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IXFR80N50P

型号：

IXFR80N50P

描述：

PolarHV HiPerFET功率MOSFET ISOPLUS247[ PolarHV HiPerFET Power MOSFET ISOPLUS247 ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

149 K

下载PDF手册
PolarHVTM HiPerFET  
Power MOSFET  
ISOPLUS247TM  
IXFR 80N50P  
VDSS = 500 V  
ID25 = 45 A  
RDS(on) ≤ 72 mΩ  
trr  
≤ 200 ns  
(Electrically Isolated Back Surface)  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Diode  
Symbol  
Test Conditions  
Maximum Ratings  
VDSS  
VDGR  
TJ = 25° C to 150° C  
TJ = 25° C to 150° C; RGS = 1 MΩ  
500  
500  
V
V
ISOPLUS247 (IXFR)  
E153432  
VGSM  
VGSM  
Transient  
Continuous  
40  
30  
V
V
ID25  
IDM  
TC =25° C  
45  
200  
A
A
TC = 25° C, pulse width limited by TJM  
G
D
ab)  
S
IAR  
EAR  
EAS  
TC =25° C  
TC =25° C  
TC =25° C  
80  
80  
3.5  
A
mJ  
J
G = Gate  
D = Drain  
S = Source  
dv/dt  
PD  
IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS  
TJ ≤150° C, RG = 2 Ω  
,
20  
V/ns  
Features  
l
Silicon chip on Direct-Copper-Bond  
substrate  
- High power dissipation  
- Isolated mounting surface  
- 2500V electrical isolation  
TC = 25° C  
360  
W
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
l
l
l
l
Low drain to tab capacitance(<30pF)  
Low RDS (on) HDMOSTM process  
TL  
Maximum lead temperature for soldering  
300  
°C  
FC  
Mounting force  
20..120/4.5..25  
N/lb  
V~  
g
Rugged polysilicon gate cell structure  
Rated for Unclamped Inductive Load  
Switching (UIS)  
VISOL  
Weight  
50/60 Hz, RMS, 1 minute  
2500  
5
l
Fast intrinsic Rectifier  
Applications  
l
DC-DC converters  
l
Battery chargers  
l
Symbol  
Test Conditions  
Characteristic Values  
Switched-mode and resonant-mode  
power supplies  
(TJ = 25° C unless otherwise specified)  
Min. Typ.  
Max.  
l
DC choppers  
BVDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 500 µA  
500  
V
V
l
AC motor control  
VDS = VGS, ID = 8 mA  
3.0  
5.0  
Advantages  
l
VGS  
=
30 VDC, VDS = 0  
200  
nA  
Easy assembly  
l
IDSS  
VDS = VDSS  
VGS = 0 V  
25  
2
µA  
mA  
Space savings  
TJ = 125° C  
l
High power density  
RDS(on)  
VGS = 10 V, ID = 40 A  
72 mΩ  
DS99438E(03/06)  
© 2006 IXYS All rights reserved  
IXFR 80N50P  
ISOPLUS247TM Outline  
Symbol  
gfs  
Test Conditions  
Characteristic Values  
(TJ = 25° C unless otherwise specified)  
Min.  
Typ.  
Max.  
VDS= 20 V; ID = 40 A, ID25, Note 1  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
45  
70  
S
Ciss  
Coss  
Crss  
12.7  
1280  
120  
nF  
pF  
pF  
td(on)  
tr  
td(off)  
tf  
25  
27  
70  
16  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 VDSS, ID = 40 A  
RG = 1 Ω (External)  
Qg(on)  
Qgs  
197  
70  
nC  
nC  
nC  
VGS= 10 V, VDS = 0.5 VDSS, ID = 40 A  
Qgd  
64  
RthJC  
RthCS  
0.35° C/W  
° C/W  
0.15  
Source-Drain Diode  
Characteristic Values  
(TJ = 25°C unless otherwise specified  
