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IXFC16N50P

型号：

IXFC16N50P

描述：

PolarHV HiPerFET功率MOSFET[ PolarHV HiPerFET Power MOSFET ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

4 页

PDF大小：

202 K

下载PDF手册
PolarHVTM HiPerFET  
Power MOSFET  
VDSS = 500V  
ID25 = 10A  
IXFC16N50P  
RDS(on) ≤ 450mΩ  
trr  
≤ 200ns  
(Electrically Isolated Back Surface)  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Diode  
ISOPLUS 220TM  
E153432  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1MΩ  
500  
500  
V
V
VDGR  
VGSS  
VGSM  
Continuous  
Transient  
±30  
±40  
V
V
G
D
S
ID25  
IDM  
TC = 25°C  
TC = 25°C, pulse width limited by TJM  
10  
35  
A
A
Isolated Tab  
D = Drain  
G = Gate  
S = Source  
IA  
TC = 25°C  
TC = 25°C  
10  
A
EAS  
750  
mJ  
dV/dt  
PD  
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C  
TC = 25°C  
10  
V/ns  
W
Features  
125  
z UL Recognized Package  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
z Silicon Chip on Direct-Copper-Bond  
Substrate  
- High Power Dissipation  
- Isolated Mounting Surface  
- 2500V Electrical Isolation  
TL  
TSOLD  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10s  
300  
260  
°C  
°C  
z
Avanlache Rated  
VISOL  
50/60 Hz, RMS  
t = 1min  
t = 1s  
2500  
3000  
V~  
V~  
z
Fast Intrinsic Diode  
IISOL ≤ 1mA  
Md  
Mounting Force  
11..65 / 2.5..14.6  
2
N/lb.  
g
Advantages  
Weight  
z
Easy to Mount  
Space Savings  
z
z
High Power Density  
Applications:  
Symbol  
Test Conditions  
Characteristic Values  
z Switched-Mode and Resonant-Mode  
Power Supplies  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
500  
3.0  
Typ.  
Max.  
z DC-DC Converters  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 2.5mA  
VGS = ±30V, VDS = 0V  
VDS = VDSS, VGS= 0V  
V
V
z Laser Drivers  
z AC and DC Motor Drives  
z Robotics and Servo Controls  
5.5  
±100 nA  
IDSS  
15 μA  
TJ = 125°C  
250 μA  
RDS(on)  
VGS = 10V, ID = 8A, Note 1  
450 mΩ  
DS99411F(5/09)  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXFC16N50P  
ISOPLUS220TM (IXFC) Outline  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 20V, ID = 8A, Note 1  
9
16  
S
Ciss  
Coss  
Crss  
2480  
237  
18  
pF  
pF  
pF  
VGS = 0V, VDS = 25V, f = 1MHz  
td(on)  
tr  
td(off)  
tf  
23  
25  
70  
22  
ns  
ns  
ns  
ns  
Resistive Switching Times  
VGS = 10V, VDS = 0.5 • VDSS, ID = 8A  
RG = 10Ω (External)  
Note:  
Qg(on)  
Qgs  
43  
15  
12  
nC  
nC  
nC  
Bottom heatsink (Pin 4) is  
electrically isolated from Pin  
1,2, or 3.  
VGS = 10V, VDS = 0.5 • VDSS, ID = 8A  
Qgd  
RthJC  
RthCS  
1.0 °C/W  
°C/W  
0.21  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
IS  
VGS = 0V  
16  
A
A
V
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
64  
Ref: IXYS CO 0177 R0  
1.5  
trr  
QRM  
IRM  
200 ns  
IF = 16A, -di/dt = 100A/μs  
6.0  
0.6  
nC  
A
VR = 100V, VGS = 0V  
Note 1: Pulse Test, t ≤ 300μs; Duty Cycle, d ≤ 2%.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,727,585  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,534,343  
6,583,505  
6,710,405 B2 6,759,692  
6,710,463  
6,771,478 B2 7,071,537  
IXFC16N60P  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Output Characteristics  
@ 125ºC  
20  
18  
16  
14  
12  
10  
8
20  
18  
16  
14  
12  
10  
8
VGS = 10V  
VGS = 10V  
8V  
8V  
7V  
7V  
6V  
6
6
4
4
6V  
5V  
2
2
0
0
0
1
2
3
4
5
6
7
8
9
0
2
4
6
8
10  
12  
14  
16  
18  
20  
VDS - Volts  
VDS - Volts  
Fig. 3. RDS(on) Normalized to ID = 8A Value  
vs. Junction Temperature  
Fig. 4. RDS(on) Normalized to ID = 8A Value  
vs. Drain Current  
3.2  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
VGS = 10V  
VGS = 10V  
TJ = 125ºC  
I D = 16A  
I D = 8A  
TJ = 25ºC  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0
2
4
6
8
10  
12  
14  
16  
18  
20  
ID - Amperes  
TJ - Degrees Centigrade  
Fig. 5. Maximum Drain Current vs.  
Case Temperature  
Fig. 6. Input Admittance  
11  
10  
9
20  
18  
16  
14  
12  
10  
8
8
TJ = 125ºC  
7
25ºC  
- 40ºC  
6
5
4
6
3
4
2
1
2
0
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
4.0  
4.4  
4.8  
5.2  
5.6  
6.0  
6.4  
6.8  
7.2  
TJ - Degrees Centigrade  
VGS - Volts  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXFC16N50P  
Fig. 8. Forward Voltage Drop of  
Fig. 7. Transconductance  
Intrinsic Diode  
28  
24  
20  
16  
12  
8
70  
60  
50  
40  
30  
20  
10  
0
TJ = - 40ºC  
25ºC  
125ºC  
TJ = 125ºC  
TJ = 25ºC  
4
0
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1
1.1  
1.2  
0
2
4
6
8
10  
12  
14  
16  
18  
20  
ID - Amperes  
VSD - Volts  
Fig. 9. Gate Charge  
Fig. 10. Capacitance  
10  
9
8
7
6
5
4
3
2
1
0
10,000  
1,000  
100  
10  
VDS = 250V  
I
I
D = 8A  
G = 10mA  
C
C
iss  
oss  
C
rss  
= 1 MHz  
5
f
1
0
10  
15  
20  
25  
30  
35  
40  
0
5
10  
15  
20  
25  
30  
35  
40  
45  
VDS - Volts  
QG - NanoCoulombs  
Fig. 12. Maximum Transient Thermal Impedance  
Fig. 11. Forward-Bias Safe Operating Area  
100  
10  
1
10.00  
1.00  
0.10  
0.01  
RDS(on) Limit  
25µs  
100µs  
1ms  
10ms  
DC  
TJ = 150ºC  
TC = 25ºC  
Single Pulse  
0
10  
100  
1000  
0.0001  
0.001  
0.01  
0.1  
1
10  
VDS - Volts  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: F_16N50P(5J-745)5-1-09-C  
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