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IXFR200N10P

型号：

IXFR200N10P

描述：

PolarTM HiPerFET功率MOSFET[ PolarTM HiPerFET Power MOSFET ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

561 K

下载PDF手册
Advanced Technical Information  
PolarTM HiPerFET  
Power MOSFET  
Electrically Isolated Tab  
VDSS = 100 V  
ID25 = 133 A  
RDS(on) = 8 mΩ  
IXFR 200N10P  
N-Channel Enhancement Mode  
Fast Recovery Diode, Avavanche Rated  
ISOPLUS247(IXFR)  
Symbol  
TestConditions  
Maximum Ratings  
E153432  
VDSS  
VDGR  
TJ = 25°C to 175°C  
100  
100  
V
TJ = 25°C to 175°C; RGS = 1 MΩ  
V
VGS  
20  
30  
V
V
G
D
S
TAB  
VGSM  
ID25  
TC = 25°C  
133  
75  
A
A
A
G = Gate  
D = Drain  
S = Source  
ID(RMS)  
IDM  
External lead current limit  
TC = 25°C, pulse width limited by TJM  
400  
Features  
IAR  
TC = 25°C  
60  
A
z Silicon chip on Direct-Copper-Bond  
substrate  
EAR  
EAS  
TC = 25°C  
TC = 25°C  
100  
4
mJ  
J
- High power dissipation  
- Isolated mounting surface  
- 2500V electrical isolation  
dv/dt  
PD  
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS  
TJ ≤ 150°C, RG = 4 Ω  
,
10  
V/ns  
z Low drain to tab capacitance(<30pF)  
z Fast recovery intrinsic diode  
TC = 25°C  
350  
W
Applications  
TJ  
TJM  
Tstg  
-55 ... +175  
175  
°C  
°C  
°C  
z
DC-DC converters  
Battery chargers  
Switched-mode and resonant-mode  
power supplies  
z
-55 ... +150  
z
VISOL  
FC  
50/60 Hz, RMS, 1 minute  
Mounting Force  
2500  
20..120/4.6..20  
5
V~  
Nm/lb  
g
z
DC choppers  
z AC motor control  
Weight  
Advantages  
z
Easy assembly  
Space savings  
High power density  
Symbol  
TestConditions  
Characteristic Values  
z
(TJ = 25°C, unless otherwise specified)  
Min. Typ.  
Max.  
z
VDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 µA  
VDS = VGS, ID = 500µA  
VGS = 30 VDC, VDS = 0  
VDS = VDSS  
100  
V
V
3.0  
5.0  
100  
nA  
IDSS  
25  
250  
1000  
µA  
µA  
µA  
VGS = 0 V  
TJ = 150°C  
TJ = 175°C  
VGS = 0 V  
RDS(on)  
VGS = 10 V, ID = 0.5 ID25  
VGS = 15 V, ID = 400A  
8
mΩ  
mΩ  
5.5  
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %  
DS99239(06/05)  
© 2005 IXYS All rights reserved  
IXFR 200N10P  
ISOPLUS247 Outline  
Symbol  
gfs  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ.  
Max.  
VDS= 10 V; ID = 0.5 ID25, pulse test  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
60  
97  
S
Ciss  
Coss  
Crss  
7600  
2900  
860  
pF  
pF  
pF  
td(on)  
tr  
td(off)  
tf  
30  
35  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 VDSS, ID = 60 A  
RG = 3.3 Ω (External)  
150  
90  
Qg(on)  
Qgs  
240  
50  
nC  
nC  
nC  
VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25  
Qgd  
135  
RthJC  
RthCK  
0.42 K/W  
K/W  
0.15  
Source-Drain Diode  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Symbol  
IS  
TestConditions  
Min.  
typ.  
Max.  
VGS = 0 V  
200  
A
A
V
ISM  
Repetitive  
400  
1.5  
VSD  
IF = IS, VGS = 0 V,  
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %  
trr  
IF = 25 A, dI/dt = 100 A/µs  
100  
0.4  
6
140 ns  
QRM  
IRM  
VR = 100 V  
µC  
A
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered by  
oneormoreofthefollowingU.S.patents:  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2  
6,710,463  
6,727,585  
6,259,123B1  
6,306,728 B1  
IXFR 200N10P  
Fig. 1. Output Characteristics  
@ 25  
Fig. 2. Extended Output Characteristics  
º
C
@ 25 C  
º
350  
300  
250  
200  
150  
100  
50  
200  
175  
150  
125  
100  
75  
VGS = 10V  
9V  
V
GS  
= 10V  
9V  
8V  
8V  
7V  
7V  
6V  
50  
25  
6V  
0
0
0
0
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
1.6  
3.5  
350  
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
5
VD S - Volts  
VD S - Volts  
Fig. 3. Output Characteristics  
Fig. 4. RDS(on Normalized to 0.5 ID25  
Value vs. Junction Temperature  
)
@ 150ºC  
200  
175  
150  
125  
100  
75  
2.4  
2.2  
2
VGS = 10V  
9V  
VGS = 10V  
8V  
1.8  
1.6  
1.4  
1.2  
1
ID = 200A  
7V  
6V  
ID = 100A  
50  
25  
0.8  
0.6  
5V  
0
0.5  
1
1.5  
2
2.5  
3
-50 -25  
0
25  
50  
75 100 125 150 175  
VD S - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to 0.5 ID25  
Value vs. Drain Current  
Fig. 6. Drain Current vs. Case  
Temperature  
80  
70  
60  
50  
40  
30  
20  
10  
0
2.4  
2.2  
2
º
TJ = 175 C  
1.8  
1.6  
1.4  
1.2  
1
VGS = 10V  
V
= 15V  
GS  
0.8  
0.6  
º
TJ = 25 C  
-50 -25  
0
25  
50  
75 100 125 150 175  
50  
100  
150  
200  
250 300  
I D - Amperes  
TC - Degrees Centigrade  
© 2005 IXYS All rights reserved  
IXFR 200N10P  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
300  
250  
200  
150  
100  
50  
140  
120  
100  
80  
º
TJ = -40 C  
25ºC  
150ºC  
60  
º
TJ = -40 C  
40  
25ºC  
150ºC  
20  
0
0
4
4.5  
5
5.5  
6
6.5  
7
7.5  
8
8.5  
9
0
50  
100  
150  
200  
250  
300  
350  
VG S - Volts  
I D - Amperes  
Fig. 9. Source Current vs.  
Source-To-Drain Voltage  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
350  
300  
250  
200  
150  
100  
50  
VDS = 50V  
D = 100A  
G = 10mA  
I
I
º
TJ = 150 C  
º
TJ = 25 C  
0
0.4  
0.6  
0.8  
1
1.2  
1.4  
1.6  
0
25 50 75 100 125 150 175 200 225 250  
VS D - Volts  
Q G - nanoCoulombs  
Safe Ope rating Are a  
Fig. 12. Forw ard-Bias  
Fig. 11. Capacitance  
100,000  
10,000  
1,000  
100  
1000  
= 175ºC  
f = 1MHz  
TJ  
R DS(on) Lim it  
TC = 25ºC  
C
C
iss  
100µs  
oss  
100  
1m s  
C
rss  
10m s  
D C  
10  
0
5
10  
15  
20  
25  
30  
35  
40  
1
10  
100  
1000  
VDS - Volts  
V D S - V olts  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXFR 200N10P  
Fig. 13. Maximum Transient Thermal Resistance  
1.00  
0.10  
0.01  
0.00  
0.1  
1
10  
100  
1000  
Pulse Width - milliseconds  
© 2005 IXYS All rights reserved  
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