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IXFN170N30P

型号：

IXFN170N30P

描述：

Polar功率MOSFET HiperFET[ Polar Power MOSFET HiPerFET ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

118 K

下载PDF手册
Preliminary Technical Information  
PolarTM Power MOSFET  
VDSS = 300V  
ID25 = 138A  
RDS(on) ≤ 18mΩ  
≤ 200ns  
IXFN170N30P  
HiPerFETTM  
N-Channel Enhancement Mode  
Avalanche Rated  
trr  
Fast Intrinsic Diode  
miniBLOC, SOT-227 B  
E153432  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 150°C  
300  
300  
V
V
S
G
VDGR  
TJ = 25°C to 150°C, RGS = 1MΩ  
VGSS  
VGSM  
Continuous  
Transient  
±20  
V
V
± 30  
S
D
ID25  
ILRMS  
IDM  
TC = 25°C  
External lead current limit  
TC = 25°C, pulse width limited by TJM  
138  
100  
500  
A
A
A
G = Gate  
S = Source  
D = Drain  
IA  
TC = 25°C  
TC = 25°C  
85  
5
A
J
Either Source terminal at miniBLOC can be used  
as Main or Kelvin Source  
EAS  
dV/dt  
PD  
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C  
TC = 25°C  
20  
V/ns  
W
890  
Features  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
• Fast intrinsic diode  
• Avalanche Rated  
• Unclamped Inductive Switching (UIS)  
rated  
TJM  
Tstg  
-55 ... +150  
TL  
1.6mm (0.062 in.) from case for 10s  
300  
°C  
• Very low Rth results high power  
dissipation  
• Low RDS(ON) and QG  
• Low package inductance  
VISOL  
50/60 Hz, RMS  
t = 1min  
2500  
3000  
V~  
V~  
IISOL ≤ 1mA  
t = 1s  
Md  
Mounting torque  
Terminal connection torque  
1.5/13  
1.3/11.5  
Nm/lb.in.  
Nm/lb.in.  
Advantages  
• Low gate charge results in simple  
drive requirement  
Weight  
30  
g
• Improved Gate, Avalanche and  
dynamic dv/dt ruggedness  
• High power density  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ.  
Max.  
Applications  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 3mA  
VDS = VGS, ID = 1mA  
VGS = ±20V, VDS = 0V  
300  
V
V
• DC-DC coverters  
• Battery chargers  
• Switched-mode and resonant-mode  
power supplies  
• DC choppers  
• AC and DC motor control  
• Uninterrupted power supplies  
• High speed power switching  
applications  
2.5  
4.5  
±200  
25  
nA  
IDSS  
VDS = VDSS  
VGS = 0V  
μA  
1.5 mA  
TJ = 125°C  
RDS(on)  
VGS = 10V, ID = 85A, Note 1  
18 mΩ  
DS100001(06/08)  
© 2008 IXYS CORPORATION, All rights reserved  
IXFN170N30P  
Symbol  
Test Conditions  
Characteristic Values  
SOT-227B Outline  
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 10V, ID = 60A, Note 1  
57  
95  
S
Ciss  
Coss  
Crss  
td(on)  
tr  
20  
2450  
27  
nF  
pF  
pF  
ns  
ns  
ns  
ns  
VGS = 0V, VDS = 25V, f = 1MHz  
41  
Resistive Switching Times  
VGS = 10V, VDS = 0.5 • VDSS, ID = 85A  
RG = 1Ω (External)  
29  
td(off)  
tf  
79  
16  
Qg(on)  
Qgs  
258  
82  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 85A  
Qgd  
78  
RthJC  
RthCS  
0.14 °C/W  
°C/W  
0.05  
Source-Drain Diode  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Symbol  
IS  
Test Conditions  
Min.  
Typ.  
Max.  
VGS = 0V  
170  
A
A
V
ISM  
Repetitive, pulse width limited by TJM  
IF = 85A, VGS = 0V, Note 1  
500  
1.3  
VSD  
trr  
QRM  
IRM  
200  
ns  
μC  
A
IF = 85A, -di/dt = 150A/μs  
1.85  
21  
VR = 100V  
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.  
PRELIMINARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from data gathered during objective characterizations of preliminary engineering lots; but also may yet  
contain some information supplied during a pre-production design evaluation. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXFN170N30P  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
180  
160  
140  
120  
100  
80  
300  
250  
200  
150  
100  
50  
VGS = 10V  
8V  
VGS = 10V  
8V  
7V  
7V  
6V  
6V  
5V  
60  
40  
5V  
20  
0
0
0.0  
0.4  
0.8  
1.2  
1.6  
2.0  
2.4  
2.8  
3.2  
0
2
4
6
8
10  
12  
14  
16  
18  
20  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 85A Value  
vs. Junction Temperature  
Fig. 3. Output Characteristics  
@ 125ºC  
180  
160  
140  
120  
100  
80  
3.2  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
VGS = 10V  
8V  
VGS = 10V  
7V  
6V  
I D = 170A  
I D = 85A  
60  
40  
5V  
20  
0
0
1
2
3
4
5
6
7
-50  
-25  
0
25  
50  
75  
100  
125  
150  
TJ - Degrees Centigrade  
VDS - Volts  
Fig. 5. RDS(on) Normalized to ID = 85A Value  
vs. Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
120  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
External Lead Current Limit  
VGS = 10V  
TJ = 125ºC  
TJ = 25ºC  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0
50  
100  
150  
200  
250  
300  
TC - Degrees Centigrade  
ID - Amperes  
© 2008 IXYS CORPORATION, All rights reserved  
IXFN170N30P  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
180  
160  
140  
120  
100  
80  
200  
180  
160  
140  
120  
100  
80  
TJ = - 40ºC  
25ºC  
TJ = 125ºC  
25ºC  
- 40ºC  
125ºC  
60  
60  
40  
40  
20  
20  
0
0
0
20  
40  
60  
80  
100 120 140 160 180 200  
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
350  
300  
250  
200  
150  
100  
50  
VDS = 150V  
I D = 85A  
I G = 10mA  
TJ = 125ºC  
TJ = 25ºC  
0
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4  
VSD - Volts  
0
40  
80  
120  
160  
200  
240  
280  
QG - NanoCoulombs  
Fig. 12. Forward-Bias Safe Operating Area  
Fig. 11. Capacitance  
100,000  
10,000  
1,000  
100  
1,000.0  
RDS(on) Limit  
C
iss  
25µs  
100.0  
10.0  
1.0  
100µs  
C
oss  
1ms  
TJ = 150ºC  
C = 25ºC  
Single Pulse  
C
10ms  
rss  
T
f
= 1 MHz  
5
DC  
100ms  
10  
0.1  
0
10  
15  
20  
25  
30  
35  
40  
10  
100  
1000  
VDS - Volts  
IXYS reserves the right to change limits, test conditions, and dimensions.  
VDS - Volts  
IXYS REF: F_170N30P(9S) 06-24-08  
IXFN170N30P  
Fig. 12. Maximum Transient Thermal Impedance  
1.000  
0.100  
0.010  
0.001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2008 IXYS CORPORATION, All rights reserved  
IXYS REF: F_170N30P(9S) 06-24-08  
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