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IXFP76N15T2

型号：

IXFP76N15T2

描述：

TrenchT2 HiperFET功率MOSFET[ TrenchT2 HiperFET Power MOSFET ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

179 K

下载PDF手册
Advance Technical Information  
TrenchT2TM HiperFETTM  
Power MOSFET  
VDSS = 150V  
ID25 = 76A  
RDS(on) ≤ 20mΩ  
IXFA76N15T2  
IXFP76N15T2  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-263 AA (IXFA)  
Fast Intrnsic Rectifier  
G
S
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
D (TAB)  
TJ = 25°C to 175°C  
TJ = 25°C to 175°C, RGS = 1MΩ  
150  
150  
V
V
TO-220AB (IXFP)  
VDGR  
VGSS  
VGSM  
Continuous  
Transient  
± 20  
± 30  
V
V
ID25  
IDM  
TC = 25°C  
76  
A
A
G
TC = 25°C, Pulse Width Limited by TJM  
200  
D
D (TAB)  
= Drain  
S
IA  
TC = 25°C  
TC = 25°C  
38  
A
EAS  
500  
mJ  
G = Gate  
D
S = Source  
TAB = Drain  
dV/dt  
PD  
IS ≤ IDM,, VDD ≤ VDSS,TJ ≤ 175°C  
TC = 25°C  
15  
V/ns  
W
350  
Features  
TJ  
-55 ... +175  
175  
°C  
°C  
°C  
TJM  
Tstg  
z International Standard Packages  
z 175°C Operating Temperature  
z High Current Handling Capability  
z Fast Intrinsic Rectifier  
-55 ... +175  
TL  
Tsold  
1.6mm (0.062in.) from Case for 10s  
Plastic Body for 10 seconds  
300  
260  
°C  
°C  
z Dynamic dV/dt Rated  
Md  
Mounting Torque (TO-220)  
1.13 / 10  
Nm/lb.in.  
z
Low RDS(on)  
Weight  
TO-263  
TO-220  
2.5  
3.0  
g
g
Advantages  
z
Easy to Mount  
Space Savings  
High Power Density  
z
Symbol  
Test Conditions  
Characteristic Values  
z
(TJ = 25°C Unless Otherwise Specified)  
Min. Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 250μA  
VGS = ± 20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
150  
2.5  
V
V
Applications  
4.5  
z DC-DC Converters  
z Battery Chargers  
±200 nA  
μA  
z Switched-Mode and Resonant-Mode  
Power Supplies  
IDSS  
5
TJ = 150°C  
VGS = 10V, ID = 0.5 • ID25, Notes 1, 2  
750 μA  
20 mΩ  
z DC Choppers  
z AC Motor Drives  
RDS(on)  
z Uninterruptible Power Supplies  
z High Speed Power Switching  
Applications  
DS100176(08/09)  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXFA76N15T2  
IXFP76N15T2  
Symbol  
Test Conditions  
Characteristic Values  
Min. Typ. Max.  
TO-263 (IXFA) Outline  
(TJ = 25°C, Unless Otherwise Specified)  
gfs  
VDS = 10V, ID = 0.5 • ID25, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
50  
80  
S
Ciss  
Coss  
Crss  
5800  
490  
85  
pF  
pF  
pF  
td(on)  
tr  
td(off)  
tf  
17  
19  
25  
14  
ns  
ns  
ns  
ns  
1. Gate  
Resistive Switching Times  
2. Collector  
3. Emitter  
4. Collector  
Bottom  
V
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 5Ω (External)  
Side  
Qg(on)  
Qgs  
97  
29  
30  
nC  
nC  
nC  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min.  
Max.  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
A
b
b2  
4.06  
0.51  
1.14  
4.83  
0.99  
1.40  
.160  
.020  
.045  
.190  
.039  
.055  
Qgd  
c
c2  
0.40  
1.14  
0.74  
1.40  
.016  
.045  
.029  
.055  
RthJC  
RthCH  
0.43 °C/W  
°C/W  
TO-220  
0.50  
D
D1  
8.64  
8.00  
9.65  
8.89  
.340  
.280  
.380  
.320  
E
9.65  
10.41  
.380  
.405  
E1  
e
L
L1  
L2  
L3  
L4  
6.22  
2.54  
14.61  
2.29  
1.02  
1.27  
0
8.13  
BSC  
15.88  
2.79  
1.40  
1.78  
0.13  
.270  
.100 BSC  
.320  
Source-Drain Diode  
.575  
.090  
.040  
.050  
0
.625  
.110  
.055  
.070  
.005  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min. Typ.  
Max.  
IS  
VGS = 0V  
76  
A
A
V
ISM  
VSD  
Repetitive, Pulse width limited by TJM  
IF = 38A, VGS = 0V, Note 1  
300  
1.5  
TO-220 (IXFP) Outline  
trr  
69  
5.7  
ns  
A
IF = 38A, VGS = 0V  
IRM  
QRM  
-di/dt = 100A/μs  
VR = 75V  
197  
nC  
Notes: 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.  
2. On through-hole packages, RDS(on) Kelvin test contact  
location must be 5mm or less from the package body.  
Pins: 1 - Gate  
3 - Source  
2 - Drain  
4 - Drain  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a  
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test  
conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXFA76N15T2  
IXFP76N15T2  
Fig. 2. Extended Output Characteristics  
