig. 12. Maximum Transient Thermal  
Resistance  
Fig. 11. Capacitance  
10000  
10 0 0  
10 0  
1
f = 1M Hz  
C
C
iss  
0.1  
oss  
C
rss  
0.01  
0
5
10  
15  
20 25  
30 35 40  
1
10  
100  
1000  
VDS - Volts  
Pulse Width - milliseconds  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered byoneormore  
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1  
ofthefollowingU.S.patents:  
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343  
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