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IXFK30N110P

型号：

IXFK30N110P

描述：

Polar功率MOSFET HiperFET[ Polar Power MOSFET HiPerFET ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

4 页

PDF大小：

115 K

下载PDF手册
PolarTM Power MOSFET  
HiPerFETTM  
VDSS = 1100V  
ID25 = 30A  
IXFK30N110P  
IXFX30N110P  
RDS(on) ≤ 360mΩ  
trr  
≤ 300ns  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Diode  
TO-264 (IXFK)  
Symbol  
Test Conditions  
Maximum Ratings  
VDSS  
VDGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1MΩ  
1100  
1100  
V
V
G
D
S
(TAB)  
VGSS  
VGSM  
Continuous  
Transient  
± 30  
± 40  
V
V
PLUS247 (IXFX)  
ID25  
IDM  
TC = 25°C  
TC = 25°C, pulse width limited by TJM  
30  
75  
A
A
IAR  
EAS  
TC = 25°C  
TC = 25°C  
15  
1.5  
A
J
(TAB)  
dV/dt  
PD  
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C  
TC = 25°C  
15  
V/ns  
W
960  
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
Features  
TL  
TSOLD  
1.6 mm (0.062 in.) from case for 10s  
Plastic body for 10s  
300  
260  
°C  
°C  
z Fast intrinsic diode  
z International standard packages  
z Unclamped Inductive Switching (UIS)  
rated  
Md  
FC  
Mounting torque  
Mounting force  
(IXFK)  
(IXFX)  
1.13/10  
Nm/lb.in.  
N/lb  
20..120 /4.5..27  
z Low package inductance  
- easy to drive and to protect  
Weight  
(IXFK)  
(IXFX)  
10  
6
g
g
Advantages  
z
Easy to mount  
Space savings  
High power density  
z
z
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C unless otherwise specified)  
Min.  
Typ.  
Max.  
Applications:  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 3mA  
VDS = VGS, ID = 1mA  
VGS = ± 30V, VDS = 0V  
1100  
V
V
z High Voltage Switched-mode and  
resonant-mode power supplies  
z High Voltage Pulse Power Applications  
z High Voltage Discharge circuits in  
Lasers Pulsers, Spark Igniters, RF  
Generators  
3.5  
6.5  
± 200 nA  
50 μA  
IDSS  
VDS = VDSS  
VGS = 0V  
TJ = 125°C  
2.5 mA  
z High Voltage DC-DC converters  
z High Voltage DC-AC inverters  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
360 mΩ  
DS99855B(04/08)  
© 2008 IXYS CORPORATION, All rights reserved  
IXFK30N110P  
IXFX30N110P  
Symbol  
Test Conditions  
Characteristic Values  
TO-264 (IXFK) Outline  
(TJ = 25°C unless otherwise specified)  
Min.  
Typ.  
Max.  
gfs  
VDS= 20V, ID = 0.5 • ID25, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
Gate Input Resistance  
15  
25  
S
Ciss  
Coss  
Crss  
13.6  
795  
70  
nF  
pF  
pF  
RGI  
1.50  
Ω
td(on)  
tr  
td(off)  
tf  
Resistive Switching Times  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 1Ω (External)  
50  
48  
83  
52  
ns  
ns  
ns  
ns  
Millimeter  
Inches  
Dim.  
Min.  
Max.  
Min.  
Max.  
A
A1  
A2  
4.82  
2.54  
2.00  
5.13  
2.89  
2.10  
.190  
.100  
.079  
.202  
.114  
.083  
Qg(on)  
Qgs  
235  
102  
79  
nC  
nC  
nC  
b
b1  
b2  
1.12  
2.39  
2.90  
1.42  
2.69  
3.09  
.044  
.094  
.114  
.056  
.106  
.122  
VGS= 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
c
0.53  
0.83  
.021  
1.020  
.780  
.033  
1.030  
.786  
Qgd  
D
25.91 26.16  
E
e
J
19.81 19.96  
5.46 BSC  
RthJC  
RthCS  
0.13 °C/W  
°C/W  
.215 BSC  
0.00  
0.00  
0.25  
0.25  
.000  
.000  
.010  
.010  
0.15  
K
L
L1  
