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IXFN420N10T

型号：

IXFN420N10T

描述：

GigaMOS海沟HiperFET功率MOSFET[ GigaMOS Trench HiperFET Power MOSFET ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

178 K

下载PDF手册
Advance Technical Information  
GigaMOSTM Trench  
HiperFETTM  
Power MOSFET  
VDSS = 100V  
ID25 = 420A  
RDS(on) ≤ 2.3mΩ  
IXFN420N10T  
trr  
≤ 140ns  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Diode  
miniBLOC, SOT-227  
E153432  
S
G
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 175°C  
TJ = 25°C to 175°C, RGS = 1MΩ  
100  
100  
V
V
VDGR  
S
VGSS  
VGSM  
Continuous  
Transient  
±20  
±30  
V
V
D
ID25  
TC = 25°C (Chip Capability)  
420  
A
G = Gate  
D = Drain  
S = Source  
IL(RMS)  
IDM  
External Lead Current Limit  
TC = 25°C, Pulse Width Limited by TJM  
200  
1000  
A
A
Either Source Terminal S can be used as  
the Source Terminal or the Kelvin Source  
( Gate Return ) Terminal.  
IA  
TC = 25°C  
TC = 25°C  
100  
5
A
J
EAS  
dV/dt  
PD  
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C  
TC = 25°C  
20  
V/ns  
W
Features  
1070  
ꢀInternational Standard Package  
ꢀminiBLOC, with Aluminium Nitride  
Isolation  
TJ  
TJM  
Tstg  
-55 ... +175  
175  
-55 ... +175  
°C  
°C  
°C  
ꢀIsolation Voltage 2500 V~  
ꢀHigh Current Handling Capability  
ꢀFast Intrinsic Diode  
TL  
TSOLD  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10s  
300  
260  
°C  
°C  
VISOL  
50/60 Hz, RMS  
t = 1 minute  
t = 1 second  
2500  
3000  
V~  
V~  
ꢀAvalanche Rated  
IISOL ≤ 1mA  
ꢀ
Low RDS(on)  
Md  
Mounting Torque  
Terminal Connection Torque  
1.5/13  
1.3/11.5  
Nm/lb.in.  
Nm/lb.in.  
Advantages  
Weight  
30  
g
ꢀ
Easy to Mount  
Space Savings  
High Power Density  
ꢀ
ꢀ
Symbol  
Test Conditions  
Characteristic Values  
Applications  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
100  
2.5  
Typ.  
Max.  
ꢀ
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 3mA  
VDS = VGS, ID = 8mA  
VGS = ±20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
V
V
Synchronous Recification  
ꢀDC-DC Converters  
ꢀBattery Chargers  
5.0  
ꢀSwitch-Mode and Resonant-Mode  
Power Supplies  
±200 nA  
IDSS  
50 μA  
5 mA  
ꢀDC Choppers  
TJ = 150°C  
ꢀAC Motor Drives  
ꢀUninterruptible Power Supplies  
ꢀHigh Speed Power Switching  
Applications  
RDS(on)  
VGS = 10V, ID = 60A, Note 1  
2.3 mΩ  
DS100199(09/09)  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXFN420N10T  
Symbol  
Test Conditions  
Characteristic Values  
SOT-227B (IXFN) Outline  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 10V, ID = 60A, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
Gate Input Resistance  
110  
185  
S
Ciss  
Coss  
Crss  
47  
4390  
530  
nF  
pF  
pF  
RGi  
td(on)  
tr  
1.46  
47  
Ω
ns  
ns  
ns  
ns  
Resistive Switching Times  
VGS = 10V, VDS = 0.5 • VDSS, ID = 100A  
RG = 1Ω (External)  
155  
115  
255  
td(off)  
tf  
(M4 screws (4x) supplied)  
Qg(on)  
Qgs  
670  
170  
195  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
RthJC  
RthCS  
0.14 °C/W  
°C/W  
0.05  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min. Typ.  
Max.  
IS  
VGS = 0V  
420  
A
A
V
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = 60A, VGS = 0V, Note 1  
IF = 150A, VGS = 0V  
1680  
1.2  
trr  
QRM  
140 ns  
0.38  
7.00  
μC  
-di/dt = 100A/μs  
VR = 60V  
IRM  
A
Note 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a  
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test  
conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXFN420N10T  
Fig. 1. Output Characteristics  
@ TJ = 25ºC  
Fig. 2. Extended Output Characteristics  
@ TJ = 25ºC  
350  
300  
250  
200  
150  
100  
50  
400  
350  
300  
250  
200  
150  
100  
50  
VGS = 15V  
VGS = 15V  
10V  
10V  
8V  
7V  
7V  
6V  
5.5V  
6V  
5V  
4V  
5V  
4V  
0
0
0.0  
