HiPerFETTM Power MOSFETs
ISOPLUS247TM, Q-Class
(Electrically Isolated Back Surface)
IXFR 80N20Q VDSS = 200 V
ID25 = 71 A
RDS(on) = 28mW
N-Channel Enhancement Mode
Avalanche Rated
trr £ 200 ns
Low Qg, High dv/dt
Preliminary data
Symbol
TestConditions
MaximumRatings
ISOPLUS 247TM
E153432
VDSS
VDGR
TJ = 25°C to 150°C
200
200
V
V
TJ = 25°C to 150°C; RGS = 1 MW
VGS
Continuous
Transient
±20
±30
V
V
VGSM
G
D
ID25
IDM
IAR
TC = 25°C
71
320
80
A
A
A
TC = 25°C, pulse width limited by TJM
TC = 25°C
G = Gate
D = Drain
TAB = Drain
S = Source
EAR
TC = 25°C
45
1.5
5
mJ
J
EAS
dv/dt
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS
TJ £ 150°C, RG = 2 W
,
V/ns
Features
PD
TC = 25°C
310
W
TJ
-55 ... +150
150
°C
°C
°C
• SiliconchiponDirect-Copper-Bond
substrate
- High power dissipation
TJM
Tstg
-55 ... +150
- Isolated mounting surface
- 2500V electricalisolation
• Low drain to tab capacitance(<30pF)
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
TL
1.6 mm (0.063 in) from case for 10 s
Mountingtorque
300
°C
Md
1.13/10 Nm/lb.in.
Weight
5
g
• Fast intrinsic Rectifier
Symbol
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
Applications
min.
typ.
max.
• DC-DC converters
• Battery chargers
• Switched-modeandresonant-mode
powersupplies
VDSS
VGS = 0 V, ID = 250 uA
VDS = VGS, ID = 4 mA
200
V
V
VGS(th)
2.0
4.0
• DC choppers
• AC motor control
IGSS
VGS = ±20 VDC, VDS = 0
±100
nA
Advantages
IDSS
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
25
1
mA
mA
• Easy assembly
• Space savings
• High power density
RDS(on)
VGS = 10 V, ID = IT
Note 1
28 mW
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
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