IXFH20N100P
IXFT20N100P
Symbol
Test Conditions
Characteristic Values
TO-247 (IXFH) Outline
(TJ = 25°C unless otherwise specified)
Min.
Typ.
Max.
gfs
VDS = 20V, ID = 0.5 • ID25, Note 1
8
14
S
Ciss
Coss
Crss
7300
456
55
pF
pF
pF
∅ P
VGS = 0V, VDS = 25V, f = 1MHz
Gate input resistance
RGi
1.20
Ω
td(on)
tr
td(off)
tf
40
37
56
45
ns
ns
ns
ns
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 2Ω (External)
e
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
Qg(on)
Qgs
126
50
nC
nC
nC
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
55
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
20.80 21.46
15.75 16.26
RthJC
RthCS
0.19 °C/W
°C/W
e
L
L1
5.20
5.72 0.205 0.225
19.81 20.32
4.50
(TO-247)
0.21
.780 .800
.177
∅P 3.55
3.65
.140 .144
Q
5.89
6.40 0.232 0.252
Source-Drain Diode
TJ = 25°C unless otherwise specified)
Characteristic Values
R
S
4.32
6.15 BSC
5.49
.170 .216
242 BSC
Min.
Typ.
Max.
IS
VGS = 0V
20
A
A
V
TO-268 Outline
ISM
VSD
Repetitive, pulse width limited by TJM
IF = IS, VGS = 0V, Note 1
80
1.5
trr
300 ns
IF = 10A, -di/dt = 100A/μs
QRM
IRM
0.9
μC
VR = 100V, VGS = 0V
9.0
A
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
by one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
