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IXFC110N10P

型号：

IXFC110N10P

描述：

PolarHV HiPerFET功率MOSFET ISOPLUS220[ PolarHV HiPerFET Power MOSFET ISOPLUS220 ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

230 K

下载PDF手册
PolarHVTM HiPerFET  
Power MOSFET  
IXFC 110N10P  
VDSS = 100 V  
ID25 = 60 A  
RDS(on) ≤ 17 mΩ  
ISOPLUS220TM  
trr  
≤ 150 ns  
(Electrically Isolated Back Surface)  
N-Channel Enhancement Mode  
Fast Intrinsic Diode  
Avalanche Rated  
ISOPLUS220TM (IXFC)  
E153432  
Symbol  
Test Conditions  
Maximum Ratings  
VDSS  
VDGR  
TJ = 25° C to 175° C  
100  
100  
V
TJ = 25° C to 175° C; RGS = 1 MΩ  
V
VGSS  
VGSM  
Continuous  
Transient  
20  
30  
V
V
G
D
S
Isolated back surface  
ID25  
IDM  
TC = 25° C  
60  
A
A
TC = 25° C, pulse width limited by TJM  
250  
G = Gate  
S = Source  
D = Drain  
IAR  
TC =25° C  
60  
A
EAR  
EAS  
TC =25° C  
TC =25° C  
40  
mJ  
J
1.0  
Features  
Silicon chip on Direct-Copper-Bond  
substrate  
l
dv/dt  
PD  
IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS  
TJ ≤150° C, RG = 4 Ω  
,
10  
V/ns  
- High power dissipation  
- Isolated mounting surface  
- 2500V electrical isolation  
Low drain to tab capacitance(<35pF)  
Low RDS (on) HDMOSTM process  
Rugged polysilicon gate cell structure  
Unclamped Inductive Switching (UIS)  
rated  
TC =25° C  
120  
W
l
l
l
l
TJ  
TJM  
Tstg  
-55 ... +175  
175  
-55 ... +150  
°C  
°C  
°C  
TL  
TSOLD  
1.6 mm (0.062 in.) from case for 10 s  
Plastic body for 10 s  
300  
260  
°C  
°C  
V~  
l
Fast intrinsic Rectifier  
VISOL  
50/60 Hz, RMS t = 1 minute leads-to-tab  
2500  
FC  
Mounting Force  
11..65 / 2.5..15  
N/lb  
Applications  
l
DC-DC converters  
Battery chargers  
Weight  
2
g
l
l
Switched-mode and resonant-mode  
power supplies  
DC choppers  
AC motor control  
l
l
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25° C, unless otherwise specified)  
Min. Typ.  
Max.  
Advantages  
Easy assembly: no screws, or isolation  
BVDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 µA  
VDS = VGS, ID = 4 mA  
VGS = 20 VDC, VDS = 0  
100  
V
V
l
foils required  
Space savings  
High power density  
Low collector capacitance to ground  
2.5  
5.0  
l
l
100  
nA  
l
IDSS  
VDS = VDSS  
VGS = 0 V  
25  
250  
µA  
µA  
(low EMI)  
TJ = 150° C  
RDS(on)  
VGS = 10 V, ID = 55 A  
17 mΩ  
DS99370E(03/06)  
© 2006 IXYS All rights reserved  
IXFC 110N10P  
ISOPLUS220TM (IXFC) Outline  
Symbol  
gfs  
Test Conditions  
Characteristic Values  
(TJ = 25° C, unless otherwise specified)  
Min.  
Typ.  
Max.  
VDS= 10 V; ID =55 A, Note 1  
30  
43  
S
Ciss  
Coss  
Crss  
3550  
1370  
440  
pF  
pF  
pF  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
td(on)  
tr  
td(off)  
tf  
21  
25  
65  
25  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 VDSS, ID = 60 A  
RG = 4 Ω (External)  
Note:  
Bottom heatsink (Pin 4) is  
electrically isolated from Pin  
1,2, or 3.  
Qg(on)  
Qgs  
110  
25  
nC  
nC  
nC  
VGS= 10 V, VDS = 0.5 VDSS, ID = 55 A  
Qgd  
62  
RthJC  
RthCS  
1.25° C/W  
° C/W  
0.21  
