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IXFN80N50Q2

型号：

IXFN80N50Q2

描述：

HiPerFET功率MOSFET Q2级[ HiPerFET Power MOSFET Q2-Class ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

4 页

PDF大小：

112 K

下载PDF手册
Preliminary Technical Information  
HiPerFETTM  
Power MOSFET  
Q2-Class  
N-Channel Enhancement Mode  
Avalanche Rated, Low Qg, Low  
Intrinsic Rg, High dV/dt, Low trr  
IXFN80N50Q2  
VDSS = 500V  
ID25 = 80A  
RDS(on) ≤ 60mΩ  
trr  
≤ 250ns  
miniBLOC, SOT-227 B (IXFN)  
E153432  
Symbol  
Test Conditions  
Maximum Ratings  
VDSS  
VDGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1MΩ  
500  
500  
V
V
S
G
VGSS  
VGSM  
Continuous  
Transient  
±30  
±40  
V
V
S
ID25  
IDM  
TC = 25°C  
TC = 25°C, pulse width limited by TJM  
80  
320  
A
A
D
IA  
TC = 25°C  
TC = 25°C  
80  
5
A
J
G = Gate  
S = Source  
D = Drain  
EAS  
Either Source terminal at miniBLOC can be used  
as Main or Kelvin Source  
dV/dt  
PD  
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C  
TC = 25°C  
20  
V/ns  
W
890  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
Features  
Double metal process for low  
z
gate resistance  
z miniBLOC, with Aluminium nitride  
isolation  
TL  
1.6mm (0.062 in.) from case for 10s  
300  
°C  
z Unclamped Inductive Switching (UIS)  
rated  
VISOL  
50/60Hz, RMS  
t = 1min  
t = 1s  
2500  
3000  
V~  
V~  
IISOL ≤ 1mA  
z Low package inductance  
z Fast intrinsic Rectifier  
Md  
Mounting torque  
Terminal connection torque  
1.5/13  
1.3/ 11.5  
Nm/lb.in.  
Nm/lb.in.  
Applications  
Weight  
30  
g
z
DC-DC converters  
z
Switched-mode and resonant-mode  
power supplies  
DC choppers  
Pulse generators  
z
Symbol  
Test Conditions  
Characteristic Values  
z
(TJ = 25°C, unless otherwise specified)  
Min. Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 1mA  
VDS = VGS, ID = 8mA  
VGS = ±30V, VDS = 0V  
500  
V
V
Advantages  
z
Easy to mount  
Space savings  
3.0  
5.5  
z
z
High power density  
±200  
nA  
IDSS  
VDS = VDSS  
VGS = 0V  
100  
5
μA  
mA  
TJ = 125°C  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
60  
mΩ  
DS99031B(05/08)  
© 2008 IXYS Corporation, All rights reserved  
IXFN80N50Q2  
Symbol  
Test Conditions  
Characteristic Values  
SOT-227B Outline  
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 10V, ID = 0.5 • ID25, Note 1  
40  
55  
S
Ciss  
Coss  
Crss  
12.8  
1640  
440  
nF  
pF  
pF  
VGS = 0V, VDS = 25V, f = 1MHz  
td(on)  
tr  
td(off)  
tf  
29  
25  
60  
11  
ns  
ns  
ns  
ns  
Resistive Switching Times  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 1Ω (External)  
Qg(on)  
Qgs  
250  
60  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
120  
RthJC  
RthCS  
0.14 °C/W  
°C/W  
0.05  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ.  
Max.  
IS  
VGS = 0V  
80  
A
A
ISM  
VSD  
trr  
Repetitive, pulse width limited by TJM  
IF = IS, VGS = 0V, Note 1  
320  
1.5  
V
250  
ns  
IF = 25A, -di/dt = 100A/μs  
QRM  
IRM  
1.2  
12  
μC  
A
VR= 100V, VGS = 0V  
Notes1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.  
PRELIMINARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from data gathered during objective characterizations of preliminary engineering lots; but also may yet  
contain some information supplied during a pre-production design evaluation. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXFN80N50Q2  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
80  
70  
60  
50  
40  
30  
20  
10  
0
200  
180  
160  
140  
120  
100  
80  
VGS = 10V  
8V  
VGS = 10V  
8V  
7V  
6V  
5V  
7V  
60  
6V  
5V  
40  
20  
0
0
2
4
6
8
10 12 14 16 18 20  
0
1
2 3  
VD S - Volts  
4
5
6
VD S - Volts  
Fig. 3. Output Characteristics  
@ 125ºC  
Fig. 4. RDS(on) Normalized to ID = 40A Value  
vs. Junction Temperature  
80  
70  
60  
50  
40  
30  
20  
10  
0
3.2  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
VGS = 10V  
7V  
VGS = 10V  
ID = 80A  
6V  
5V  
ID = 40A  
0
2
4
6
VD S - Volts  
8
10  
12  
-50 -25  
0
25  
TJ - Degrees Centigrade  
50  
75  
100 125 150  
Fig. 5. RDS(on) Normalized to ID = 40A Value  
vs. Drain Current  
Fig. 6. Drain Current vs. Case Temperature  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
External Lead Current Limit  
VGS = 10V  
TJ = 125ºC  
TJ = 25ºC  
0
20 40 60 80 100 120 140 160 180 200  
I D - Amperes  
-50 -25  
0
25  
50  
TC - Degrees Centigrade  
75  
100 125 150  
© 2008 IXYS Corporation, All rights reserved  
IXFN80N50Q2  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
120  
100  
80  
60  
40  
20  
0
140  
120  
100  
80  
TJ = - 40ºC  
25ºC  
TJ = 125ºC  
25ºC  
- 40ºC  
125ºC  
60  
40  
20  
0
3.5  
4.0  
4.5  
5.0 5.5  
VG S - Volts  
6.0  
6.5  
7.0  
7.5  
0
20 40 60 80 100 120 140 160 180  
I D - Amperes  
Fig. 9. Source Current vs. Source-To-Drain  
Voltage  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
240  
200  
160  
120  
80  
VDS = 250V  
ID = 40A  
TJ = 25ºC  
IG = 10mA  
TJ = 125ºC  
40  
0
0.4  
0.6  
0.8 1.0  
VS D - Volts  
1.2  
1.4  
1.6  
0
40  
80  
120  
Q G - nanoCoulombs  
160  
200  
240  
280  
Fig. 12. Maximum Transient Thermal  
Impedance  
Fig. 11. Capacitance  
1
100000  
10000  
1000  
f
= 1MHz  
C
C
iss  
0.1  
0.01  
oss  
C
rss  
0.001  
100  
0.0001  
0.001  
0.01  
0.1  
Pulse Width - Seconds  
1
10  
0
5
10  
15  
20  
VD S - Volts  
25  
30  
35  
40  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS REF: F_80N50Q2(95) 05-28-08-G  
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