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IXFN32N80P

型号：

IXFN32N80P

描述：

PolarHV HiPerFET功率MOSFET[ PolarHV HiPerFET Power MOSFET ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

4 页

PDF大小：

92 K

下载PDF手册
PolarHVTM HiPerFET  
Power MOSFET  
IXFN32N80P  
VDSS = 800 V  
ID25 = 25 A  
RDS(on) ≤ 270 mΩ  
trr  
≤ 250 ns  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Diode  
Symbol  
Test Conditions  
Maximum Ratings  
miniBLOC, SOT-227 B (IXFN)  
E153432  
VDSS  
VDGR  
TJ = 25°C to 150°C  
800  
800  
V
V
S
G
TJ = 25°C to 150°C; RGS = 1 MΩ  
VGSS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
S
ID25  
IDM  
TC = 25°C  
TC = 25°C, pulse width limited by TJM  
29  
250  
A
A
D
IAR  
TC = 25°C  
30  
A
G = Gate  
D = Drain  
S = Source  
EAR  
EAS  
TC = 25°C  
TC = 25°C  
100  
5
mJ  
J
Either Source terminal S can be used as the  
Source terminal or the Kelvin Source (gate  
return) terminal.  
dv/dt  
PD  
IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS  
TJ ≤ 150°C, RG = 2 Ω  
,
10  
V/ns  
TC = 25°C  
625  
W
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
Features  
• International standard package  
• Encapsulating epoxy meets  
UL94V-0, flammability classification  
• miniBLOC with Aluminium nitride  
isolation  
TL  
1.6 mm (0.062 in.) from case for 10 s  
300  
2500  
3000  
°C  
V~  
V~  
VISOL  
50/60 Hz, RMS  
t = 1 min  
IISOL ≤ 1 mA  
t = 1 s  
l
Md  
Mounting torque  
Terminal connection torque  
1.5 / 13 Nm/lb.in.  
1.5 / 13 Nm/lb.in.  
Fast recovery diode  
l
Unclamped Inductive Switching (UIS)  
rated  
Weight  
30  
g
l
Low package inductance  
- easy to drive and to protect  
Symbol  
Test Conditions  
Characteristic Values  
Advantages  
(TJ = 25°C, unless otherwise specified)  
Min. Typ.  
Max.  
l
Easy to mount  
Space savings  
High power density  
BVDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 3 mA  
VDS = VGS, ID = 8 mA  
VGS = 30 V, VDS = 0 V  
800  
V
V
l
l
3.0  
5.0  
200  
nA  
IDSS  
VDS = VDSS  
VGS = 0 V  
25  
2
μA  
mA  
TJ = 125°C  
RDS(on)  
VGS = 10 V, ID = 16A, Note 1  
270 mΩ  
DS99605E(08/06)  
© 2006 IXYS All rights reserved  
IXFN32N80P  
Symbol  
gfs  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ. Max.  
SOT-227B Outline  
VDS = 20 V; ID = 16A, Note 1  
20  
38  
S
Ciss  
Coss  
Crss  
8820  
660  
22  
nF  
pF  
pF  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
td(on)  
tr  
td(off)  
tf  
30  
29  
85  
26  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 VDSS, ID = 16A  
RG = 2 Ω (External)  
Qg(on)  
Qgs  
150  
39  
nC  
nC  
nC  
VGS = 10 V, VDS = 0.5 VDSS, ID = 16 A  
Qgd  
44  
RthJC  
RthCS  
0.2 °C/W  
°C/W  
0.05  
Source-Drain Diode  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ. Max.  
Symbol  
Test Conditions  
IS  
VGS = 0 V  
60  
150  
1.5  
A
ISM  
VSD  
trr  
Repetitive  
A
V
IF = IS, VGS = 0 V, Note 1  
IF = 25A, -di/dt = 100 A/μs  
250  
ns  
QRM  
IRM  
VR = 100V  
0.8  
8.0  
μC  
A
Notes:  
1. Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844  
one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,727,585  
7,005,734 B2  
7,063,975 B2  
6,534,343  
6,583,505  
6,710,405 B2 6,759,692  
6,710,463  
6,771,478 B2 7,071,537  
IXFN32N80P  
Fig. 1. Output Characteristics  
Fig. 2. Extended Output Characteristics  
@ 25  
º
C
@ 25 C  
º
35  
30  
25  
20  
15  
10  
5
70  
60  
50  
40  
30  
20  
10  
0
V
= 10V  
7V  
V
= 10V  
6V  
GS  
GS  
6V  
5V  
5V  
4V  
4V  
0
0
1
2
3
4
5
6
7
8
9
10  
0
5
10  
15  
20  
25  
30  
VD S - Volts  
VD S - Volts  
Fig. 3. Output Characteristics  
@ 125  
Fig. 4. RDS(on Norm alized to ID = 16A  
)
º
C
Value vs. Junction Tem perature  
35  
30  
25  
20  
15  
10  
5
3.1  
2.8  
2.5  
2.2  
1.9  
1.6  
1.3  
1.0  
0.7  
0.4  
V
= 10V  
6V  
GS  
V
= 10V  
GS  
5V  
I
= 32A  
D
I
= 16A  
D
4V  
18  
0
0
3
6
9
12  
15  
21  
24  
-50  
-25  
0
25  
50  
75  
100 125 150  
VD S - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Norm alized to  
ID = 16A Value vs. Drain Current  
Fig. 6. Drain Current vs. Case  
Tem perature  
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
30  
27  
24  
21  
18  
15  
12  
9
V
= 10V  
GS  
T = 125 C  
º
J
6
T = 25 C  
º
J
3
0
-50  
-25  
0
25  
50  
75  
100 125 150  
0
10  
20  
30  
40  
50  
60  
70  
I D - Amperes  
TC - Degrees Centigrade  
© 2006 IXYS All rights reserved  
IXFN32N80P  
Fig. 8. Transconductance  
Fig. 7. Input Adm ittance  
45  
40  
35  
30  
25  
20  
15  
10  
5
70  
60  
50  
40  
30  
20  
10  
0
T
J
= 125  
º
C
C
C
25  
º
º
-40  
T
J
= -40 C  
º
25  
125  
º
C
º
C
0
0
5
10  
15  
20  
25  
30  
35  
40  
45  
3
3.5  
4
4.5  
5
VG S - Volts  
I D - Amperes  
Fig. 9. Source Current vs.  
Source-To-Drain Voltage  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
V
= 400V  
DS  
I
I
= 16A  
D
G
= 10mA  
T = 125 C  
º
J
T = 25 C  
º
J
0.3 0.4 0.5 0.6 0.7 0.8 0.9  
1
1.1 1.2  
0
20  
40  
60  
80  
100 120 140 160  
VS D - Volts  
Q G - nanoCoulombs  
Fig. 12. Maxim um Transient Therm al  
Resistance  
Fig. 11. Capacitance  
100000  
10000  
1000  
100  
1.00  
f = 1MHz  
C
C
iss  
0.10  
0.01  
0.00  
oss  
C
rs  
10  
0.0001  
0.001  
0.01  
0.1  
1
10  
0
5
10  
15  
20  
25  
30  
35  
40  
VD S - Volts  
Pulse Width - Seconds  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS REF: F_32N80P (9J) 8-23-06-D  
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