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IXFH40N50Q2_08

型号：

IXFH40N50Q2_08

描述：

HiPerFET功率MOSFET Q2级[ HiPerFET Power MOSFETs Q2-Class ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

140 K

下载PDF手册
HiPerFETTM  
PowerMOSFETs  
Q2-Class  
IXFH40N50Q2  
VDSS  
ID25  
= 500V  
= 40A  
RDS(on) ≤ 160mΩ  
trr  
≤ 250ns  
N-Channel Enhancement Mode  
Avalanche Rated, High dv/dt, Low Qg  
Low intrinsic Rg, low trr  
TO-247(IXFH)  
Symbol  
TestConditions  
Maximum Ratings  
VDSS  
VDGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1MΩ  
500  
500  
V
V
(TAB)  
G
D
VGSS  
VGSM  
Continuous  
Transient  
±30  
±40  
V
V
S
ID25  
IDM  
TC =25°C  
TC = 25°C, pulse width limited by TJM  
40  
A
A
G = Gate  
S = Source  
D
= Drain  
160  
TAB = Drain  
IA  
TC =25°C  
40  
A
J
EAS  
dV/dt  
PD  
TC =25°C  
2.5  
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C  
TC =25°C  
20  
V/ns  
W
560  
Features  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
ꢀDouble metal process for low gate  
resistance  
TJM  
Tstg  
ꢀInternational standard package  
ꢀEpoxymeetUL94V-0, flammability  
classification  
-55 ... +150  
TL  
1.6mm (0.063 in) from case for 10s  
Mountingtorque  
300  
°C  
Md  
1.13/10  
Nm/lb.in.  
ꢀAvalanche energy and current rated  
ꢀFast intrinsic Rectifier  
Weight  
6
g
Applications  
ꢀ
DC-DCconverters  
Switched-mode and resonant-mode  
ꢀ
power supplies, >500kHz switching  
DCchoppers  
Pulsegeneration  
Laserdrivers  
ꢀ
Symbol  
TestConditions  
CharacteristicValues  
ꢀ
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ.  
Max.  
ꢀ
VDSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 4mA  
500  
3.0  
V
V
VGS(th)  
5.5  
Advantages  
IGSS  
IDSS  
VGS = ±30V, VDS = 0V  
±200 nA  
25 μA  
ꢀ
VDS = VDSS  
VGS =0V  
Easy to mount  
Spacesavings  
ꢀ
TJ = 125°C  
1
mA  
ꢀ
High power density  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
160 mΩ  
DS98970D(5/08)  
© 2008 IXYS CORPORATION, All rights reserved  
IXFH40N50Q2  
Symbol  
TestConditions  
CharacteristicValues  
TO-247 (IXFH) Outline  
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 10V, ID = 0.5 • ID25, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
15  
28  
S
Ciss  
Coss  
Crss  
4850  
680  
pF  
pF  
pF  
∅P  
1
2
3
170  
td(on)  
tr  
td(off)  
tf  
Resistive Switching Times  
17  
13  
42  
8
ns  
ns  
ns  
ns  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 2Ω (External)  
e
Terminals: 1 - Gate  
2 - Drain  
Qg(on)  
Qgs  
110  
25  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min.  
Max.  
Qgd  
50  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
RthJC  
RthCK  
0.22 °C/W  
°C/W  
0.21  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
e
5.20  
5.72 0.205 0.225  
L
L1  
19.81 20.32  
4.50  
.780 .800  
.177  
∅P 3.55  
3.65  
.140 .144  
Q
5.89  
6.40 0.232 0.252  
R
4.32  
5.49 .170 .216  
Source-DrainDiode  
Symbol  
TestConditions  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ.  
Max.  
40 A  
160 A  
1.5  
IS  
VGS = 0V  
ISM  
Repetitive, pulse width limited by TJM  
VSD  
IF = IS, VGS = 0 V, Note 1  
V
trr  
QRM  
IRM  
250 ns  
μC  
1
9
IF = 25A, -di/dt = 100 A/μs, VR = 100 V  
A
Notes: 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072  
4,881,106  
4,835,592  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405 B2 6,759,692  
6,710,463  
6,727,585  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXFH40N50Q2  
Fig. 1. Output Characteristics  
Fig. 2. Extended Output Characteristics  
@ 25 C  
º
@ 25 C  
º
40  
35  
30  
25  
20  
15  
10  
5
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
VGS = 10V  
7V  
VGS = 10V  
8V  
6V  
7V  
6V  
5.5V  
5V  
4.5V  
5V  
0
0
3
6
9
12 15 18 21 24 27 30  
VD S - Volts  
0
1
2
3
4
5
6
7
VD S - Volts  
Fig. 3. Output Characteristics  
@ 125 C  
Fig. 4. RDS(on) Normalized to 0.5 ID25 Value  
vs. Junction Temperature  
º
40  
35  
30  
25  
20  
15  
10  
5
3.2  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
V
GS = 10V  
7V  
V
GS = 10V  
6V  
5.5V  
I
= 40A  
D
5V  
I
= 20A  
D
4.5V  
0
0
2
4
6
8
VD S - Volts  
10  
12  
14  
16  
-50 -25  
0
25  
50  
75  
100 125 150  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to 0.5 ID25 Value  
vs. ID  
Fig. 6. Drain Current vs. Case  
Temperature  
45  
40  
35  
30  
25  
20  
15  
10  
5
3.4  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
V
GS = 10V  
T = 125ºC  
J
T = 25ºC  
J
0
0
10 20 30 40 50 60 70 80 90 100  
I D - Amperes  
-50 -25  
0
25  
50  
TC - Degrees Centigrade  
75  
100 125 150  
© 2008 IXYS CORPORATION, All rights reserved  
IXFH40N50Q2  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
T = - 40ºC  
J
25ºC  
T = 125ºC  
J
25ºC  
- 40ºC  
125ºC  
0
0
0
5
10 15 20 25 30 35 40 45 50 55 60 65  
I D - Amperes  
3.0  
3.5  
4.0  
4.5 5.0  
VG S - Volts  
5.5  
6.0  
6.5  
Fig. 9. Source Current vs. Source-To-Drain  
Voltage  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
120  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
VDS = 250V  
I
D
= 20A  
I
G
= 10mA  
T = 125ºC  
J
T = 25ºC  
J
0.4  
0.5  
0.6  
0.7 0.8 0.9  
VS D - Volts  
1.0  
1.1  
1.2  
0
10 20 30 40 50 60 70 80 90 100 110  
Q G - nanoCoulombs  
Fig. 12. Forward-Bias Safe Operating Area  
Fig. 11. Capacitance  
10000  
1000  
100  
1000  
100  
10  
C
iss  
R
Limit  
DS(on)  
25µs  
C
oss  
100µs  
1ms  
10ms  
C
rss  
T = 150ºC  
J
DC  
T = 25ºC  
C
f
= 1MHz  
5
Single Pulse  
1
0
10  
15  
20  
VD S - Volts  
25  
30  
35  
40  
10  
100  
VD S - Volts  
1000  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXFH40N50Q2  
Fig. 13. Maximum Transient Thermal Impedance  
1.00  
0.10  
0.01  
0.00  
0.1  
1
10  
100  
1000  
10000  
Pulse Width - milliseconds  
© 2008 IXYS CORPORATION, All rights reserved  
IXYS REF: F_40N50Q2 (84)5-28-08-C  
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