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IXFN32N120P

型号：

IXFN32N120P

描述：

极地HiPerFET功率MOSFET[ Polar HiPerFET Power MOSFET ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

119 K

下载PDF手册
PolarTM HiPerFETTM  
Power MOSFET  
VDSS = 1200V  
ID25 = 32A  
IXFN32N120P  
RDS(on) ≤ 310mΩ  
N-Channel Enhancement Mode  
Avalanche Rated  
trr  
≤ 300ns  
Fast Intrinsic Diode  
miniBLOC  
E153432  
Symbol  
Test Conditions  
Maximum Ratings  
S
G
VDSS  
VDGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1MΩ  
1200  
1200  
V
V
VGSS  
VGSM  
Continuous  
Transient  
±30  
±40  
V
V
S
ID25  
IDM  
TC = 25°C  
TC = 25°C, Pulse Width Limited by TJM  
32  
100  
A
A
D
IA  
TC = 25°C  
TC = 25°C  
16  
2
A
J
G = Gate  
S = Source  
D = Drain  
EAS  
Either Source Terminal S can be used as  
the Source Terminal or the Kelvin Source  
( Gate Return ) Terminal.  
dv/dt  
PD  
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C  
TC = 25°C  
20  
V/ns  
W
1000  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
Features  
z International Standard Package  
z miniBLOC, with Aluminium Nitride  
Isolation  
TL  
TSOLD  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10s  
300  
260  
°C  
°C  
z Isolation Voltage 2500 V~  
z High Current Handling Capability  
z Fast Intrinsic Diode  
VISOL  
50/60 Hz, RMS  
IISOL ≤ 1mA  
t = 1 minute  
t = 1 second  
2500  
3000  
V~  
V~  
z Avalanche Rated  
Md  
Mounting Torque  
Terminal Connection Torque  
1.5/13  
1.3/11.5  
Nm/lb.in.  
Nm/lb.in.  
z
Low RDS(on) HDMOSTM Process  
Weight  
30  
g
Advantages  
z
Easy to Mount  
Space Savings  
High Power Density  
z
Symbol  
Test Conditions  
Characteristic Values  
Min. Typ. Max.  
z
(TJ = 25°C, Unless Otherwise Specified)  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 3mA  
VDS = VGS, ID = 1mA  
VGS = ±30V, VDS = 0V  
VDS = VDSS, VGS = 0V  
1200  
3.5  
V
V
Applications  
6.5  
z High Voltage Switch-Mode and  
Resonant-ModePower Supplies  
z High Voltage Pulse Power  
Applications  
z High Voltage Discharge Circuits in  
Lasers Pulsers, Spark Igniters, RF  
Generators  
z High Voltage DC-DC Converters  
z High Voltage DC-AC Inverters  
±300 nA  
50 μA  
IDSS  
TJ = 125°C  
5
mA  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
310 mΩ  
DS99718H(03/10)  
© 2010 IXYS Corporation, All Rights Reserved  
IXFN32N120P  
Symbol  
Test Conditions  
Characteristic Values  
SOT-227B (IXFN) Outline  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ. Max.  
gfs  
VDS = 20V, ID = 0.5 • ID25, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
Gate input resistance  
17  
28  
21  
S
Ciss  
Coss  
Crss  
nF  
pF  
pF  
1100  
77  
RGi  
0.84  
Ω
td(on)  
tr  
td(off)  
tf  
70  
62  
88  
58  
ns  
ns  
ns  
ns  
Resistive Switching Times  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 1Ω (External)  
(M4 screws (4x) supplied)  
Qg(on)  
Qgs  
360  
130  
160  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
RthJC  
RthCS  
0.125 °C/W  
°C/W  
0.05  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ. Max.  
IS  
VGS = 0V  
32  
128  
1.5  
A
A
ISM  
VSD  
trr  
Repetitive, Pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
V
300  
ns  
IF = 20A, -di/dt = 100A/μs  
QRM  
IRM  
1.9  
15  
μC  
A
VR= 100V, VGS = 0V  
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,727,585  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,534,343  
6,583,505  
6,710,405 B2 6,759,692  
6,710,463  
6,771,478 B2 7,071,537  
IXFN32N120P  
Fig. 1. Output Characteristics @ TJ = 25ºC  
J
Fig. 2. Extended Output Characteristics @ T = 25ºC  
70  
60  
50  
40  
30  
20  
10  
0
32  
28  
24  
20  
16  
12  
8
VGS = 10V  
9V  
VGS = 10V  
9V  
8V  
8V  
7V  
4
7V  
0
0
1
2
3
4
5
6
7
8
9
10  
0
5
10  
15  
20  
25  
30  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 16A Value  
vs. Junction Temperature  
J
Fig. 3. Output Characteristics T = 125ºC  
32  
28  
24  
20  
16  
12  
8
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
VGS = 10V  
8V  
VGS = 10V  
I D = 32A  
7V  
6V  
I D = 16A  
4
0
0
2
4
6
8
10  
12  
14  
16  
18  
20  
22  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 16A Value  
vs. Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
35  
30  
25  
20  
15  
10  
5
VGS = 10V  
TJ = 125ºC  
TJ = 25ºC  
0
0
10  
20  
30  
40  
50  
60  
70  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
TC - Degrees Centigrade  
ID - Amperes  
© 2010 IXYS Corporation, All Rights Reserved  
IXFN32N120P  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
70  
60  
50  
40  
30  
20  
10  
0
TJ = - 40ºC  
25ºC  
TJ = 125ºC  
25ºC  
- 40ºC  
125ºC  
0
0
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
5.0  
0.3  
0
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
8.5  
9.0  
1.2  
40  
VGS - Volts  
ID - Amperes  
Fig. 10. Gate Charge  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
16  
14  
12  
10  
8
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
VDS = 600V  
I
I
D = 16A  
G = 10mA  
TJ = 125ºC  
6
TJ = 25ºC  
4
2
0
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
0
50  
100  
150  
200  
250  
300  
350  
400  
450  
500  
VSD - Volts  
QG - NanoCoulombs  
Fig. 11. Capacitance  
Fig. 12. Forward-Bias Safe Operating Area  
100,000  
10,000  
1,000  
100  
1000  
100  
10  
RDS(on) Limit  
C
iss  
25µs  
100µs  
1ms  
C
C
oss  
1
10ms  
100ms  
TJ = 150ºC  
0.1  
0.01  
DC  
Tc = 25ºC  
Single Pulse  
rss  
f = 1 MHz  
10  
5
10  
15  
20  
25  
30  
35  
10  
100  
1,000  
10,000  
VDS - Volts  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXFN32N120P  
Fig. 13. Maximum Transient Thermal Impedance  
0.300  
0.100  
0.010  
0.001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2010 IXYS Corporation, All Rights Reserved  
IXYS REF: F_32N120P(99) 3-04-10-D  
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