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IXFT150N17T2

型号：

IXFT150N17T2

描述：

TrenchT2 HiperFET功率MOSFET[ TrenchT2 HiperFET Power MOSFET ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

180 K

下载PDF手册
Advance Technical Information  
TrenchT2TM HiperFETTM  
Power MOSFET  
VDSS = 175V  
ID25 = 150A  
RDS(on) ≤ 12.0mΩ  
≤ 160ns  
IXFH150N17T2  
IXFT150N17T2  
trr  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Diode  
TO-247 (IXFH)  
Symbol  
Test Conditions  
Maximum Ratings  
VDSS  
VDGR  
TJ = 25°C to 175°C  
TJ = 25°C to 175°C, RGS = 1MΩ  
175  
175  
V
V
G
D
S
D (Tab)  
VGSS  
VGSM  
Continuous  
Transient  
± 20  
± 30  
V
V
TO-268 (IXFT)  
ID25  
IDM  
TC = 25°C  
TC = 25°C, Pulse Width Limited by TJM  
150  
400  
A
A
G
IA  
EAS  
TC = 25°C  
TC = 25°C  
75  
1.0  
A
J
S
D (Tab)  
dv/dt  
PD  
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C  
TC = 25°C  
15  
V/ns  
W
G = Gate  
S = Source  
D
= Drain  
880  
Tab = Drain  
TJ  
TJM  
Tstg  
-55 ... +175  
175  
-55 ... +175  
°C  
°C  
°C  
Features  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
Plastic Body for 10s  
300  
260  
°C  
°C  
z High Current Handling Capability  
z Fast Intrinsic Diode  
Md  
Mounting Torque (TO-247)  
1.13/10  
Nm/lb.in.  
z Dynamaic dv/dt Rated  
z Avalanche Rated  
Weight  
TO-247  
TO-268  
6
4
g
g
z
Low RDS(on)  
Advantages  
z
Easy to Mount  
Space Savings  
High Power Density  
z
z
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
175  
2.5  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 1mA  
VGS = ± 20V, VDS = 0V  
VDS = VDSS, VGS= 0V  
V
V
Applications  
4.5  
z DC-DC Converters  
z Battery Chargers  
± 200 nA  
z Switch-Mode and Resonant-Mode  
Power Supplies  
IDSS  
10 μA  
TJ = 150°C  
1.5 mA  
z DC Choppers  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
9.7  
12.0 mΩ  
z AC Motor Drives  
z Uninterruptible Power Supplies  
z High Speed Power Switching  
Applications  
DS100229(01/10)  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXFH150N17T2  
IXFT150N17T2  
Symbol  
Test Conditions  
Characteristic Values  
TO-247 (IXFH) Outline  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 10V, ID = 60A, Note 1  
100  
165  
S
Ciss  
Coss  
Crss  
14.6  
1100  
136  
nF  
pF  
pF  
∅ P  
VGS = 0V, VDS = 25V, f = 1MHz  
1
2
3
td(on)  
tr  
td(off)  
tf  
32  
16  
50  
20  
ns  
ns  
ns  
ns  
Resistive Switching Times  
V
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
e
RG = 1Ω (External)  
Terminals: 1 - Gate  
2 - Drain  
3 - Source  
Qg(on)  
Qgs  
233  
67  
nC  
nC  
nC  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
63  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
RthJC  
RthCS  
0.17 °C/W  
°C/W  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
TO-247  
0.21  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
Source-Drain Diode  
e
5.20  
5.72 0.205 0.225  
L
L1  
19.81 20.32  
4.50  
.780 .800  
.177  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
150  
600  
1.3  
∅P 3.55  
3.65  
.140 .144  
Q
5.89  
6.40 0.232 0.252  
IS  
VGS = 0V  
A
A
V
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = 100A, VGS = 0V, Note 1  
TO-268 (IXFT) Outline  
trr  
160 ns  
IF = 75A, -di/dt = 100A/μs  
IRM  
QRM  
7.80  
0.34  
A
VR = 75V, VGS = 0V  
μC  
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
Terminals: 1 - Gate  
3 - Source  
2 - Drain  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a  
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test  
conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXFH150N17T2  
IXFT150N17T2  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
160  
140  
120  
100  
80  
350  
300  
250  
200  
150  
100  
50  
VGS = 10V  
VGS = 10V  
8V  
8V  
7V  
7V  
6V  
6V  
60  
40  
5V  
4V  
20  
5V  
0
0
0
1
2
3
4
5
6
7
8
9
10  