20.32 20.83  
.800  
.090  
.820  
.102  
2.29  
2.59  
P
3.17  
3.66  
.125  
.144  
Q
Q1  
6.07  
8.38  
6.27  
8.69  
.239  
.330  
.247  
.342  
Source-Drain Diode  
Characteristic Values  
(TJ = 25°C unless otherwise specified)  
R
R1  
S
3.81  
1.78  
6.04  
4.32  
2.29  
6.30  
.150  
.070  
.238  
.170  
.090  
.248  
Symbol  
IS  
Test Conditions  
Min.  
Typ.  
Max.  
VGS = 0V  
30  
A
A
V
PLUS 247TM (IXFX) Outline  
ISM  
Repetitive, pulse width limited by TJM  
IF = IS, VGS = 0V, Note 1  
120  
1.5  
VSD  
trr  
300  
ns  
μC  
A
IF = 20A, -di/dt = 100 A/μs  
QRM  
IRM  
1.8  
13  
VR = 100 V, VGS = 0V  
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.  
Terminals: 1 - Gate  
2 - Drain (Collector)  
3 - Source (Emitter)  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min. Max.  
A
A1  
A2  
4.83  
2.29  
1.91  
5.21  
2.54  
2.16  
.190 .205  
.090 .100  
.075 .085  
b
b1  
b2  
1.14  
1.91  
2.92  
1.40  
2.13  
3.12  
.045 .055  
.075 .084  
.115 .123  
C
D
E
0.61  
20.80 21.34  
15.75 16.13  
0.80  
.024 .031  
.819 .840  
.620 .635  
e
5.45 BSC  
.215 BSC  
L
L1  
19.81 20.32  
.780 .800  
.150 .170  
3.81  
4.32  
Q
5.59  
6.20  
.220 0.244  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXFK30N110P  
IXFX30N110P  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
30  
25  
20  
15  
10  
5
70  
60  
50  
40  
30  
20  
10  
0
VGS = 10V  
8V  
VGS = 10V  
7V  
7V  
6V  
6V  
5V  
20  
0
0
0
0
1
2
3
4
5
6
7
8
9
10  
0
5
10  
15  
25  
30  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 15A Value  
vs. Junction Temperature  
Fig. 3. Output Characteristics  
@ 125ºC  
3.2  
2.8  
2.4  
2
30  
25  
20  
15  
10  
5
VGS = 10V  
VGS = 10V  
7V  
I D = 30A  
I D = 15A  
1.6  
1.2  
0.8  
0.4  
6V  
5V  
0
5
10  
15  
20  
25  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 15A Value  
vs. Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
35  
30  
25  
20  
15  
10  
5
2.6  
2.4  
2.2  
2
VGS = 10V  
TJ = 125ºC  
1.8  
1.6  
1.4  
1.2  
1
TJ = 25ºC  
0
0.8  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
5
10 15 20 25 30 35 40 45 50 55 60 65  
ID - Amperes  
TC - Degrees Centigrade  
© 2008 IXYS CORPORATION, All rights reserved  
IXFK30N110P  
IXFX30N110P  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
40  
35  
30  
25  
20  
15  
10  
5
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
TJ = - 40ºC  
TJ = 125ºC  
25ºC  
- 40ºC  
25ºC  
125ºC  
0
0
0
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
1.2  
40  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
16  
14  
12  
10  
8
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
VDS = 550V  
I D = 15A  
I G = 10mA  
6
TJ = 125ºC  
TJ = 25ºC  
4
2
0
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
0
50  
100  
150  
200  
250  
300  
350  
VSD - Volts  
QG - NanoCoulombs  
Fig. 12. Maximum Transient Thermal  
Impedance  
Fig. 11. Capacitance  
100,000  
10,000  
1,000  
100  
1.000  
0.100  
0.010  
0.001  
= 1 MHz  
f
C
iss  
C
C
oss  
rss  
10  
0
5
10  
15  
20  
25  
30  
35  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
VDS - Volts  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS REF: F_30N110P(96) 04-01-08-A  
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