HiPerFETTM Power MOSFETs
VDSS
ID25
RDS(on)
ISOPLUS247TM
IXFR 50N50 500 V 43 A 100 mΩ
IXFR 55N50 500 V 48 A
90 mΩ
(Electrically Isolated Back Surface)
t ≤ 250 ns
rr
Single Die MOSFET
ISOPLUS247TM
Symbol
TestConditions
Maximum Ratings
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
500
500
V
V
G
D
VGS
VGSM
Continuous
Transient
±20
±30
V
V
Isolated back surface*
D = Drain
ID25
IDM
IAR
TC = 25°C
50N50
55N50
50N50
55N50
50N50
55N50
43
48
200
220
50
A
A
A
A
A
A
G = Gate
S = Source
TC = 25°C, Pulse width limited by TJM
TC = 25°C
* Patent pending
55
EAR
TC = 25°C
TC = 25°C
60
3
mJ
J
Features
EAS
l
Silicon chip on Direct-Copper-Bond
substrate
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 2 Ω
5
V/ns
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Low drain to tab capacitance(<50pF)
Low RDS (on) HDMOSTM process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
PD
TC = 25°C
400
W
l
l
l
l
TJ
TJM
Tstg
-40 ... +150
150
-40 ... +150
°C
°C
°C
TL
1.6 mm (0.063 in.) from case for 10 s
300
2500
5
°C
V~
g
l
VISOL
Weight
50/60 Hz, RMS
t = 1 min
Fast intrinsic Rectifier
Applications
l
DC-DC converters
l
Symbol
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Battery chargers
l
Switched-mode and resonant-mode
power supplies
l
VDSS
VGS = 0 V, ID = 1mA
VDS = VGS, ID = 8mA
500
2.5
V
DC choppers
l
AC motor control
VGS(th)
IGSS
4.5 V
Advantages
VGS = ±20 V, VDS = 0
±200 nA
l
Easy assembly
IDSS
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
25 µA
2 mA
l
Space savings
l
High power density
RDS(on)
VGS = 10 V, ID = IT
Note 1
50N50
55N50
100 mΩ
90 mΩ
98588B (04/02)
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