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IXFL38N100P

型号：

IXFL38N100P

描述：

Polar功率MOSFET HiperFET[ Polar Power MOSFET HiPerFET ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

127 K

下载PDF手册
Preliminary Technical Information  
PolarTM Power MOSFET  
VDSS = 1000V  
ID25 = 29A  
RDS(on) ≤ 230mΩ  
≤ 300ns  
IXFL38N100P  
HiPerFETTM  
( Electrically Isolated Tab)  
trr  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Diode  
ISOPLUS i5-PakTM (HV)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 150°C  
1000  
1000  
V
V
VDGR  
TJ = 25°C to 150°C, RGS = 1MΩ  
G
S
VGSS  
VGSM  
Continuous  
Transient  
± 30  
± 40  
V
V
D
ISOLATED TAB  
D = Drain  
ID25  
IDM  
TC = 25°C  
29  
A
A
G = Gate  
S = Source  
TC = 25°C, Pulse Width Limited by TJM  
120  
IA  
TC = 25°C  
TC = 25°C  
19  
2
A
J
Features  
EAS  
z Silicon Chip on Direct-Copper-Bond  
Substrate  
dV/dt  
PD  
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C  
TC = 25°C  
15  
V/ns  
W
520  
- High Power Dissipation  
- Isolated Mounting Surface  
- 2500V Electrical Isolation  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
z International Standard Packages  
z miniBLOC, with Aluminium Nitride  
Isolation  
TJM  
Tstg  
-55 ... +150  
z Low Drain to Tab Capacitance(<30pF)  
TL  
Maximum Lead Temperature for Soldering  
Plastic Body for 10s  
300  
260  
°C  
°C  
z Rugged Polysilicon Gate Cell  
Structure  
TSOLD  
VISOL  
50/60 Hz, RMS, 1 minute  
2500  
3000  
V~  
V~  
z Avalanche Rated  
IISOL ≤ 1mA  
t = 1s  
z Fast Intrinsic Diode  
FC  
Mounting Force  
40..120/4.5..27  
8
N/lb.  
g
Weight  
Advantages  
z
Easy Assembly  
Space Savings  
High Power Density  
z
z
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
1000  
3.5  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 3mA  
VDS = VGS, ID = 1mA  
VGS = ± 30V, VDS = 0V  
VDS = VDSS , VGS = 0V  
V
V
Applications  
6.5  
z
Switched-Mode and Resonant-Mode  
± 300 nA  
50 μA  
Power Supplies  
DC-DC Converters  
z
IDSS  
z
Laser Drivers  
TJ = 125°C  
4
mA  
z AC and DC Motor Drives  
z Robotics and Servo Controls  
RDS(on)  
VGS = 10V, ID = 19A, Note 1  
230 mΩ  
DS99755B(7/09)  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXFL38N100P  
ISOPLUS i5-PakTM HV (IXFL) Outline  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 20V, ID = 19A, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
Gate input resistance  
18  
29  
S
Ciss  
Coss  
Crss  
24  
1245  
80  
nF  
pF  
pF  
RGi  
0.78  
Ω
td(on)  
tr  
td(off)  
tf  
74  
55  
71  
40  
ns  
ns  
ns  
ns  
Resistive Switching Times  
VGS = 10V, VDS = 0.5 • VDSS, ID = 19A  
RG = 1Ω (External)  
PIN 1 = Gate  
PIN 2 = Source  
PIN 3 = Drain  
Tap 4 = Electricall isolated 2500V  
SYM  
INCHES  
MIN  
MILLIMETER  
MAX  
MIN  
MAX  
Qg(on)  
Qgs  
350  
150  
150  
nC  
nC  
nC  
A
0.190  
0.205  
0.118  
0.055  
0.055  
0.072  
0.068  
0.029  
1.040  
0.799  
4.83  
2.59  
5.21  
3.00  
1.40  
1.40  
1.83  
1.73  
0.74  
26.42  
20.29  
VGS = 10V, VDS = 0.5 • VDSS, ID = 19A  
A1  
A2  
b
0.102  
0.046  
1.17  
Qgd  
0.045  
1.14  
b1  
b2  
c
0.063  
1.60  
RthJC  
RthCS  
0.24 °C/W  
°C/W  
0.058  
1.47  
0.15  
0.020  
0.51  
D
1.020  
25.91  
19.56  
3.81 BSC  
E
0.770  
e
0.150 BSC  
Source-Drain Diode  
