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IXFN64N50PD2

型号：

IXFN64N50PD2

描述：

PolarHV HiPerFET功率MOSFET[ PolarHV HiPerFET Power MOSFET ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

144 K

下载PDF手册
PolarHVTM HiPerFET  
Power MOSFET  
VDSS = 500V  
ID25 = 50A  
RDS(on) ≤ 85mΩ  
IXFN64N50PD2  
IXFN64N50PD3  
Boost & Buck Configurations  
(Ultra-fast FRED Diode)  
trr  
≤ 200ns  
3
3
miniBLOC, SOT-227 B  
E153432  
4
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Diode  
1
2
2
2
4
1
1
D2  
D3  
4
3
Symbol  
Test Conditions  
Maximum Ratings  
D2 Pin Out:  
1 = Source  
2 = Gate  
VDSS  
VDGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1MΩ  
500  
500  
V
V
3 = Drain / Diode anode  
4 = Diode cathode  
VGSS  
VGSM  
Continuous  
Transient  
± 30  
± 40  
V
V
D3 Pin Out:  
1 = Source / Diode Cathode 2 = Gate  
3 = Drain  
4 = Diode cathode  
ID25  
IDM  
TC = 25°C  
TC = 25°C, Pulse Width Limited by TJM  
50  
200  
A
A
IA  
EAS  
TC = 25°C  
TC = 25°C  
64  
2.5  
A
J
Features  
z Fast Intrinsic Diode in Boost  
Configuration  
dV/dt  
PD  
IS ≤ IDM, VDD ≤ VDSS, TJ ≤150°C  
TC = 25°C  
10  
V/ns  
W
z International Standard Package  
z Encapsulating Epoxy Meets  
UL94V-0, Flammability Classification  
z miniBLOC with Aluminium Nitride  
Isolation  
625  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
Md  
Mounting Torque  
Terminal Connection Torque  
1.5/13  
1.3/11.5  
Nm/lb.in.  
Nm/lb.in.  
z Avalanche Rated  
z Low Package Inductance  
Weight  
30  
g
Advantages  
z
Easy To Mount  
Space Savings  
Tightly Coupled FRED Diode  
High Power Density  
z
z
z
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
500  
3.0  
Typ.  
Max.  
Applications  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 500μA  
VDS = VGS, ID = 8mA  
VGS = ± 30V, VDS = 0V  
VDS = VDSS, VGS= 0V  
V
V
z PFC Circuits  
5.5  
z Uninterruptible Power Supplies (UPS)  
z Switched-Mode and Resonant-Mode  
Power Supplies  
± 200 nA  
IDSS  
50 μA  
TJ = 125°C  
1 mA  
z AC and DC Motor Drives  
z High Speed Power Switching  
Applications  
RDS(on)  
VGS = 10V, ID = 32A, Note 1  
85 mΩ  
z Robotics and Servo Controls  
DS99507F(4/09)  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXFN64N50PD2  
IXFN64N50PD3  
Symbol  
Test Conditions  
Characteristic Values  
SOT-227B (IXFN) Outline  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 20V, ID = 32A, Note 1  
30  
50  
S
Ciss  
Coss  
Crss  
9700  
970  
30  
pF  
pF  
pF  
VGS = 0V, VDS = 25V, f = 1MHz  
td(on)  
tr  
td(off)  
tf  
30  
25  
85  
22  
ns  
ns  
ns  
ns  
Resistive Switching Times  
VGS = 10V, VDS = 0.5 • VDSS, ID = 32A  
RG = 2Ω (External)  
Qg(on)  
Qgs  
150  
50  
nC  
nC  
nC  
(M4 screws (4x) supplied)  
VGS= 10V, VDS = 0.5 • VDSS, ID = 32A  
Qgd  
50  
RthJC  
RthCS  
0.20 °C/W  
°C/W  
0.05  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
IS  
VGS = 0V  
64  
A
A
V
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
250  
1.5  
trr  
200 ns  
IF = 25A, -di/dt = 100A/μs  
QRM  
IRM  
0.6  
6.0  
μC  
VR = 100V,VGS = 0V  
A
FRED Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
IF25  
VF  
TC = 115°C  
30  
A
IF = 30A, Note 1  
2.5  
1.8  
2.75  
V
V
TVJ = 150°C  
IRM  
trr  
IF = 10A, diF/dt = -100A/μs, TVJ = 100°C  
5.5  
11.5  
A
VR = 100V, VGE = 0V  
200  
ns  
RthJC  
RthCS  
0.9 °C/W  
°C/W  
with Heat Transfer Paste  
0.25  
Note 1: Pulse Test, t ≤ 300μs; Duty Cycle, d ≤ 2%.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,727,585  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
