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IXFR38N80Q2_08

型号：

IXFR38N80Q2_08

描述：

HiPerFET功率MOSFET Q2级[ HiPerFET Power MOSFET Q2-Class ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

4 页

PDF大小：

106 K

下载PDF手册
HiPerFETTM  
Power MOSFET  
Q2-Class  
IXFR38N80Q2  
VDSS = 800V  
ID25 = 28A  
RDS(on) ≤ 240mΩ  
≤ 250ns  
trr  
(Electrically Isolated Back Surface)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
ISOPLUS247 (IXFR)  
E153432  
TJ = 25°C to 150°C  
800  
800  
V
V
VDGR  
TJ = 25°C to 150°C, RGS = 1MΩ  
VGSS  
VGSM  
Continuous  
Transient  
± 30  
± 40  
V
V
ID25  
IDM  
TC = 25°C  
28  
A
A
TC = 25°C, pulse width limited by TJM  
150  
Isolated Tab  
IA  
TC = 25°C  
TC = 25°C  
38  
4
A
J
EAS  
G = Gate  
S = Source  
D = Drain  
dV/dt  
PD  
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C  
TC = 25°C  
20  
V/ns  
W
500  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
Features  
TJM  
Tstg  
• Double metal process for low gate  
resistance  
-55 ... +150  
• Silicon chip on DCB substrate  
- High power dissipation  
- Isolated mounting surface  
- 2500V electrical isolation  
• EpoxymeetUL94V-0, flammability  
classification  
TL  
Maximum lead temperature for soldering  
Plastic body for 10s  
300  
260  
°C  
°C  
V~  
TSOLD  
VISOL  
FC  
50/60 Hz, RMS, 1 minute  
Mounting force  
2500  
20..120/4.5..27  
5
N/lb.  
• Avalanche energy and current rated  
• Fast intrinsic Rectifier  
Weight  
g
Advantages  
• Easy assembly  
• Space savings  
• High power density  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ. Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 3mA  
VDS = VGS, ID = 8mA  
VGS = ± 30V, VDS = 0V  
800  
3.0  
V
V
5.5  
± 200 nA  
25 μA  
IDSS  
VDS = VDSS  
VGS = 0V  
TJ = 125°C  
2
mA  
RDS(on)  
VGS = 10V, ID = 19A, Note 1  
240 mΩ  
DS99203A(05/08)  
© 2008 IXYS CORPORATION, All rights reserved  
IXFR38N80Q2  
Symbol  
Test Conditions  
Characteristic Values  
ISOPLUS247 (IXFR) Outline  
(TJ = 25°C unless otherwise specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 10V, ID = 19A, Note 1  
25  
37  
S
Ciss  
Coss  
Crss  
9500  
888  
pF  
pF  
pF  
VGS = 0V, VDS = 25V, f = 1MHz  
185  
td(on)  
tr  
td(off)  
tf  
Resistive Switching Times  
VGS = 10V, VDS = 0.5 • VDSS, ID = 19A  
RG = 1Ω (External)  
20  
16  
60  
12  
ns  
ns  
ns  
ns  
Qg(on)  
Qgs  
190  
44  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 19A  
Qgd  
88  
RthJC  
RthCS  
0.25 °C/W  
°C/W  
0.15  
Source-Drain Diode  
Characteristic Values  
TJ = 25°C unless otherwise specified)  
Min.  
Typ.  
Max.  
IS  
VGS = 0V  
38  
A
A
V
ISM  
VSD  
Repetitive, pulse width limited by TJM  
IF = IS, VGS = 0V, Note 1  
150  
1.5  
trr  
250 ns  
IF = 25A, -di/dt = 100A/μs  
QRM  
IRM  
1
μC  
VR = 100V, VGS = 0V  
10  
A
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXFR38N80Q2  
Fig. 1. Output Characteristics  
@ 25 C  
º
Fig. 2. Extended Output Characteristics  
@ 25 C  
º
40  
35  
30  
25  
20  
15  
10  
5
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
VGS = 10V  
VGS = 10V  
7V  
6V  
6V  
5.5V  
5.5V  
5V  
7
5V  
0
0
0
0
1
2
3
4
5
6
8
9
10  
0
3
6
9
12 15 18 21 24 27 30  
VD S - Volts  
VD S - Volts  
Fig. 3. Output Characteristics  
@ 125 C  
Fig. 4. RDS(on) Normalized to 0.5 ID25 Value  
vs. Junction Temperature  
º
40  
35  
30  
25  
20  
15  
10  
5
3.2  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
VGS = 10V  
6V  
VGS = 10V  
5.5V  
5V  
ID = 38A  
ID = 19A  
0
2
4
6
8 10 12 14 16 18 20  
VD S - Volts  
-50 -25  
0
25  
TJ - Degrees Centigrade  
50  
75  
100 125 150  
Fig. 5. RDS(on) Normalized to 0.5 ID25 Value  
vs. ID  
Fig. 6. Drain Current vs. Case  
Temperature  
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
30  
27  
24  
21  
18  
15  
12  
9
VGS = 10V  
TJ = 125ºC  
6
TJ = 25ºC  
3
0
10 20  
30 40 50 60  
I D - Amperes  
70 80 90  
-50 -25  
0
25  
50  
TC - Degrees Centigrade  
75  
100 125 150  
© 2008 IXYS CORPORATION, All rights reserved  
IXFR38N80Q2  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
80  
70  
60  
50  
40  
30  
20  
10  
0
TJ = - 40ºC  
TJ = 125ºC  
25ºC  
- 40ºC  
25ºC  
125ºC  
0
0
10  
20  
30  
40  
50  
60  
70  
3.5  
4.0  
4.5 5.0  
VG S - Volts  
5.5  
6.0  
6.5  
I D - Amperes  
Fig. 9. Source Current vs.Source-To-Drain  
Voltage  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
120  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
VDS = 400V  
ID = 19A  
IG = 10mA  
TJ = 125ºC  
TJ = 25ºC  
0
20 40 60 80 100 120 140 160 180 200  
QG - nanoCoulombs  
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3  
VS D - Volts  
Fig. 12. Maximum Transient Thermal  
Impedance  
Fig. 11. Capacitance  
1.000  
0.100  
0.010  
0.001  
100,000  
10,000  
1,000  
100  
f = 1MHz  
C
iss  
C
C
oss  
rss  
0
5
10  
15  
20  
VD S - Volts  
25  
30  
35  
40  
0.0001  
0.001  
0.01  
0.1  
Pulse Width - Seconds  
1
10  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS REF: F_38N80Q2(94)5-28-08-A  
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