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IXFN66N50Q2

型号：

IXFN66N50Q2

描述：

HiPerFET功率MOSFET Q2级[ HiPerFET Power MOSFET Q2-Class ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

121 K

下载PDF手册
HiPerFETTM  
Power MOSFET  
Q2-Class  
IXFN66N50Q2  
VDSS = 500V  
ID25 = 66A  
RDS(on) ≤ 80mΩ  
trr  
≤ 250ns  
N-Channel Enhancement Mode  
Avalanche Rated, Low Qg, Low  
Intrinsic Rg, High dV/dt, Low trr  
miniBLOC, SOT-227 B (IXFN)  
E153432  
Symbol  
Test Conditions  
Maximum Ratings  
VDSS  
VDGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1MΩ  
500  
500  
V
V
S
G
VGSS  
VGSM  
Continuous  
Transient  
±30  
±40  
V
V
S
ID25  
IDM  
TC = 25°C  
TC = 25°C, pulse width limited by TJM  
66  
264  
A
A
D
IA  
TC = 25°C  
TC = 25°C  
66  
4
A
J
G = Gate  
S = Source  
D = Drain  
EAS  
Either Source terminal at miniBLOC can be used  
as Main or Kelvin Source  
dV/dt  
PD  
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C  
TC = 25°C  
20  
V/ns  
W
735  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
Features  
Double metal process for low  
z
gate resistance  
z miniBLOC, with Aluminium nitride  
isolation  
TL  
1.6mm (0.062 in.) from case for 10s  
300  
°C  
z Unclamped Inductive Switching (UIS)  
rated  
VISOL  
50/60Hz, RMS  
t = 1min  
t = 1s  
2500  
3000  
V~  
V~  
IISOL ≤ 1mA  
z Low package inductance  
z Fast intrinsic Rectifier  
Md  
Mounting torque  
Terminal connection torque  
1.5/13  
1.3/ 11.5  
Nm/lb.in.  
Nm/lb.in.  
Applications  
z
Weight  
30  
g
DC-DC converters  
Switched-mode and resonant-mode  
z
power supplies  
DC choppers  
Pulse generators  
z
Symbol  
Test Conditions  
Characteristic Values  
z
(TJ = 25°C, unless otherwise specified)  
Min. Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 3mA  
VDS = VGS, ID = 8mA  
VGS = ±30V, VDS = 0V  
500  
V
V
Advantages  
z
Easy to mount  
Space savings  
3.0  
5.5  
z
z
High power density  
±200  
nA  
IDSS  
VDS = VDSS  
VGS = 0V  
50  
3
μA  
mA  
TJ = 125°C  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
80  
mΩ  
DS99077B(05/08)  
© 2008 IXYS Corporation, All rights reserved  
IXFN66N50Q2  
Symbol  
Test Conditions  
Characteristic Values  
SOT-227B Outline  
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 10V, ID = 0.5 • ID25, Note 1  
30  
44  
S
Ciss  
Coss  
Crss  
9125  
1200  
318  
pF  
pF  
pF  
VGS = 0V, VDS = 25V, f = 1MHz  
td(on)  
tr  
td(off)  
tf  
32  
16  
60  
10  
ns  
ns  
ns  
ns  
Resistive Switching Times  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 1Ω (External)  
Qg(on)  
Qgs  
200  
47  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
98  
RthJC  
RthCS  
0.17 °C/W  
°C/W  
0.05  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ.  
Max.  
IS  
VGS = 0V  
66  
A
A
ISM  
VSD  
trr  
Repetitive, pulse width limited by TJM  
IF = IS, VGS = 0V, Note 1  
264  
1.5  
V
250  
ns  
IF = 25A, -di/dt = 100A/μs  
QRM  
IRM  
1
10  
μC  
A
VR= 100V, VGS = 0V  
Notes1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXFN66N50Q2  
Fig. 1. Output Characteristics  
Fig. 2. Extended Output Characteristics  
@ 25 C  
°
@ 25 C  
°
70  
60  
50  
40  
30  
20  
10  
0
160  
140  
120  
100  
80  
V
GS  
= 10V  
8V  
V
GS  
= 10V  
8V  
7V  
6V  
7V  
5.5V  
60  
5V  
6V  
5V  
40  
4.5V  
20  
0
0
1
2
3
4
VD S - Volts  
5
6
7
0
2
4
6
8
10  
12  
VD S - Volts  
14  
16  
18  
20  
Fig. 3. Output Characteristics  
Fig. 4. RDS(on) Normalized to 0.5 ID25 Value  
vs. Junction Temperature  
@ 125 C  
°
70  
60  
50  
40  
30  
20  
10  
0
3.0  
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
V
= 10V  
7V  
GS  
V
= 10V  
GS  
6V  
I
= 66A  
D
5V  
I
= 33A  
D
4.5V  
3.5V  
12  
0
2
4
6
8
10  
14  
-50 -25  
0
25  
50  
75  
100 125 150  
VD S - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to 0.5 ID25 Value  
vs. ID  
Fig. 6. Drain Current vs. Case  
Temperature  
70  
60  
50  
40  
30  
20  
10  
0
3.0  
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
V
GS  
= 10V  
T = 125 C  
°
J
T = 25 C  
°
J
0
20  
40  
60  
80 100 120 140 160  
-50 -25  
0
25  
50  
75  
100 125 150  
I D - Amperes  
TC - Degrees Centigrade  
© 2008 IXYS Corporation, All rights reserved  
IXFN66N50Q2  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
T = - 40 C  
°
J
25 C  
°
T = 125 C  
°
J
125 C  
°
25 C  
°
- 40 C  
°
0
20  
40  
60  
80  
100  
120  
140  
3.0  
3.5  
4.0  
4.5 5.0  
VG S - Volts  
5.5  
6.0  
6.5  
7.0  
I D - Amperes  
Fig. 9. Source Current vs.  
Source-To-Drain Voltage  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
180  
160  
140  
120  
100  
80  
V
= 250V  
DS  
I = 33A  
D
I
G
= 10mA  
60  
T = 125 C  
°
J
40  
T = 25 C  
°
J
20  
0
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3  
VS D - Volts  
0
20 40 60 80 100 120 140 160 180 200  
Q G - nanoCoulombs  
Fig. 12. Forward-Bias Safe Operating Area  
Fig. 11. Capacitance  
100000  
10000  
1000  
1000  
100  
10  
f
= 1MHz  
R
Limit  
DS(on)  
C
iss  
25µs  
100µs  
1ms  
C
oss  
10ms  
T =  
J
150ºC  
DC  
T =  
C
Single Pulse  
25ºC  
C
rss  
1
100  
10  
100  
VD S - Volts  
1000  
0
5
10  
15  
20  
VD S - Volts  
25  
30  
35  
40  
IXYS reserves the right to change limits, test conditions, and dimensions.  
Fig. 13. Maximum Transient Thermal Impedance  
1.00  
0.10  
0.01  
0.00  
0.1  
1
10  
100  
1000  
10000  
Pulse Width - milliseconds  
IXYS REF: F_66N50Q2(94) 5-28-08-C  
© 2008 IXYS Corporation, All rights reserved  
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