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IXFR32N100P

型号：

IXFR32N100P

描述：

Polar功率MOSFET HiperFET[ Polar Power MOSFET HiPerFET ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

4 页

PDF大小：

107 K

下载PDF手册
PolarTM Power MOSFET  
HiPerFETTM  
VDSS = 1000V  
ID25 = 18A  
RDS(on) ≤ 340mΩ  
≤ 300ns  
IXFR32N100P  
trr  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Diode  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
ISOPLUS247 (IXFR)  
E153432  
TJ = 25°C to 150°C  
1000  
1000  
V
V
VDGR  
TJ = 25°C to 150°C, RGS = 1MΩ  
VGSS  
VGSM  
Continuous  
Transient  
± 30  
± 40  
V
V
ID25  
IDM  
TC = 25°C  
18  
75  
A
A
Isolated Tab  
TC = 25°C, pulse width limited by TJM  
IAR  
TC = 25°C  
TC = 25°C  
16  
A
J
EAS  
1.5  
G = Gate  
D = Drain  
S = Source  
dV/dt  
PD  
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C  
TC = 25°C  
15  
V/ns  
W
320  
Features  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
• Silicon chip on Direct-Copper-Bond  
substrate  
- High power dissipation  
- Isolated mounting surface  
- 2500V electrical isolation  
-55 ... +150  
TL  
Maximum lead temperature for soldering  
Plastic body for 10s  
300  
260  
°C  
°C  
V~  
• Low drain to tab capacitance(<30pF)  
TSOLD  
VISOL  
FC  
• Low R  
HDMOSTM process  
• RuggeDdS p(ono)lysilicon gate cell structure  
• Unclamped Inductive Switching (UIS)  
50/60 Hz, RMS, 1 minute  
Mounting force  
2500  
20..120/4.5..27  
5
N/lb.  
• Fraatsetdintrinsic Rectifier  
Weight  
g
Applications  
• Switched-mode and resonant-mode  
power supplies  
• DC-DC converters  
Symbol  
Test Conditions  
Characteristic Values  
• Laser Drivers  
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ. Max.  
• AC and DC motor controls  
• Robotics and servo controls  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 3mA  
VDS = VGS, ID = 1mA  
VGS = ± 30V, VDS = 0V  
1000  
3.5  
V
V
Advantages  
6.5  
• Easy assembly  
• Space savings  
• High power density  
± 200 nA  
IDSS  
VDS = VDSS  
VGS = 0V  
50 μA  
2.5 mA  
TJ = 125°C  
RDS(on)  
VGS = 10V, ID = 16A, Note 1  
340 mΩ  
DS99881A(4/08)  
© 2008 IXYS CORPORATION, All rights reserved  
IXFR32N100P  
Symbol  
Test Conditions  
Characteristic Values  
ISOPLUS247 (IXFR) Outline  
(TJ = 25°C unless otherwise specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 20V, ID = 16A, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
Gate input resistance  
13  
21  
S
Ciss  
Coss  
Crss  
14.2  
815  
60  
nF  
pF  
pF  
RGi  
1.50  
Ω
td(on)  
tr  
td(off)  
tf  
Resistive Switching Times  
VGS = 10V, VDS = 0.5 • VDSS, ID = 16A  
RG = 1Ω (External)  
50  
55  
76  
43  
ns  
ns  
ns  
ns  
Qg(on)  
Qgs  
225  
85  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 16A  
Qgd  
94  
RthJC  
RthCS  
0.39 °C/W  
°C/W  
0.15  
Source-Drain Diode  
Characteristic Values  
TJ = 25°C unless otherwise specified)  
Min.  
Typ.  
Max.  
IS  
VGS = 0V  
32  
A
A
V
ISM  
VSD  
Repetitive, pulse width limited by TJM  
IF = IS, VGS = 0V, Note 1  
128  
1.5  
trr  
300 ns  
IF = 16A, -di/dt = 100A/μs  
QRM  
IRM  
2.2  
μC  
VR = 100V, VGS = 0V  
15  
A
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,727,585  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,534,343  
6,583,505  
6,710,405 B2 6,759,692  
6,710,463  
6,771,478 B2 7,071,537  
IXFR32N100P  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
70  
60  
50  
40  
30  
20  
10  
0
32  
28  
24  
20  
16  
12  
8
VGS = 15V  
10V  
VGS = 15V  
10V  
9V  
8V  
9V  
8V  
7V  
7V  
4
0
0
0
0
1
2
3
4
5
6
7
8
9
10  
0
5
10  
15  
20  
25  
30  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 16A Value  
vs. Junction Temperature  
Fig. 3. Output Characteristics  
@ 125ºC  
32  
28  
24  
20  
16  
12  
8
3.0  
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
VGS = 15V  
10V  
9V  
VGS = 10V  
8V  
I D = 32A  
I D = 16A  
7V  
6V  
4
0
2
4
6
8
10  
12  
14  
16  
18  
20  
22  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 16A Value  
vs. Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
20  
18  
16  
14  
12  
10  
8
2.6  
2.4  
2.2  
2
TJ = 125ºC  
VGS = 10V  
1.8  
1.6  
1.4  
1.2  
1
15V - - - -  
6
4
2
TJ = 25ºC  
0.8  
0
5
10 15 20 25 30 35 40 45 50 55 60 65  
ID - Amperes  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
TC - Degrees Centigrade  
© 2008 IXYS CORPORATION, All rights reserved  
IXFR32N100P  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
40  
35  
30  
25  
20  
15  
10  
5
40  
35  
30  
25  
20  
15  
10  
5
TJ = 125ºC  
25ºC  
- 40ºC  
TJ = - 40ºC  
25ºC  
125ºC  
0
0
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
8.5  
9.0  
9.5  
0
5
10  
15  
20  
25  
30  
35  
40  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
16  
14  
12  
10  
8
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
VDS = 500V  
I D = 16A  
I G = 10mA  
TJ = 125ºC  
6
TJ = 25ºC  
4
2
0
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
0
50  
100  
150  
200  
250  
300  
VSD - Volts  
QG - NanoCoulombs  
Fig. 12. Maximum Transient Thermal  
Impedance  
Fig. 11. Capacitance  
100,000  
10,000  
1,000  
100  
1.000  
0.100  
0.010  
0.001  
= 1 MHz  
f
C
iss  
C
oss  
C
rss  
10  
0
5
10  
15  
20  
25  
30  
35  
40  
0.0001  
0.001  
0.01  
0.1  
1
10  
VDS - Volts  
IXYS reserves the right to change limits, test conditions, and dimensions.  
Pulse Width - Seconds  
IXYS REF: F_32N100P(96)3-28-08-C  
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