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IXFH230N10T

型号：

IXFH230N10T

描述：

海沟HiperFET功率MOSFET[ Trench HiperFET Power MOSFET ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

164 K

下载PDF手册
Preliminary Technical Information  
Trench HiperFETTM  
Power MOSFET  
VDSS = 100V  
ID25 = 230A  
RDS(on) ≤ 4.7mΩ  
IXFH230N10T  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Rectifier  
TO-247  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 175°C  
TJ = 25°C to 175°C, RGS = 1MΩ  
100  
100  
V
V
G
VDGR  
(TAB)  
D
S
VGSS  
VGSM  
Continuous  
Transient  
± 20  
± 30  
V
V
G = Gate  
S = Source  
D
= Drain  
ID25  
ILRMS  
IDM  
TC = 25°C  
Lead Current Limit, RMS  
TC = 25°C, Pulse Width Limited by TJM  
230  
160  
500  
A
A
A
TAB = Drain  
IA  
EAS  
TC = 25°C  
TC = 25°C  
115  
1.5  
A
J
Features  
z International Standard Package  
z 175°C Operating Temperature  
z High Current Handling Capability  
z Avalanche Rated  
PD  
TC = 25°C  
650  
W
TJ  
-55 ... +175  
175  
°C  
°C  
°C  
TJM  
Tstg  
z Fast Intrinsic Rectifier  
-55 ... +175  
z
Low RDS(on)  
TL  
Tsold  
1.6mm (0.062in.) from Case for 10s  
Plastic Body for 10 Seconds  
300  
260  
°C  
°C  
Advantages  
Weight  
6
g
z
Easy to Mount  
Space Savings  
High Power Density  
z
z
Symbol  
Test Conditions  
Characteristic Values  
Applications  
(TJ = 25°C Unless Otherwise Specified)  
Min. Typ.  
100  
2.5  
Max.  
z DC-DC Converters  
z Battery Chargers  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 1mA  
VDS = VGS, ID = 1mA  
VGS = ± 20V, VDS = 0V  
V
V
4.5  
z Switched-Mode and Resonant-Mode  
Power Supplies  
±200 nA  
z DC Choppers  
z AC Motor Drives  
IDSS  
VDS = VDSS  
VGS = 0V  
50 μA  
TJ = 150°C  
3 mA  
z Uninterruptible Power Supplies  
z High Speed Power Switching  
Applications  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25 Notes 1, 2  
4.7 mΩ  
DS100104(01/09)  
© 2009 IXYS CORPORATION, All rights reserved  
IXFH230N10T  
Symbol  
Test Conditions  
Characteristic Values  
Min. Typ. Max.  
TO-247 (IXFH) Outline  
(TJ = 25°C, Unless Otherwise Specified)  
gfs  
VDS = 10V, ID = 60A, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
80  
135  
S
Ciss  
Coss  
Crss  
15.3  
1525  
195  
nF  
pF  
pF  
∅ P  
1
2
3
td(on)  
tr  
td(off)  
tf  
29  
40  
45  
15  
ns  
ns  
ns  
ns  
Resistive Switching Times  
V
GS = 10V, VDS = 0.5 • VDSS, ID = 100A  
e
RG = 1Ω (External)  
Terminals: 1 - Gate  
2 - Drain  
Qg(on)  
Qgs  
250  
70  
nC  
nC  
nC  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
Qgd  
65  
RthJC  
RthCH  
0.23 °C/W  
°C/W  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
0.21  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
Source-Drain Diode  
e
5.20  
5.72 0.205 0.225  
L
L1  
19.81 20.32  
4.50  
.780 .800  
.177  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min. Typ.  
Max.  
230  
900  
1.3  
∅P 3.55  
Q
3.65  
.140 .144  
5.89  
6.40 0.232 0.252  
IS  
VGS = 0V  
A
A
V
R
4.32  
5.49 .170 .216  
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = 100A, VGS = 0V, Note 1  
IF = 100A, VGS = 0V  
trr  
82  
4.8  
ns  
A
IRM  
QRM  
-di/dt = 100A/μs  
VR = 50V  
196  
nC  
Note 1: Pulse Test, t ≤ 300μs; Duty Cycle, d ≤ 2%.  
PRELIMINARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from data gathered during objective characterizations of preliminary engineering lots; but also may yet  
contain some information supplied during a pre-production design evaluation. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXFH230N10T  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
240  
220  
200  
180  
160  
140  
120  
100  
80  
350  
300  
250  
200  
150  
100  
50  
VGS = 15V  
VGS = 15V  
10V  
9V  
8V  
10V  
8V  
7V  
6V  
7V  
6V  
5V  
60  
40  
5V  
20  
0
0
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
5.0  
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 115A Value  
vs. Junction Temperature  
