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IXFB82N60Q3

型号：

IXFB82N60Q3

描述：

HiperFETTM功率MOSFET Q3级[ HiperFETTM Power MOSFET Q3-Class ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

141 K

下载PDF手册
Advance Technical Information  
HiperFETTM  
Power MOSFET  
Q3-Class  
VDSS = 600V  
ID25 = 82A  
RDS(on) ≤ 75mΩ  
IXFB82N60Q3  
trr  
≤ 300ns  
N-Channel Enhancement Mode  
Fast Intrinsic Rectifier  
PLUS264TM  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1MΩ  
600  
600  
V
V
G
VDGR  
D
S
VGSS  
VGSM  
Continuous  
Transient  
±30  
±40  
V
V
Tab  
ID25  
IDM  
TC = 25°C  
TC = 25°C, Pulse Width Limited by TJM  
82  
A
A
G = Gate  
D
= Drain  
S
= Source  
Tab = Drain  
240  
IA  
EAS  
TC = 25°C  
TC = 25°C  
82  
4
A
J
Features  
dv/dt  
PD  
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C  
TC = 25°C  
50  
V/ns  
W
1560  
z
Low Intrinsic Gate Resistance  
Low Package Inductance  
Fast Intrinsic Rectifier  
Low RDS(on) and QG  
z
z
z
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
TL  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10s  
300  
°C  
°C  
TSOLD  
FC  
260  
30..120/6.7..27  
10  
Advantages  
Mounting Force  
N/lb.  
g
z
High Power Density  
Easy to Mount  
Space Savings  
Weight  
z
z
Applications  
z
DC-DC Converters  
Battery Chargers  
Switch-Mode and Resonant-Mode  
z
Symbol  
Test Conditions  
Characteristic Values  
z
(TJ = 25°C Unless Otherwise Specified)  
Min.  
600  
3.5  
Typ.  
Max.  
Power Supplies  
DC Choppers  
Temperature and Lighting Controls  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 3mA  
VDS = VGS, ID = 8mA  
VGS = ±30V, VDS = 0V  
VDS = VDSS, VGS = 0V  
V
V
z
z
6.5  
±200 nA  
IDSS  
50 μA  
TJ = 125°C  
3 mA  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
75 mΩ  
DS100339(05/11)  
© 2011 IXYS CORPORATION, All Rights Reserved  
IXFB82N60Q3  
Symbol  
Test Conditions  
Characteristic Values  
PLUS264TM (IXFB) Outline  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 20V, ID = ID = 0.5 • ID25, Note 1  
33  
55  
S
Ciss  
Coss  
Crss  
13.5  
1450  
120  
nF  
pF  
pF  
VGS = 0V, VDS = 25V, f = 1MHz  
Gate Input Resistance  
RGi  
0.12  
40  
Ω
td(on)  
ns  
Resistive Switching Times  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 1Ω (External)  
tr  
13  
60  
ns  
ns  
td(off)  
tf  
14  
ns  
Qg(on)  
Qgs  
275  
88  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = ID = 0.5 • ID25  
Qgd  
120  
RthJC  
RthCS  
0.08 °C/W  
°C/W  
0.13  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
IS  
VGS = 0V  
82  
A
A
V
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
330  
1.5  
trr  
QRM  
IRM  
300 ns  
IF = 41A, -di/dt = 100A/μs  
1.9  
15.4  
μC  
A
VR = 100V, VGS = 0V  
Note  
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a  
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test  
conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXFB82N60Q3  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
VGS = 10V  
9V  
VGS = 10V  
80  
70  
60  
50  
40  
30  
20  
10  
0
160  
140  
120  
100  
80  
8V  
7V  
8V  
60  
7V  
6V  
40  
20  
6V  
5V  
0
0
0
0
1
2
3
4
5
6
7
0
5
10  
15  
20  
25  
30  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 41A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
VGS = 10V  
8V  
80  
70  
60  
50  
40  
30  
20  
10  
0
VGS = 10V  
I D = 82A  
7V  
6V  
I D = 41A  
5V  
4V  
2
4
6
8
10  
12  
14  
16  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 41A Value vs.  
Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
VGS = 10V  
TJ = 125ºC  
TJ = 25ºC  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
20  
40  
60  
80  
100  
120  
140  
160  
180  
ID - Amperes  
TC - Degrees Centigrade  
© 2011 IXYS CORPORATION, All Rights Reserved  
IXFB82N60Q3  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
TJ = - 40ºC  
25ºC  
125ºC  
TJ = 125ºC  
25ºC  
- 40ºC  
3.5  
0.3  
0
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
8.5  
1.7  
40  
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
100  
VGS - Volts  
ID - Amperes  
Fig. 10. Gate Charge  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
16  
14  
12  
10  
8
320  
280  
240  
200  
160  
120  
80  
VDS = 300V  
I D = 41A  
I G = 10mA  
6
TJ = 125ºC  
4
TJ = 25ºC  
40  
2
0
0
0.5  
0.7  
0.9  
1.1  
1.3  
1.5  
0
50  
100  
150  
200  
250  
300  
350  
400  
VSD - Volts  
QG - NanoCoulombs  
Fig. 12. Forward-Bias Safe Operating Area  
Fig. 11. Capacitance  
1000  
100  
10  
100,000  
10,000  
1,000  
100  
= 1 MHz  
f
RDS(on) Limit  
C
iss  
25µs  
100µs  
C
oss  
TJ = 150ºC  
C
rss  
TC = 25ºC  
Single Pulse  
1ms  
10  
1
5
10  
15  
20  
25  
30  
35  
10  
100  
1,000  
VDS - Volts  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXFB82N60Q3  
Fig. 13. Maximum Transient Thermal Impedance  
0.1  
0.01  
0.001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2011 IXYS CORPORATION, All Rights Reserved  
IXYS REF: F_82N60Q3(Q9) 5-19-11  
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