Symbol  
IS  
Test Conditions  
Min.  
Typ.  
Max.  
VGS = 0 V  
80  
A
A
V
ISM  
Repetitive  
200  
1.5  
VSD  
IF = IS, VGS = 0 V,  
trr  
IF = 25 A, -di/dt = 100 A/µs  
200 ns  
QRM  
IRM  
VR = 100 V, VGS = 0 V  
0.6  
6
µC  
A
Notes:  
1. Pulse test, t ≤300 µs, duty cycle d≤ 2 %  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844  
one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405B2 6,759,692  
6,710,463 6,771,478 B2  
IXFR 80N50P  
Fig. 1. Output Characteristics  
Fig. 2. Extended Output Characteristics  
@ 25 C  
@ 25 C  
°
°
180  
160  
140  
120  
100  
80  
80  
70  
60  
50  
40  
30  
20  
10  
0
V
= 10V  
8V  
V
10V  
8V  
GS  
GS =  
7V  
7V  
6V  
5V  
60  
6V  
5V  
40  
20  
0
0
1
2
3
4
5
6
0
3
6
9
12  
15  
18  
21  
24  
27  
VD S - Volts  
VD S - Volts  
Fig. 3. Output Characteristics  
Fig. 4. RDS(on) Norm alize d to ID = 40 A  
Value vs. Junction Tem perature  
@ 125 C  
°
80  
70  
60  
50  
40  
30  
20  
10  
0
3.4  
3.1  
2.8  
2.5  
2.2  
1.9  
1.6  
1.3  
1
V
= 10V  
7V  
GS  
V
= 10V  
GS  
6V  
5V  
I
= 80A  
D
I
= 40A  
D
0.7  
0.4  
0
2
4
6
8
10  
12  
14  
-50  
-25  
0
25  
50  
75  
100 125 150  
VD S - Volts  
TJ - Degrees Centigrade  
Fig. 6. Drain Current vs. Case  
Tem perature  
Fig. 5. RDS(on) Norm alized to  
ID = 40 A Value vs. ID  
3.2  
3
45  
40  
35  
30  
25  
20  
15  
10  
5
V
= 10V  
GS  
2.8  
2.6  
2.4  
2.2  
2
T = 125 C  
°
J
1.8  
1.6  
1.4  
1.2  
1
T = 25 C  
°
J
0.8  
0
0
20  
40  
60  
80  
100 120 140 160 180  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
I D - Amperes  
TC - Degrees Centigrade  
© 2006 IXYS All rights reserved  
IXFR 80N50P  
Fig. 8. Transconductance  
Fig. 7. Input Adm ittance  
140  
120  
100  
80  
140  
120  
100  
80  
T = -40 C  
°
J
25 C  
°
125 C  
°
T
J
= 125 C  
°
25 C  
°
60  
60  
-40 C  
°
40  
40  
20  
20  
0
0
0
20  
40  
60  
80  
100  
120  
140  
4
4.5  
5
5.5  
6
6.5  
7
7.5  
VG S - Volts  
I D - Amperes  
Fig. 9. Source Current vs.  
Source-To-Drain Voltage  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
250  
200  
150  
100  
50  
V
= 250V  
DS  
I
I
= 40A  
D
G
= 10mA  
T = 125 C  
°
J
T = 25 C  
°
J
0
0.4  
0.6  
0.8  
1
1.2  
1.4  
1.6  
0
20 40 60 80 100 120 140 160 180 200  
VS D - Volts  
Q G - NanoCoulombs  
Fig. 12. Forw ard-Bias  
Safe Operating Area  
Fig. 11. Capacitance  
1000  
100  
10  
100000  
10000  
1000  
100  
T
T
= 150  
= 25  
C
°
°
J
f = 1MHz  
C
C
R
Limit  
DS(on)  
C
iss  
25µs  
100µs  
1ms  
C
C
oss  
10ms  
rss  
35  
DC  
1
10  
10  
100  
1000  
0
5
10  
15  
20  
25  
30  
40  
VD S - Volts  
VD S - Volts  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXFR 80N50P  
Fig. 13. Maximum Transient Thermal Resistance  
1.00  
0.10  
0.01  
0.00  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2006 IXYS All rights reserved  
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