Fig. 3. Output Characteristics  
@ 150ºC  
240  
220  
200  
180  
160  
140  
120  
100  
80  
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
VGS = 15V  
VGS = 10V  
10V  
8V  
7V  
I D = 230A  
6V  
5V  
I D = 115A  
60  
40  
20  
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4  
VDS - Volts  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 115A Value  
vs. Drain Current  
Fig. 6. Drain Current vs. Case Temperature  
180  
160  
140  
120  
100  
80  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
External Lead Current Limit  
VGS = 10V  
15V  
- - - -  
TJ = 175ºC  
60  
40  
20  
TJ = 25ºC  
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
0
25 50 75 100 125 150 175 200 225 250 275 300  
ID - Amperes  
TC - Degrees Centigrade  
© 2009 IXYS CORPORATION, All rights reserved  
IXFH230N10T  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
280  
240  
200  
160  
120  
80  
280  
240  
200  
160  
120  
80  
TJ = - 40ºC  
25ºC  
TJ = 150ºC  
25ºC  
- 40ºC  
150ºC  
40  
40  
0
0
0
0
1
40  
80  
120  
160  
200  
240  
280  
3.0  
0.3  
0
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
1.3  
40  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
300  
250  
200  
150  
100  
50  
VDS = 50V  
I D = 115A  
I G = 10mA  
TJ = 150ºC  
TJ = 25ºC  
0
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
1.2  
25  
50  
75  
100 125 150 175 200 225 250  
QG - NanoCoulombs  
VSD - Volts  
Fig. 11. Capacitance  
Fig. 12. Forward-Bias Safe Operating Area  
100,000  
10,000  
1,000  
100  
1,000.0  
100.0  
10.0  
1.0  
RDS(on) Limit  
= 1 MHz  
f
C
25µs  
iss  
100µs  
External lead Limit  
1ms  
C
10ms  
oss  
100ms  
DC  
TJ = 175ºC  
C
TC = 25ºC  
Single Pulse  
rss  
0.1  
5
10  
15  
20  
25  
30  
35  
10  
100  
1000  
VDS - Volts  
VDS - Volts  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS REF: F_230N10T(7V)1-27-09  
IXFH230N10T  
Fig. 13. Resistive Turn-on  
Rise Time vs. Junction Temperature  
Fig. 14. Resistive Turn-on  
Rise Time vs. Drain Current  
60  
55  
50  
45  
40  
35  
30  
25  
20  
48  
47  
46  
45  
44  
43  
42  
41  
40  
39  
38  
RG = 1Ω  
GS = 10V  
VDS = 50V  
RG = 1ꢀ  
V
VGS = 10V  
VDS = 50V  
TJ = 125ºC  
TJ = 25ºC  
I D = 200A  
I D = 100A  
40  
60  
80  
100  
120  
140  
160  
180  
200  
25  
35  
45  
55  
65  
75  
85  
95  
105 115 125  
TJ - Degrees Centigrade  
ID - Amperes  
Fig. 15. Resistive Turn-on  
Switching Times vs. Gate Resistance  
Fig. 16. Resistive Turn-off  
Switching Times vs. Junction Temperature  
500  
450  
400  
350  
300  
250  
200  
150  
100  
50  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
28  
26  
24  
22  
20  
18  
16  
14  
12  
56  
t r  
td(on) - - - -  
t f  
RG = 1Ω, VGS = 10V  
td(off) - - - -  
54  
52  
50  
48  
46  
44  
42  
40  
TJ = 125ºC, VGS = 10V  
VDS = 50V  
VDS = 50V  
I D = 200A, 100A  
I D = 100A  
I D = 200A  
0
25  
35  
45  
55  
65  
75  
85  
95  
105 115 125  
1
2
3
4
5
6
7
8
9
10  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 17. Resistive Turn-off  
Switching Times vs. Drain Current  
Fig. 18. Resistive Turn-off  
Switching Times vs. Gate Resistance  
24  
23  
22  
21  
20  
19  
18  
17  
16  
15  
14  
13  
12  
62  
60  
58  
56  
54  
52  
50  
48  
46  
44  
42  
40  
38  
400  
360  
320  
280  
240  
200  
160  
120  
80  
220  
200  
180  
160  
140  
120  
100  
80  
tf  
td(off) - - - -  
tf  
RG = 1ꢀ, VGS = 10V  
td(off) - - - -  
TJ = 125ºC, VGS = 10V  
VDS = 50V  
I D = 200A  
TJ = 125ºC  
VDS = 50V  
I D = 100A  
60  
TJ = 25ºC  
80  
40  
40  
0
20  
40  
60  
100  
120  
140  
160  
180  
200  
1
2
3
4
5
6
7
8
9
10  
ID - Amperes  
RG - Ohms  
© 2009 IXYS CORPORATION, All rights reserved  
IXFH230N10T  
Fig. 19. Maximum Transient Thermal Impedance  
1.00  
0.10  
0.01  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS REF: F_230N10T(7V)1-27-09  
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