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IXFT18N100Q3

型号:

IXFT18N100Q3

描述:

HiperFETTM功率MOSFET Q3级[ HiperFETTM Power MOSFETs Q3-Class ]

品牌:

IXYS[ IXYS CORPORATION ]

页数:

5 页

PDF大小:

130 K

Advance Technical Information  
HiperFETTM  
Power MOSFETs  
Q3-Class  
VDSS = 1000V  
ID25 = 18A  
RDS(on) 660mΩ  
IXFT18N100Q3  
IXFH18N100Q3  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-268 (IXFT)  
Fast Intrinsic Rectifier  
G
S
D (Tab)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1MΩ  
1000  
1000  
V
V
TO-247 (IXFH)  
VDGR  
VGSS  
VGSM  
Continuous  
Transient  
± 30  
± 40  
V
V
ID25  
IDM  
TC = 25°C  
18  
60  
A
A
G
TC = 25°C, Pulse Width Limited by TJM  
D
D (Tab)  
S
IA  
TC = 25°C  
TC = 25°C  
18  
A
J
EAS  
1.5  
G = Gate  
D
= Drain  
S = Source  
Tab = Drain  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25°C  
50  
V/ns  
W
830  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
Features  
-55 ... +150  
z
Low Intrinsic Gate Resistance  
International Standard Packages  
Low Package Inductance  
Fast Intrinsic Rectifier  
TL  
Tsold  
1.6mm (0.062in.) from Case for 10s  
Plastic Body for 10 seconds  
300  
260  
°C  
°C  
z
z
z
z
Md  
Mounting Torque (TO-247)  
1.13 / 10  
Nm/lb.in.  
Low RDS(on) and QG  
Weight  
TO-268  
TO-247  
4.0  
6.0  
g
g
Advantages  
z
High Power Density  
Easy to Mount  
Space Savings  
z
z
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
1000  
3.5  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 1mA  
VDS = VGS, ID = 4mA  
VGS = ±30V, VDS = 0V  
VDS = VDSS, VGS = 0V  
V
V
Applications  
6.5  
z
DC-DC Converters  
Battery Chargers  
Switch-Mode and Resonant-Mode  
z
±100 nA  
z
IDSS  
25 μA  
Power Supplies  
DC Choppers  
Temperature and Lighting Controls  
TJ = 125°C  
1.25 mA  
z
z
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
660 mΩ  
DS100390(10/11)  
© 2011 IXYS CORPORATION, All Rights Reserved  
IXFT18N100Q3  
IXFH18N100Q3  
Symbol  
Test Conditions  
Characteristic Values  
TO-268 Outline  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 20V, ID = 0.5 • ID25, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
9
16  
S
Ciss  
Coss  
Crss  
4890  
400  
34  
pF  
pF  
pF  
RGi  
Gate Input Resistance  
0.20  
Ω
td(on)  
tr  
td(off)  
tf  
37  
32  
40  
13  
ns  
ns  
ns  
ns  
Resistive Switching Times  
Terminals: 1 - Gate  
3 - Source  
2,4 - Drain  
V
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 3Ω (External)  
Qg(on)  
Qgs  
90  
33  
37  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
RthJC  
RthCS  
0.15 °C/W  
°C/W  
TO-247  
0.21  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
IS  
VGS = 0V  
18  
A
A
V
TO-247 Outline  
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
72  
1.4  
300  
P  
trr  
ns  
A
1
2
3
IF = 9A, -di/dt = 100A/μs  
IRM  
QRM  
11.0  
1.5  
VR = 100V, VGS = 0V  
μC  
e
Terminals: 1 - Gate  
2 - Drain  
3 - Source  
Note  
1. Pulse test, t 300μs, duty cycle, d 2%.  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min. Max.  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a  
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test  
conditions, and dimensions without notice.  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
e
L
L1  
5.20  
19.81 20.32  
4.50  
5.72 0.205 0.225  
.780 .800  
.177  
P 3.55  
3.65  
.140 .144  
Q
5.89  
6.40 0.232 0.252  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXFT18N100Q3  
IXFH18N100Q3  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
40  
35  
30  
25  
20  
15  
10  
5
18  
16  
14  
12  
10  
8
VGS = 10V  
VGS = 10V  
9V  
8V  
8V  
6
4
7V  
6V  
7V  
6V  
2
0
0
0
0
0
1
2
3
4
5
6
7
8
9
10  
11  
0
5
10  
15  
20  
25  
30  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 9A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
18  
16  
14  
12  
10  
8
3.4  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
VGS = 10V  
VGS = 10V  
7V  
I D = 18A  
I D = 9A  
6
4
6V  
5V  
2
0
2
4
6
8
10  
12  
14  
16  
18  
20  
22  
24  
26  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
Fig. 5. RDS(on) Normalized to ID = 9A Value vs.  
Drain Current  
20  
18  
16  
14  
12  
10  
8
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
VGS = 10V  
TJ = 125ºC  
6
TJ = 25ºC  
4
2
0
4
8
12  
16  
20  
24  
28  
32  
36  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
ID - Amperes  
TC - Degrees Centigrade  
© 2011 IXYS CORPORATION, All Rights Reserved  
IXFT18N100Q3  
IXFH18N100Q3  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
35  
30  
25  
20  
15  
10  
5
40  
35  
30  
25  
20  
15  
10  
5
TJ = - 40ºC  
25ºC  
125ºC  
TJ = 125ºC  
25ºC  
- 40ºC  
0
0
4.0  
0.3  
0
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
8.5  
9.0  
1.2  
40  
0
5
10  
15  
20  
25  
30  
35  
VGS - Volts  
ID - Amperes  
Fig. 10. Gate Charge  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
16  
14  
12  
10  
8
60  
50  
40  
30  
20  
10  
0
VDS = 500V  
I D = 9A  
I G = 10mA  
TJ = 125ºC  
6
4
TJ = 25ºC  
2
0
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
0
10  
20  
30  
40  
50  
60  
70  
80  
90 100 110 120 130  
VSD - Volts  
QG - NanoCoulombs  
Fig. 12. Forward-Bias Safe Operating Area  
Fig. 11. Capacitance  
100  
10  
1
10,000  
1,000  
100  
RDS(on) Limit  
C
iss  
25µs  
100µs  
C
oss  
TJ = 150ºC  
TC = 25ºC  
1ms  
C
Single Pulse  
= 1 MHz  
5
f
rss  
10  
0.1  
10  
15  
20  
25  
30  
35  
10  
100  
1,000  
VDS - Volts  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXFT18N100Q3  
IXFH18N100Q3  
Fig. 13 Maximum Transient Thermal Impedance  
sdasd  
0.4  
0.1  
0.01  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2011 IXYS CORPORATION, All Rights Reserved  
IXYS REF: F_18N100Q3(Q7) 9-28-11  
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