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
VDS - Volts  
VDS - Volts  
Fig. 3. Output Characteristics  
@ TJ = 150ºC  
Fig. 4. Normalized RDS(on) vs. Junction Temperature  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
320  
280  
240  
200  
160  
120  
80  
VGS = 15V  
VGS = 10V  
10V  
8V  
I
< 420A  
D
7V  
6V  
5V  
4.5V  
4V  
40  
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
0.0  
0.2  
0.4  
0.6  
0.8  
VDS - Volts  
1.0  
1.2  
1.4  
1.6  
TJ - Degrees Centigrade  
Fig. 5. Normalized RDS(on) vs. Drain Current  
Fig. 6. Drain Current vs. Case Temperature  
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
220  
VGS = 10V  
200  
180  
160  
140  
120  
100  
80  
External Lead Current Limit  
TJ = 175ºC  
60  
40  
TJ = 25ºC  
20  
0
0
50  
100  
150  
200  
250  
300  
350  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
ID - Amperes  
TC - Degrees Centigrade  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXFN420N10T  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
180  
160  
140  
120  
100  
80  
350  
300  
250  
200  
150  
100  
50  
TJ = - 40ºC  
25ºC  
TJ = 150ºC  
150ºC  
25ºC  
60  
- 40ºC  
40  
20  
0
0
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
350  
300  
250  
200  
150  
100  
50  
VDS = 50V  
I D = 210A  
I
G = 10mA  
TJ = 150ºC  
TJ = 25ºC  
0
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
0
100  
200  
300  
400  
500  
600  
700  
VSD - Volts  
QG - NanoCoulombs  
Fig. 12. Forward-Bias Safe Operating Area  
Fig. 11. Capacitance  
10,000  
1,000  
100  
10  
100.0  
10.0  
1.0  
T
T
= 175ºC  
= 25ºC  
J
C
R
Limit  
C
DS(on)  
iss  
Single Pulse  
25µs  
External Lead Limit  
100µs  
C
oss  
1ms  
C
rss  
10ms  
= 1 MHz  
5
f
DC  
100ms  
0.1  
1
0
10  
15  
20  
25  
30  
35  
40  
1
10  
100  
1,000  
VDS - Volts  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: F_420N10T (9V)9-22-09  
IXFN420N10T  
Fig. 13. Resistive Turn-on Rise Time  
vs. Junction Temperature  
Fig. 14. Resistive Turn-on Rise Time  
vs. Drain Current  
340  
300  
260  
220  
180  
140  
100  
320  
280  
240  
200  
160  
120  
80  
RG = 1ꢀ , VGS = 10V  
VDS = 50V  
RG = 1Ω , VGS = 10V  
VDS = 50V  
I D = 200A  
TJ = 125ºC  
TJ = 25ºC  
I D = 100A  
40  
0
40  
60  
80  
100  
120  
140  
160  
180  
200  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
TJ - Degrees Centigrade  
ID - Amperes  
Fig. 16. Resistive Turn-off Switching Times  
vs. Junction Temperature  
Fig. 15. Resistive Turn-on Switching Times  
vs. Gate Resistance  
700  
600  
500  
400  
300  
200  
100  
0
220  
700  
600  
500  
400  
300  
200  
100  
240  
t f  
td(off) - - - -  
t r  
td(on) - - - -  
200  
180  
160  
140  
120  
100  
80  
RG = 1Ω, VGS = 10V  
TJ = 125ºC, VGS = 10V  
VDS = 50V  
200  
160  
120  
80  
VDS = 50V  
I D = 200A  
I D = 200A  
I D = 100A  
I D = 100A  
40  
0
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
1
2
3
4
5
6
7
8
9
10  
TJ - Degrees Centigrade  
RG - Ohms  
Fig. 18. Resistive Turn-off Switching Times  
vs. Gate Resistance  
Fig. 17. Resistive Turn-off Switching Times  
vs. Drain Current  
800  
700  
600  
500  
400  
300  
200  
100  
800  
700  
600  
500  
400  
300  
200  
100  
500  
400  
300  
200  
100  
0
260  
220  
180  
140  
100  
60  
t f  
td(off) - - - -  
t f  
t
d(off) - - - -  
RG = 1ꢀ, VGS = 10V  
TJ = 125ºC, VGS = 10V  
VDS = 50V  
VDS = 50V  
I D = 200A  
TJ = 125ºC  
I D = 100A  
TJ = 25ºC  
1
2
3
4
5
6
7
8
9
10  
40  
60  
80  
100  
120  
140  
160  
180  
200  
ID - Amperes  
RG - Ohms  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXFN420N10T  
Fig. 19. Maximium Transient Thermal Impedance  
.sadgsfgsf  
0.200  
0.100  
0.010  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: F_420N10T (9V)9-22-09  
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