IXFR14N100Q2
Symbol
Test Conditions
Characteristic Values
ISOPLUS247 (IXFR) Outline
(TJ = 25°C Unless Otherwise Specified)
Min.
Typ.
Max.
gfs
VDS = 10V, ID = 7A, Note 1
10
14
S
Ciss
Coss
Crss
2800
287
pF
pF
pF
VGS = 0V, VDS = 25V, f = 1MHz
100
td(on)
tr
td(off)
tf
12
10
28
12
ns
ns
ns
ns
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 7A
RG = 2Ω (External)
Qg(on)
Qgs
83
20
40
nC
nC
nC
VGS = 10V, VDS = 0.5 • VDSS, ID = 7A
Qgd
RthJC
RthCS
0.62 °C/W
°C/W
0.15
Source-Drain Diode
Characteristic Values
TJ = 25°C Unless Otherwise Specified)
Min.
Typ.
Max.
IS
VGS = 0V
14
A
A
V
ISM
VSD
Repetitive, Pulse Width Limited by TJM
IF = IS, VGS = 0V, Note 1
56
1.5
trr
300 ns
IF = 14A, -di/dt = 100A/μs
QRM
IRM
0.8
μC
VR = 100V, VGS = 0V
7
A
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,727,585
7,005,734 B2 7,157,338B2
7,063,975 B2
6,534,343
6,583,505
6,710,405 B2 6,759,692
6,710,463
6,771,478 B2 7,071,537
