IXFN230N10
Symbol
Test Conditions
Characteristic Values
miniBLOC, SOT-227 B
(TJ = 25°C, unless otherwise specified)
Min.
Typ.
Max.
gfs
VDS = 10V, ID = 60A, Note 1
60
97
S
Ciss
Coss
Crss
19
5600
2750
nF
pF
pF
VGS = 0V, VDS = 25V, f = 1MHz
td(on)
tr
td(off)
tf
40
150
112
60
ns
ns
ns
ns
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 1Ω (External)
M4 screws (4x) supplied
Qg(on)
Qgs
Qgd
570
70
nC
nC
nC
Dim.
Millimeter
Inches
Min.
Min.
Max.
Max.
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
A
B
31.50
7.80
31.88
8.20
1.240
0.307
1.255
0.323
290
C
D
4.09
4.09
4.29
4.29
0.161
0.161
0.169
0.169
RthJC
RthCS
0.18 °C/W
°C/W
E
F
4.09
4.29
0.161
0.587
0.169
0.595
14.91
15.11
0.05
G
H
30.12
38.00
30.30
38.23
1.186
1.496
1.193
1.505
J
K
11.68
8.92
12.22
9.60
0.460
0.351
0.481
0.378
L
M
0.76
12.60
0.84
12.85
0.030
0.496
0.033
0.506
N
O
25.15
1.98
25.42
2.13
0.990
0.078
1.001
0.084
Source-Drain Diode
P
Q
4.95
26.54
5.97
26.90
0.195
1.045
0.235
1.059
Symbol
Test Conditions
Characteristic Values
R
S
3.94
4.72
4.42
4.85
0.155
0.186
0.174
0.191
(TJ = 25°C, unless otherwise specified)
Min.
Typ.
Max.
230
920
1.2
T
U
24.59
-0.05
25.07
0.1
0.968
-0.002
0.987
0.004
IS
VGS = 0V
A
A
V
ISM
VSD
Repetitive, pulse width limited by TJM
IF = 100A, VGS = 0V, Note 1
trr
250
ns
μC
A
IF = 50A, -di/dt = 100A/μs, VR = 50V
QRM
IRM
1.2
9.0
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