6,534,343  
6,583,505  
6,710,405 B2 6,759,692  
6,710,463  
IXFN64N50PD2  
IXFN64N50PD3  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
160  
140  
120  
100  
80  
70  
60  
50  
40  
30  
20  
10  
0
VGS = 10V  
8V  
VGS = 10V  
8V  
7V  
6V  
7V  
60  
6V  
5V  
40  
5V  
20  
0
0
5
10  
15  
20  
25  
30  
0.0  
1.0  
2.0  
3.0  
4.0  
5.0  
6.0  
7.0  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 32A Value  
vs. Junction Temperature  
Fig. 3. Output Characteristics  
@ 125ºC  
70  
60  
50  
40  
30  
20  
10  
0
3.2  
3.0  
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
VGS = 10V  
VGS = 10V  
8V  
7V  
6V  
I D = 64A  
I D = 32A  
5V  
0
2
4
6
8
10  
12  
14  
16  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
TJ - Degrees Centigrade  
VDS - Volts  
Fig. 5. RDS(on) Normalized to ID = 32A Value  
vs. Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
3.4  
3.2  
3.0  
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
VGS = 10V  
TJ = 125ºC  
TJ = 25ºC  
0
0
20  
40  
60  
80  
100  
120  
140  
160  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
ID - Amperes  
TC - Degrees Centigrade  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXFN64N50PD2  
IXFN64N50PD3  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
TJ = - 40ºC  
25ºC  
TJ = 125ºC  
25ºC  
- 40ºC  
125ºC  
0
20  
40  
60  
80  
100  
120  
140  
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
240  
220  
200  
180  
160  
140  
120  
100  
80  
VDS = 250V  
I
I
D = 32A  
G = 10mA  
TJ = 125ºC  
60  
40  
TJ = 25ºC  
20  
0
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5  
VSD - Volts  
0
20  
40  
60  
80  
100  
120  
140  
160  
QG - NanoCoulombs  
Fig. 12. Maximum Transient Thermal  
Impedance  
Fig. 11. Capacitance  
100,000  
10,000  
1,000  
100  
1.000  
= 1 MHz  
f
C
iss  
0.100  
C
oss  
C
rss  
0.010  
0.001  
10  
0.01  
0.1  
1
10  
0
5
10  
15  
20  
25  
30  
35  
40  
Pulse Width - Seconds  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: F_64N50P(9J)4-27-09  
IXFN64N50PD2  
IXFN64N50PD3  
Figs.13-19 FRED Diode Curves  
70  
A
5
60  
A
TVJ= 100°C  
VR = 600V  
TVJ= 100°C  
VR = 600V  
μC  
60  
IF 50  
40  
50  
4
Qr  
IRM  
IF= 60A  
IF= 30A  
IF= 15A  
IF= 60A  
IF= 30A  
IF=15A  
40  
30  
20  
10  
0
3
TVJ=150°C  
TVJ=100°C  
30  
2
1
0
20  
TVJ= 25°C  
10  
0
A/μs  
-diF/dt  
0
1
2
3
V
4
100  
1000  
0
200 400 600 1000  
A/μs  
-diF/dt  
VF  
Fig. 13. Forward current IF versus VF  
2.0  
Fig. 14. Reverse recovery charge Qr  
versus -diF/dt  
Fig. 15. Peak reverse current IRM  
versus -diF/dt  
220  
120  
1.2  
μs  
TVJ= 100°C  
TVJ= 100°C  
VR = 600V  
ns  
IF = 30A  
V
200  
VFR  
tfr  
1.5  
Kf  
tfr  
trr  
VFR  
80  
40  
0
0.8  
180  
IF= 60A  
1.0  
IF= 30A  
IRM  
IF=15A  
160  
0.4  
0.5  
140  
120  
Qr  
0.0  
0.
A/μs  
0
40  
80  
120  
160  
0
200 400 600 1000  
0
200 400 600 1000  
C
A/μs  
diF/dt  
TVJ  
-diF/dt  
Fig. 16. Dynamic parameters Qr, IRM  
versus TVJ  
Fig. 17. Recovery time trr versus -diF/dt  
Fig. 18. Peak forward voltage VFR and  
tfr versus diF/dt  
2
1
Constants for ZthJC calculation:  
K/W  
i
Rthi (K/W)  
ti (s)  
ZthJC  
0.1  
1
2
3
0.465  
0.179  
0.256  
0.0052  
0.0003  
0.0397  
0.01  
0.001  
0.00001  
s
0.0001  
0.001  
0.01  
0.1  
1
t
Fig. 19 Transient thermal resistance junction to case  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXYS REF: F_64N50P(9J)4-27-09  
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