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 75A Value  
vs. Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 150ºC  
160  
140  
120  
100  
80  
3.4  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
VGS = 10V  
7V  
VGS = 10V  
6V  
5V  
4V  
ID = 150A  
ID = 75A  
60  
40  
20  
0
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
5.0  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 75A Value  
vs. Drain Current  
Fig. 6. Drain Current vs. Case Temperature  
160  
140  
120  
100  
80  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
VGS = 10V  
TJ = 175ºC  
60  
TJ = 25ºC  
40  
20  
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
0
50  
100  
150  
200  
250  
300  
ID - Amperes  
TC - Degrees Centigrade  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXFH150N17T2  
IXFT150N17T2  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
200  
180  
160  
140  
120  
100  
80  
300  
250  
200  
150  
100  
50  
TJ = - 40ºC  
TJ = 150ºC  
25ºC  
25ºC  
- 40ºC  
150ºC  
60  
40  
20  
0
0
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
200  
220  
3.0  
0.3  
0
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
1.2  
40  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
300  
250  
200  
150  
100  
50  
VDS = 85V  
I D = 75A  
I G = 10mA  
TJ = 150ºC  
TJ = 25ºC  
0
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
0
20  
40  
60  
80  
100  
120 140 160  
180 200 220 240  
VSD - Volts  
QG - NanoCoulombs  
Fig. 12. Forward-Bias Safe Operating Area  
Fig. 11. Capacitance  
100  
10  
1
1,000  
100  
10  
R
Limit  
DS(on)  
= 1 MHz  
f
25µs  
C
iss  
100µs  
C
C
1ms  
oss  
10ms  
DC  
1
T
= 175ºC  
J
T
= 25ºC  
C
rss  
Single Pulse  
0.1  
0
5
10  
15  
20  
25  
30  
35  
1
10  
100  
1,000  
VDS - Volts  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXFH150N17T2  
IXFT150N17T2  
Fig. 14. Resistive Turn-on Rise Time  
Fig. 13. Resistive Turn-on Rise Time  
vs. Junction Temperature  
vs. Drain Current  
24  
23  
22  
21  
20  
19  
18  
17  
16  
15  
14  
24  
23  
22  
21  
20  
19  
18  
17  
16  
15  
14  
RG = 1Ω , VGS = 10V  
RG = 1ꢀ , VGS = 10V  
VDS = 85V  
VDS = 85V  
TJ = 125ºC  
I D = 150A  
I D = 75A  
TJ = 25ºC  
30  
40  
50  
60  
70  
80  
90  
100 110 120 130 140 150  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
TJ - Degrees Centigrade  
ID - Amperes  
Fig. 15. Resistive Turn-on Switching Times  
vs. Gate Resistance  
Fig. 16. Resistive Turn-off Switching Times  
vs. Junction Temperature  
500  
450  
400  
350  
300  
250  
200  
150  
100  
50  
80  
38  
34  
30  
26  
22  
18  
14  
10  
6
75  
70  
65  
60  
55  
50  
45  
40  
35  
75  
70  
65  
60  
55  
50  
45  
40  
35  
30  
t r  
t
d(on) - - - -  
tf  
t
d(off) - - - -  
RG = 1Ω, VGS = 10V  
VDS = 85V  
TJ = 125ºC, VGS = 10V  
VDS = 85V  
I D = 150A  
I D = 150A, 75A  
I D = 75A  
0
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
1
2
3
4
5
6
7
8
9
10  
TJ - Degrees Centigrade  
RG - Ohms  
Fig. 18. Resistive Turn-off Switching Times  
vs. Gate Resistance  
Fig. 17. Resistive Turn-off Switching Times  
vs. Drain Current  
600  
500  
400  
300  
200  
100  
0
300  
250  
200  
150  
100  
50  
22  
21  
20  
19  
18  
17  
16  
15  
75  
70  
65  
60  
55  
50  
45  
40  
tf  
t
d(off) - - - -  
t f  
t
d(off) - - - -  
RG = 1ꢀ, VGS = 10V  
DS = 85V  
TJ = 125ºC, VGS = 10V  
VDS = 85V  
V
I D = 150A  
TJ = 25ºC, 125ºC  
I D = 75A  
0
1
2
3
4
5
6
7
8
9
10  
30  
40  
50  
60  
70  
80  
90  
100 110 120 130 140 150  
ID - Amperes  
RG - Ohms  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXFH150N17T2  
IXFT150N17T2  
Fig. 19. Maximum Transient Thermal Impedance  
1.000  
0.100  
0.010  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF:F_150N17T2(7V)1-14-10  
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