IXFR 58N20Q
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
ISOPLUS247OUTLINE
VDS = 10 V; ID = 29A
Note 2
24
34
S
Ciss
Coss
Crss
3600
870
pF
pF
pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
280
td(on)
tr
td(off)
tf
20
40
40
13
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 VDSS, ID = 29A
RG = 1.5 Ω (External),
Qg(on)
Qgs
98 140
nC
nC
nC
VGS = 10 V, VDS = 0.5 VDSS, ID = 29A
25
45
35
70
Qgd
RthJC
RthCK
0.5 K/W
K/W
(TO-247)
0.15
Source-DrainDiode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
TestConditions
IS
VGS = 0 V
58
A
A
ISM
Repetitive, Note 1
232
VSD
IF = Is, VGS = 0 V, Note 2
1.5
V
trr
200 ns
QRM
IRM
0.7
7
µC
IF = Is, -di/dt = 100 A/µs, VR = 100 V
A
Note: 1. Pulse width limited by TJM
2. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETSandIGBTsarecoveredbyoneormoreofthefollowingU.S.patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025