TJ = 25°C Unless Otherwise Specified)  
Characteristic Values  
e1  
L
0.450 BSC  
0.780  
11.43 BSC  
19.81  
0.820  
0.102  
0.235  
0.513  
0.180  
0.130  
0.690  
0.821  
20.83  
2.59  
Min.  
Typ.  
Max.  
L1  
Q
0.080  
0.210  
0.490  
0.150  
0.100  
0.668  
0.801  
2.03  
5.33  
5.97  
IS  
VGS = 0V  
38  
A
A
V
Q1  
R
12.45  
3.81  
13.03  
4.57  
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
150  
1.5  
R1  
S
2.54  
3.30  
16.97  
20.34  
17.53  
20.85  
T
trr  
300 ns  
U
0.065  
0.080  
1.65  
2.03  
IF = 25A, -di/dt = 100A/μs  
QRM  
IRM  
2.5  
μC  
VR = 100V, VGS = 0V  
17  
A
Note 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.  
PRELIMINARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from data gathered during objective characterizations of preliminary engineering lots; but also may yet  
contain some information supplied during a pre-production design evaluation. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXFL38N100P  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
40  
35  
30  
25  
20  
15  
10  
5
VGS = 15V  
11V  
VGS = 15V  
11V  
10V  
10V  
9V  
9V  
8V  
7V  
8V  
0
0
0
0
1
2
3
4
5
6
7
8
0
5
10  
15  
VDS - Volts  
20  
25  
30  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 19A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics  
@ 125ºC  
40  
35  
30  
25  
20  
15  
10  
5
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
VGS = 15V  
10V  
VGS = 10V  
9V  
8V  
I D = 38A  
I D = 19A  
7V  
6V  
0
2
4
6
8
10  
12  
14  
16  
18  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 19A Value vs. Drain  
Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
32  
28  
24  
20  
16  
12  
8
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
VGS = 10V  
15V  
- - - -  
TJ = 125ºC  
TJ = 25ºC  
4
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
ID - Amperes  
TC - Degrees Centigrade  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXFL38N100P  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
60  
50  
40  
30  
20  
10  
0
65  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
TJ = - 40ºC  
TJ = 125ºC  
25ºC  
- 40ºC  
25ºC  
125ºC  
0
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
8.5  
9.0  
9.5  
10.0  
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
16  
14  
12  
10  
8
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
VDS = 500V  
I D = 19A  
I G = 10mA  
6
TJ = 125ºC  
4
TJ = 25ºC  
2
0
0
50  
100  
150  
200  
250  
300  
350  
400  
450  
500  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
1.2  
1.3  
VSD - Volts  
QG - NanoCoulombs  
Fig. 12. Forward-Bias Safe Operating Area  
Fig. 11. Capacitance  
1,000.00  
100.00  
10.00  
1.00  
100,000  
RDS(on) Limit  
1ms  
100µs  
25µs  
10ms  
100ms  
C
iss  
10,000  
1,000  
100  
DC  
C
oss  
TJ = 150ºC  
0.10  
C
TC = 25ºC  
rss  
Single Pulse  
= 1 MHz  
5
f
10  
0.01  
0
10  
15  
20  
25  
30  
35  
40  
10  
100  
VDS - Volts  
1,000  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXFL38N100P  
Fig. 13. Maximum Transient Thermal Impedance  
1.000  
0.100  
0.010  
0.001  
0.0001  
0.001  
0.01  
0.1  
1
10  
100  
Pulse Width - Seconds  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXYS REF: F_38N100(99)7-14-09-D  
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