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IXFP10N80P

型号：

IXFP10N80P

描述：

PolarHV HiPerFET功率MOSFET[ PolarHV HiPerFET Power MOSFET ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

148 K

下载PDF手册
PolarHVTM HiPerFET  
Power MOSFET  
IXFA10N80P  
IXFP10N80P  
IXFQ10N80P  
IXFH10N80P  
VDSS = 800V  
ID25 = 10A  
RDS(on) ≤ 1.1Ω  
N-Channel Enhancement Mode  
Avalanche Rated  
trr  
≤ 250ns  
Fast Intrinsic Diode  
TO-220AB (IXFP)  
TO-3P (IXFQ)  
TO-263 AA (IXFA)  
G
S
G
D
G
S
D
D (TAB)  
D (TAB)  
S
D (TAB)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TO-247 (IXFH)  
TJ = 25°C to 150°C  
800  
800  
V
V
VDGR  
TJ = 25°C to 150°C, RGS = 1MΩ  
VGSS  
VGSM  
Continuous  
Transient  
±30  
±40  
V
V
G
D
S
ID25  
IDM  
TC = 25°C  
TC = 25°C, Pulse Width Limited by TJM  
10  
30  
A
A
D (TAB)  
IA  
TC = 25°C  
TC = 25°C  
5
A
G = Gate  
S = Source  
D
= Drain  
TAB = Drain  
EAS  
600  
mJ  
dV/dt  
PD  
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C  
TC = 25°C  
10  
V/ns  
W
300  
Features  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
z International Standard Packages  
z Avalanche Rated  
z Low Package Inductance  
z Easy to Drive and to Protect  
TJM  
Tstg  
-55 ... +150  
TL  
1.6mm (0.062) from Case for 10s  
Plastic Body for 10s  
300  
260  
°C  
°C  
TSOLD  
Advantages  
Md  
Mounting Torque  
(TO-220,TO-247)  
1.13 / 10  
Nm/lb.in.  
z
Weight  
TO-263  
TO-220  
TO-3P  
2.5  
3.0  
5.5  
6.0  
g
g
g
g
Easy to Mount  
Space Savings  
High Power Density  
z
z
TO-247  
Applications  
Symbol  
Test Conditions  
Characteristic Values  
z Switched-Mode and Resonant-Mode  
Power Supplies  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
800  
3.0  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 2.5mA  
VGS = ± 30V, VDS = 0V  
VDS = VDSS, VGS= 0V  
V
V
z DC-DC Converters  
z Laser Drivers  
z AC and DC Motor Drives  
z Robotics and Servo Controls  
5.5  
±100 nA  
IDSS  
25 μA  
TJ = 150°C  
VGS = 10V, ID = 0.5 • ID25, Note 1  
500 μA  
RDS(on)  
1.1  
Ω
DS99432F(08/09)  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXFA10N80P IXFP10N80P  
IXFQ10N80P IXFH10N80P  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
gfs  
VDS= 20V, ID = 0.5 • ID25, Note 1  
7
11  
S
Ciss  
Coss  
Crss  
2050  
pF  
pF  
pF  
VGS = 0V, VDS = 25V, f = 1MHz  
172  
16  
td(on)  
tr  
td(off)  
tf  
21  
22  
62  
22  
ns  
ns  
ns  
ns  
Resistive Switching Times  
V
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 5Ω (External)  
Qg(on)  
Qgs  
40  
12  
14  
nC  
nC  
nC  
VGS= 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
RthJC  
0.42 °C/W  
RthCS  
RthCS  
(TO-220)  
(TO-247 & TO-3P)  
0.50  
0.25  
°C/W  
°C/W  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
IS  
VGS = 0V  
10  
A
A
V
ISM  
VSD  
Repetitive, Pulse WidthLlimited by TJM  
IF = IS, VGS = 0V, Note 1  
30  
1.5  
trr  
200  
3.0  
0.6  
250 ns  
IF = 10A, VGS = 0V  
IRM  
QRM  
A
-di/dt = 100A/μs  
VR = 100V  
μC  
Note 1. Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %  
Fig. 1. Forward-Bias Safe Operating Area  
100.0  
10.0  
1.0  
25µs  
100µs  
T
T
= 150ºC  
J
= 25ºC  
C
Single Pulse  
1m s  
0.1  
10  
100  
1000  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXFA10N80P IXFP10N80P  
IXFQ10N80P IXFH10N80P  
Fig. 3. Extended Output Characteristics  
