PolarHVTM HiPerFET
Power MOSFET
IXFN 48N60P
VDSS = 600 V
ID25 = 40 A
R
≤ 140 mΩ
trrDS(on) ≤ 200 ns
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25°C to 150°C
600
600
V
V
miniBLOC, SOT-227 B (IXFN)
E153432
TJ = 25°C to 150°C; RGS = 1 MΩ
S
VGSS
VGSM
Continuous
Transient
30
40
V
V
G
ID25
IDM
TC = 25°C
40
A
A
TC = 25°C, pulse width limited by TJM
110
S
IAR
TC = 25°C
48
A
D
D = Drain
EAR
EAS
TC = 25°C
TC = 25°C
70
mJ
J
G = Gate
S = Source
2.0
dv/dt
PD
IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 2 Ω
,
10
V/ns
Either Source terminal S can be used as the
Source terminal or the Kelvin Source (gate
return) terminal.
TC = 25°C
625
W
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
Features
• International standard package
• Encapsulating epoxy meets
UL94V-0, flammability classification
• miniBLOC with Aluminium nitride
isolation
TL
1.6 mm (0.062 in.) from case for 10 s
300
2500
3000
°C
V~
V~
VISOL
50/60 Hz, RMS
t = 1 min
IISOL ≤ 1 mA
t = 1 s
Md
Mounting torque
Terminal connection torque
1.5 / 13 Nm/lb.in.
1.5 / 13 Nm/lb.in.
z Fast recovery diode
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
Weight
30
g
Symbol
Test Conditions
Characteristic Values
Advantages
(TJ = 25°C, unless otherwise specified)
Min. Typ.
Max.
z
Easy to mount
Space savings
High power density
BVDSS
VGS(th)
IGSS
VGS = 0 V, ID = 250 μA
VDS = VGS, ID = 8 mA
VGS = 30 VDC, VDS = 0
600
V
V
z
z
3.0
5.5
200
25
nA
IDSS
VDS = VDSS
VGS = 0 V
μA
μA
TJ = 125°C
1000
RDS(on)
VGS = 10 V, ID = 4 A
140 mΩ
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
DS99337E(03/06)
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