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IXFN64N50P_09

型号：

IXFN64N50P_09

描述：

Polar功率MOSFET HiperFET[ Polar Power MOSFET HiPerFET ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

4 页

PDF大小：

115 K

下载PDF手册
PolarTM Power MOSFET  
HiPerFETTM  
VDSS = 500V  
ID25 = 50A  
RDS(on) ≤ 85mΩ  
≤ 200ns  
IXFN64N50P  
N-Channel Enhancement Mode  
Avalanche Rated  
trr  
Fast Intrinsic Diode  
miniBLOC, SOT-227 B  
E153432  
S
Symbol  
Test Conditions  
Maximum Ratings  
G
VDSS  
VDGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1MΩ  
500  
500  
V
V
S
VGSS  
VGSM  
Continuous  
Transient  
±30  
± 40  
V
V
D
ID25  
IDM  
TC = 25°C  
50  
150  
A
A
G = Gate  
S = Source  
D = Drain  
TC = 25°C, Pulse Width Limited by TJM  
IA  
EAS  
TC = 25°C  
TC = 25°C  
64  
2.5  
A
J
Either Source terminal at miniBLOC can be used  
as Main or Kelvin Source  
dV/dt  
PD  
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C  
TC = 25°C  
20  
V/ns  
W
625  
Features  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
z International Standard Package  
z miniBLOC, with Aluminium Nitride  
Isolation  
z Isolation Voltage 2500 V~  
z Fast Intrinsic Diode  
TL  
1.6mm (0.062 in.) from Case for 10s  
300  
°C  
z Avalanche Rated  
VISOL  
50/60 Hz, RMS  
t = 1min  
2500  
3000  
V~  
V~  
z
IISOL ≤ 1mA  
t = 1s  
Low RDS(on)  
Md  
Mounting Torque  
Terminal Connection Torque  
1.5/13  
1.3/11.5  
Nm/lb.in.  
Nm/lb.in.  
Advantages  
z Low Gate Drive Requirement  
z High Power Density  
Weight  
30  
g
Applications:  
z Switched-Mode and Resonant-Mode  
Power Supplies  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
z DC-DC Converters  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 8mA  
VGS = ±30V, VDS = 0V  
VDS = VDSS, VGS= 0V  
500  
V
V
z Laser Drivers  
z AC and DC Motor Drives  
z Robotics and Servo Controls  
3.0  
5.5  
±200  
nA  
IDSS  
25  
1
μA  
mA  
TJ = 125°  
RDS(on)  
VGS = 10V, ID = 32A, Note 1  
85 mΩ  
DS99349F(05/09)  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXFN64N50P  
Symbol  
Test Conditions  
Characteristic Values  
SOT-227B Outline  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 20V, ID = 32A, Note 1  
30  
50  
S
Ciss  
Coss  
Crss  
td(on)  
tr  
9700  
970  
30  
nF  
pF  
pF  
ns  
ns  
ns  
ns  
VGS = 0V, VDS = 25V, f = 1MHz  
30  
Resistive Switching Times  
VGS = 10V, VDS = 0.5 • VDSS, ID = 32A  
RG = 2Ω (External)  
25  
td(off)  
tf  
85  
22  
Qg(on)  
Qgs  
150  
50  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 32A  
Qgd  
50  
RthJC  
RthCS  
0.20 °C/W  
°C/W  
0.05  
Source-Drain Diode  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Symbol  
IS  
Test Conditions  
Min.  
Typ.  
Max.  
VGS = 0V  
64  
A
A
V
ISM  
Repetitive, Pulse Width Limited by TJM  
IF = 64A, VGS = 0V, Note 1  
250  
VSD  
1.5  
trr  
QRM  
IRM  
200  
ns  
μC  
A
IF = 25A, -di/dt = 100A/μs  
0.6  
6.0  
VR = 100V  
Note 1: Pulse Test, t ≤ 300μs; Duty Cycle, d ≤ 2%.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXFN64N50P  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
160  
140  
120  
100  
80  
70  
60  
50  
40  
30  
20  
10  
0
VGS = 10V  
8V  
VGS = 10V  
8V  
7V  
6V  
7V  
60  
6V  
5V  
40  
5V  
20  
0
0
5
10  
15  
20  
25  
30  
0.0  
1.0  
2.0  
3.0  
4.0  
5.0  
6.0  
7.0  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 32A Value  
vs. Junction Temperature  
Fig. 3. Output Characteristics  
@ 125ºC  
70  
60  
50  
40  
30  
20  
10  
0
3.2  
3.0  
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
VGS = 10V  
VGS = 10V  
8V  
7V  
6V  
I D = 64A  
I D = 32A  
5V  
0
2
4
6
8
10  
12  
14  
16  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
TJ - Degrees Centigrade  
VDS - Volts  
Fig. 5. RDS(on) Normalized to ID = 32A Value  
vs. Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
3.4  
3.2  
3.0  
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
VGS = 10V  
TJ = 125ºC  
TJ = 25ºC  
0
0
20  
40  
60  
80  
100  
120  
140  
160  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
ID - Amperes  
TC - Degrees Centigrade  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXFN64N50P  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
TJ = - 40ºC  
25ºC  
TJ = 125ºC  
25ºC  
- 40ºC  
125ºC  
0
20  
40  
60  
80  
100  
120  
140  
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
240  
220  
200  
180  
160  
140  
120  
100  
80  
VDS = 250V  
I D = 32A  
I G = 10mA  
TJ = 125ºC  
60  
40  
TJ = 25ºC  
20  
0
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5  
VSD - Volts  
0
20  
40  
60  
80  
100  
120  
140  
160  
QG - NanoCoulombs  
Fig. 12. Maximum Transient Thermal  
Impedance  
Fig. 11. Capacitance  
100,000  
10,000  
1,000  
100  
1.000  
0.100  
0.010  
f
= 1 MHz  
C
iss  
C
oss  
C
rss  
10  
0
5
10  
15  
20  
25  
30  
35  
40  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: F_64N50P(9J)4-27-09  
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