Fig. 1. Output Characteristics  
@ 25ºC  
@ 25ºC  
240  
200  
160  
120  
80  
80  
70  
60  
50  
40  
30  
20  
10  
0
VGS = 15V  
10V  
VGS = 15V  
10V  
8V  
7V  
6V  
7V  
6V  
5V  
40  
5V  
0
0
2
4
6
8
10  
12  
14  
16  
18  
20  
22  
24  
0.0  
0.0  
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
4.5  
220  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 38A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics  
@ 150ºC  
80  
70  
60  
50  
40  
30  
20  
10  
0
3.4  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
VGS = 15V  
VGS = 10V  
10V  
7V  
I D = 76A  
6V  
5V  
I D = 38A  
4V  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 38A Value vs.  
Drain Current  
Fig. 6. Drain Current vs. Case Temperature  
80  
70  
60  
50  
40  
30  
20  
10  
0
4.6  
4.2  
3.8  
3.4  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
VGS = 10V  
TJ = 175ºC  
TJ = 25ºC  
20  
40  
60  
80  
100  
120  
140  
160  
180  
200  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
ID - Amperes  
TC - Degrees Centigrade  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXFA76N15T2  
IXFP76N15T2  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
140  
120  
100  
80  
140  
120  
100  
80  
TJ = - 40ºC  
TJ = 150ºC  
25ºC  
25ºC  
- 40ºC  
150ºC  
60  
60  
40  
40  
20  
20  
0
0
0
0
1
20  
40  
60  
80  
ID - Amperes  
100  
120  
140  
160  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
2.0  
40  
VGS - Volts  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
240  
200  
160  
120  
80  
VDS = 75V  
I D = 38A  
I
G = 10mA  
TJ = 150ºC  
TJ = 25ºC  
40  
0
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
10  
20  
30  
40  
50  
60  
70  
80  
90  
100  
QG - NanoCoulombs  
VSD - Volts  
Fig. 11. Capacitance  
Fig. 12. Forward-Bias Safe Operating Area  
10,000  
1,000  
100  
1,000.0  
100.0  
10.0  
1.0  
RDS(on) Limit  
C
iss  
25µs  
100µs  
C
C
oss  
1ms  
10ms  
TJ = 175ºC  
rss  
TC = 25ºC  
DC  
= 1 MHz  
5
f
Single Pulse  
0.1  
10  
10  
100  
1000  
0
10  
15  
20  
25  
30  
35  
VDS - Volts  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: F_76N15T2(4V)7-02-09  
IXFA76N15T2  
IXFP76N15T2  
Fig. 13. Resistive Turn-on  
Fig. 14. Resistive Turn-on  
Rise Time vs. Junction Temperature  
Rise Time vs. Drain Current  
22  
21  
20  
19  
18  
17  
16  
22  
21  
20  
19  
18  
17  
RG = 5ꢀ  
RG = 5Ω  
VGS = 10V  
VDS = 75V  
VGS = 10V  
VDS = 75V  
TJ = 125ºC  
TJ = 25ºC  
I D = 152A  
I D = 76A  
30  
40  
50  
60  
70  
80  
90  
100 110 120 130 140 150 160  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
TJ - Degrees Centigrade  
ID - Amperes  
Fig. 16. Resistive Turn-off  
Switching Times vs. Junction Temperature  
Fig. 15. Resistive Turn-on  
Switching Times vs. Gate Resistance  
22  
20  
19  
18  
17  
16  
15  
14  
16.0  
15.5  
15.0  
14.5  
14.0  
13.5  
13.0  
30  
28  
26  
24  
22  
20  
18  
t r  
t
d(on) - - - -  
tf  
t
d(off) - - - -  
RG = 5Ω, VGS = 10V  
DS = 75V  
TJ = 125ºC, VGS = 10V  
VDS = 75V  
21  
20  
19  
18  
17  
16  
V
I D = 76A, 152A  
I D = 76A, 152A  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
4
6
8
10  
12  
14  
16  
18  
20  
TJ - Degrees Centigrade  
RG - Ohms  
Fig. 17. Resistive Turn-off  
Switching Times vs. Drain Current  
Fig. 18. Resistive Turn-off  
Switching Times vs. Gate Resistance  
18  
17  
16  
15  
14  
13  
12  
11  
34  
32  
30  
28  
26  
24  
22  
20  
17  
16  
15  
14  
13  
12  
11  
10  
30  
t f  
t
d(off) - - - -  
RG = 5ꢀ, VGS = 10V  
DS = 75V  
tf  
t
d(off) - - - -  
29  
28  
27  
26  
25  
24  
23  
TJ = 125ºC, VGS = 10V  
V
VDS = 75V  
TJ = 125ºC  
I D = 152A  
I D = 76A  
TJ = 25ºC  
30  
40  
50  
60  
70  
80  
90 100 110 120 130 140 150 160  
ID - Amperes  
4
6
8
10  
12  
14  
16  
18  
20  
RG - Ohms  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXFA76N15T2  
IXFP76N15T2  
Fig. 19. Maximum Transient Thermal Impedance  
1.000  
0.100  
0.010  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Second  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: F_76N15T2(4V)7-02-09  
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