Fig. 2. Output Characteristics  
@ 25 C  
º
@ 25 C  
º
10  
9
8
7
6
5
4
3
2
1
0
18  
16  
14  
12  
10  
8
V
GS  
= 10V  
V
= 10V  
8V  
GS  
8V  
7V  
7V  
6V  
6V  
6
4
2
5V  
5V  
0
0
0
0
2
4
6
8
10  
12  
14  
0
3
6
9
12 15 18 21 24 27 30  
V
- Volts  
D S  
VD S - Volts  
Fig. 4. Output Characteristics  
Fig. 5. RDS(on) Normalized to 0.5 ID25 Value  
vs. Junction Temperature  
@ 125 C  
º
10  
9
8
7
6
5
4
3
2
1
0
3.2  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
V
GS  
= 10V  
7V  
V
= 10V  
GS  
6V  
I = 10A  
D
I = 5A  
D
5V  
3
6
9
12 15 18 21 24 27 30  
VD S - Volts  
-50 -25  
0
25  
TJ - Degrees Centigrade  
50  
75  
100 125 150  
Fig. 6. RDS(on) Normalized to  
0.5 ID25 Value vs. ID  
Fig. 7. Drain Current vs. Case  
Temperature  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
11  
10  
9
V
= 10V  
GS  
T = 125 C  
º
J
8
7
6
5
4
3
T = 25 C  
º
J
2
1
0
-50 -25  
0
25  
50  
TC - Degrees Centigrade  
75  
100 125 150  
2
4
6
8
I D - Amperes  
10 12 14 16 18 20  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXFA10N80P IXFP10N80P  
IXFQ10N80P IXFH10N80P  
Fig. 9. Transconductance  
Fig. 8. Input Admittance  
10  
9
8
7
6
5
4
3
2
1
0
18  
16  
14  
12  
10  
8
6
T = 125  
J
º
C
T = - 40 C  
º
J
25  
- 40  
º
C
25  
125  
º
º
C
C
4
º
C
2
0
0
1
2
3
4
5
6
7
8
9
10  
3.5  
4.0  
4.5  
5.0  
VG S - Volts  
5.5  
6.0  
6.5  
1.1  
40  
I D - Amperes  
Fig. 10. Source Current vs.  
Source-To-Drain Voltage  
Fig. 11. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
30  
27  
24  
21  
18  
15  
12  
9
V
= 400V  
DS  
I = 5A  
D
I
G
= 10mA  
T = 125 C  
º
J
6
T = 25 C  
º
J
3
0
0.4  
0.5  
0.6  
0.7 0.8  
VS D - Volts  
0.9  
1.0  
0
5
10  
15  
20  
25  
Q G - nanoCoulombs  
30  
35  
40  
Fig. 13. Maximum Transient Thermal  
Impedance  
Fig. 12. Capacitance  
10000  
1000  
100  
1.00  
0.10  
0.01  
f = 1MHz  
C
C
iss  
oss  
C
rss  
10  
0
5
10  
15  
20  
VD S - Volts  
25  
30  
35  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: F_10N80P(5J)8-18-09-A  
IXFA10N80P IXFH10N80P  
IXFP10N80P IXFQ10N80P  
TO-263 (IXFA) Outline  
TO-220 (IXFP) Outline  
TO-3P (IXFQ) Outline  
1. Gate  
2. Collector  
3. Emitter  
4. Collector  
Bottom  
Side  
Dim.  
Millimeter  
Inches  
Min. Max.  
Pins: 1 - Gate  
3 - Source  
2 - Drain  
4 - Drain  
Min.  
Max.  
A
b
b2  
4.06  
0.51  
1.14  
4.83  
0.99  
1.40  
.160  
.020  
.045  
.190  
.039  
.055  
Pins: 1 - Gate  
3 - Source  
2 - Drain  
4 - Drain  
c
c2  
0.40  
1.14  
0.74  
1.40  
.016  
.045  
.029  
.055  
D
D1  
8.64  
8.00  
9.65  
8.89  
.340  
.280  
.380  
.320  
E
9.65  
10.41  
.380  
.405  
E1  
e
L
L1  
L2  
L3  
L4  
6.22  
2.54  
14.61  
2.29  
1.02  
1.27  
0
8.13  
BSC  
15.88  
2.79  
1.40  
1.78  
0.13  
.270  
.100 BSC  
.320  
.575  
.090  
.040  
.050  
0
.625  
.110  
.055  
.070  
.005  
TO-247 (IXFH) Outline  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
∅ P  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
1
2
3
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
e
5.20  
5.72 0.205 0.225  
L
L1  
19.81 20.32  
4.50  
.780 .800  
.177  
e
∅P 3.55  
3.65  
.140 .144  
Q
5.89  
6.40 0.232 0.252  
Pins: 1 - Gate  
3 - Source  
2 - Drain  
4 - Drain  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
© 2009 IXYS CORPORATION, All Rights Reserved  
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