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IXFN38N100P

型号：

IXFN38N100P

描述：

Polar功率MOSFET HiperFET[ Polar Power MOSFET HiPerFET ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

118 K

下载PDF手册
PolarTM Power MOSFET  
HiPerFETTM  
VDSS = 1000V  
ID25 = 38A  
RDS(on) ≤ 210mΩ  
≤ 300ns  
IXFN38N100P  
trr  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Diode  
miniBLOC, SOT-227 B  
E153432  
S
G
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 150°C  
1000  
1000  
V
V
VDGR  
TJ = 25°C to 150°C, RGS = 1MΩ  
VGSS  
VGSM  
Continuous  
Transient  
± 30  
± 40  
V
V
S
D
ID25  
IDM  
TC = 25°C  
38  
A
A
G = Gate  
S = Source  
D = Drain  
TC = 25°C, Pulse Width Limited by TJM  
120  
IA  
TC = 25°C  
TC = 25°C  
19  
2
A
J
Either Source terminal S can be used as the  
Source terminal or the Kelvin Source (gate  
return) terminal.  
EAS  
dV/dt  
PD  
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C  
TC = 25°C  
20  
V/ns  
W
1000  
Features  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
z International Standard Package  
z Encapsulating Epoxy meets  
UL94V-0, Flammability Classification  
z miniBLOCwith Aluminium Nitride  
Isolation  
TJM  
Tstg  
-55 ... +150  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062 in.) from Case for 10  
300  
260  
°C  
°C  
z Fast Recovery Diode  
VISOL  
50/60Hz  
IISOL ≤ 1mA  
t = 1min  
t = 1s  
2500  
3000  
V~  
V~  
z Avalanche Rated  
z Low package inductance  
Md  
Mounting Torque  
Terminal Connection Torque (M4)  
1.5/13  
1.3/11.5  
Nm/lb.in.  
Nm/lb.in.  
Advantages  
Weight  
30  
g
z
Easy to Mount  
Space Savings  
High Power Density  
z
z
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min. Typ.  
1000  
3.5  
Max.  
Applications  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 3mA  
VDS = VGS, ID = 1mA  
VGS = ± 30V, VDS = 0V  
VDS = VDSS, VGS = 0V  
V
V
z Switched-Mode and Resonant-Mode  
Power Supplies  
6.5  
z DC-DC Converters  
z Laser Drivers  
± 300 nA  
50 μA  
IDSS  
z AC and DC Motor Drives  
z Robotics and Servo Controls  
TJ = 125°C  
4
mA  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
210 mΩ  
DS99866B(7/09)  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXFN38N100P  
Symbol  
Test Conditions  
Characteristic Values  
SOT-227B Outline  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 20V, ID = 0.5 • ID25, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
18  
29  
S
Ciss  
Coss  
Crss  
24  
1245  
80  
nF  
pF  
pF  
RGi  
Gate Input Resistance  
0.78  
Ω
td(on)  
tr  
td(off)  
tf  
74  
55  
71  
40  
ns  
ns  
ns  
ns  
Resistive Switching Times  
V
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG= 1Ω (External)  
Qg(on)  
Qgs  
350  
150  
150  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
RthJC  
RthCS  
0.125 °C/W  
°C/W  
0.05  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
IS  
VGS = 0V  
38  
A
A
V
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
150  
1.5  
trr  
300  
ns  
μC  
A
IF = 25A, -di/dt = 100A/μs  
QRM  
IRM  
2.5  
VR = 100V  
17  
Note 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXFN38N100P  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
40  
35  
30  
25  
20  
15  
10  
5
VGS = 15V  
11V  
VGS = 15V  
11V  
10V  
10V  
9V  
9V  
8V  
7V  
8V  
0
0
1
2
3
4
5
6
7
8
0
5
10  
15  
VDS - Volts  
20  
25  
30  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 19A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics  
@ 125ºC  
40  
35  
30  
25  
20  
15  
10  
5
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
VGS = 15V  
10V  
VGS = 10V  
9V  
8V  
I D = 38A  
I D = 19A  
7V  
6V  
0
0
2
4
6
8
10  
12  
14  
16  
18  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 19A Value vs. Drain  
Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
40  
35  
30  
25  
20  
15  
10  
5
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
VGS = 10V  
15V  
- - - -  
TJ = 125ºC  
TJ = 25ºC  
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
TC - Degrees Centigrade  
ID - Amperes  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXYS REF: F_38N100P(99)7-14-09-D  
IXFN38N100P  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
65  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
60  
50  
40  
30  
20  
10  
0
TJ = - 40ºC  
TJ = 125ºC  
25ºC  
- 40ºC  
25ºC  
125ºC  
0
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
8.5  
9.0  
9.5  
10.0  
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
16  
14  
12  
10  
8
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
VDS = 500V  
I
D = 19A  
I G = 10mA  
6
TJ = 125ºC  
4
TJ = 25ºC  
2
0
0
50  
100  
150  
200  
250  
300  
350  
400  
450  
500  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
1.2  
1.3  
VSD - Volts  
QG - NanoCoulombs  
Fig. 11. Capacitance  
Fig. 12. Forward-Bias Safe Operating Area  
100,000  
1,000.0  
100.0  
10.0  
1.0  
RDS(on) Limit  
100µs  
25µs  
1ms  
10ms  
C
iss  
10,000  
1,000  
100  
100ms  
DC  
C
oss  
TJ = 150ºC  
TC = 25ºC  
C
rss  
Single Pulse  
f
= 1 MHz  
5
10  
0.1  
0
10  
15  
20  
25  
30  
35  
40  
10  
100  
VDS - Volts  
1,000  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXFN38N100P  
Fig. 13. Maximum Transient Thermal Impedance  
1.000  
0.100  
0.010  
0.001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXYS REF: F_38N100P(99)7-14-09-D  
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