Source-Drain Diode  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Symbol  
IS  
Test Conditions  
Min.  
Typ.  
Max.  
VGS = 0 V  
Repetitive  
110  
A
A
V
Ref: IXYS CO 0177 R0  
ISM  
250  
1.5  
VSD  
IF = IS, VGS = 0 V,  
Pulse test, t ≤300 µs, duty cycle d≤ 2 %  
trr  
IF = 25 A, -di/dt = 100 A/µs  
150 ns  
QRM  
VR = 50 V, VGS = 0 V  
0.6  
µC  
Note: Pulse test, t ≤300 µs, duty cycle d ≤ 2 %  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844  
one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,727,585  
6,534,343  
6,583,505  
6,710,405B2 6,759,692  
6,710,463  
6,771,478 B2  
IXFC 110N10P  
Fig. 1. Output Characteristics  
@ 25  
Fig. 2. Extended Output Characteristics  
º
C
@ 25 C  
º
220  
200  
180  
160  
140  
120  
100  
80  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
VGS = 10V  
9V  
V
= 10V  
GS  
9V  
8V  
8V  
7V  
7V  
6V  
60  
40  
6V  
5V  
20  
0
0
1
2
3
4
5
6
7
8
9
10  
0
0
0
0.2 0.4 0.6 0.8  
1
1.2 1.4 1.6 1.8  
2
VD S - Volts  
VD S - Volts  
Fig. 3. Output Characteristics  
Fig. 4. RDS(on Norm alized to ID = 55A  
)
@ 150 C  
º
Value vs. Junction Tem perature  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
2.4  
2.2  
2
VGS = 10V  
9V  
VGS = 10V  
1.8  
1.6  
1.4  
1.2  
1
8V  
7V  
ID = 110A  
ID = 55A  
6V  
5V  
0.8  
0.6  
0.5  
1
1.5  
2
2.5  
3
3.5  
4
-50 -25  
0
25  
50  
75  
100 125 150 175  
VD S - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Norm alized to ID = 55A  
Value vs. Drain Current  
Fig. 6. Drain Curre nt vs . Cas e  
Te m pe rature  
60  
50  
40  
30  
20  
10  
0
3
2.8  
2.6  
2.4  
2.2  
2
VGS = 10V  
VGS = 15V  
- - - -  
= 175ºC  
TJ  
1.8  
1.6  
1.4  
1.2  
1
= 25ºC  
TJ  
0.8  
0.6  
-50 -25  
0
25  
50  
75  
100 125 150 175  
25 50 75 100 125 150 175 200 225 250  
I D - Amperes  
TC - Degrees Centigrade  
© 2006 IXYS All rights reserved  
IXFC 110N10P  
Fig. 8. Transconductance  
Fig. 7. Input Adm ittance  
250  
225  
200  
175  
150  
125  
100  
75  
70  
60  
50  
40  
30  
20  
10  
0
= -40ºC  
25ºC  
150ºC  
TJ  
= -40ºC  
25ºC  
150ºC  
TJ  
50  
25  
0
4
5
6
7
8
9
10  
11  
0
50  
100  
150  
200  
250  
300  
VG S - Volts  
I D - Amperes  
Fig. 9. Source Current vs.  
Source-To-Drain Voltage  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
350  
300  
250  
200  
150  
100  
50  
VDS = 50V  
D = 55A  
IG = 10mA  
I
º
TJ = 150 C  
º
TJ = 25 C  
0
0.4  
0.6  
0.8  
1
1.2  
1.4  
1.6  
1.8  
2
0
20  
40  
60  
80  
100  
120  
VS D - Volts  
Q G - nanoCoulombs  
Fig. 12. Forw ard-Bias  
Safe Ope rating Are a  
Fig. 11. Capacitance  
10000  
1000  
100  
1000  
RDS(on) Lim it  
25µs  
C
C
C
iss  
100  
10  
1
100µs  
1m s  
oss  
rss  
10m s  
= 175ºC  
TJ  
DC  
= 25ºC  
f = 1MHz  
TC  
0
5
10  
15  
20  
25  
30  
35  
40  
1
10  
100  
1000  
VDS - Volts  
V D S - V olts  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXFC 110N10P  
Fig. 13. Maxim um Transient Therm al Resistance  
10.00  
1.00  
0.10  
0.01  
0.1  
1
10  
100  
1000  
Pulse Width - milliseconds  
IXYSREF:T_110N10P(6S)6-15-05-A.xls  
© 2006 IXYS All rights reserved  
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