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IXFB82N60P

型号：

IXFB82N60P

描述：

PolarHV HiPerFET功率MOSFET[ PolarHV HiPerFET Power MOSFET ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

101 K

下载PDF手册
PolarHVTM HiPerFET  
Power MOSFET  
IXFB 82N60P  
VDSS = 600 V  
ID25 = 82 A  
R
≤ 75 mΩ  
trrDS(on) ≤ 200 ns  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Diode  
Symbol  
Test Conditions  
Maximum Ratings  
PLUS264TM (IXFB)  
VDSS  
VDGR  
TJ = 25°C to 150°C  
600  
600  
V
V
TJ = 25°C to 150°C; RGS = 1 MΩ  
VGSS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
(TAB)  
G
D
S
ID25  
IDRMS  
IDM  
TC = 25°C  
External lead current limit  
TC = 25°C, pulse width limited by TJM  
82  
75  
200  
A
A
A
G = Gate  
D = Drain  
S = Source  
TAB = Drain  
IAR  
TC = 25°C  
82  
A
EAR  
EAS  
TC = 25°C  
TC = 25°C  
100  
5
mJ  
J
Features  
dv/dt  
PD  
IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS  
TJ ≤ 150°C, RG = 2 Ω  
,
20  
V/ns  
z International standard packages  
z Fast recovery diode  
z Unclamped Inductive Switching (UIS)  
rated  
TC = 25°C  
1250  
W
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
z Low package inductance  
- easy to drive and to protect  
TL  
TSOLD  
1.6 mm (0.062 in.) from case for 10 s  
Plastic body for 10 s  
300  
260  
°C  
°C  
Advantages  
FC  
Mounting force  
30..120/7.5...2.7  
10  
N/lb  
g
z
Plus 264TM package for clip or spring  
Space savings  
High power density  
z
Weight  
z
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 3 mA  
VDS = VGS, ID = 8 mA  
VGS = 30 VDC, VDS = 0  
600  
V
V
3.0  
5.0  
200  
25  
nA  
IDSS  
VDS = VDSS  
VGS = 0 V  
μA  
μA  
TJ = 125°C  
2000  
RDS(on)  
VGS = 10 V, ID = 0.5 ID25, Note 1  
75 mΩ  
DS99530E(08/06)  
© 2006 IXYS All rights reserved  
IXFB 82N60P  
Symbol  
gfs  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ. Max.  
PLUS264TM (IXFB) Outline  
VDS = 20 V; ID = 0.5 ID25, Note 1  
50  
80  
S
Ciss  
Coss  
Crss  
23  
1490  
200  
nF  
pF  
pF  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
td(on)  
tr  
td(off)  
tf  
28  
23  
79  
24  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 VDSS, ID =0.5 ID25  
RG = 1 Ω (External)  
Qg(on)  
Qgs  
240  
96  
nC  
nC  
nC  
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25  
Qgd  
67  
RthJC  
RthCS  
0.10 °C/W  
°C/W  
0.13  
Source-Drain Diode  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ. Max.  
Symbol  
Test Conditions  
IS  
VGS = 0 V  
82  
200  
1.5  
A
ISM  
VSD  
trr  
Repetitive  
A
V
IF = IS, VGS = 0 V, Note 1  
IF = 25A, -di/dt = 100 A/μs  
200  
ns  
QRM  
IRM  
VR = 100V  
0.6  
6.0  
μC  
A
Notes:  
1. Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844  
one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,727,585  
6,534,343  
6,583,505  
6,710,405B2 6,759,692  
6,710,463 6,771,478 B2  
IXFB 82N60P  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
180  
160  
140  
120  
100  
80  
V
= 10V  
8V  
GS  
V
= 10V  
8V  
GS  
7V  
7V  
6V  
5V  
60  
6V  
40  
20  
5V  
12  
0
0
0
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
5
5.5  
6
0
2
4
6
8
10  
14  
16  
18  
20  
150  
150  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 41A Value  
vs. Junction Temperature  
Fig. 3. Output Characteristics  
@ 125ºC  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
3.1  
2.8  
2.5  
2.2  
1.9  
1.6  
1.3  
1
V
= 10V  
7V  
V
= 10V  
GS  
GS  
6V  
I
= 82A  
D
I
= 41A  
D
0.7  
0.4  
5V  
10  
2
4
6
8
12  
14  
-50  
-25  
0
25  
50  
75  
100  
125  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 41A Value  
vs. Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
3
2.8  
2.6  
2.4  
2.2  
2
V
= 10V  
External Lead Current Limit  
GS  
T
J
= 125ºC  
1.8  
1.6  
1.4  
1.2  
1
T
J
= 25ºC  
140  
0.8  
-50  
-25  
0
25  
50  
75  
100  
125  
20  
40  
60  
80  
100  
120  
160  
180  
TJ - Degrees Centigrade  
ID - Amperes  
© 2006 IXYS All rights reserved  
IXFB 82N60P  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
120  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
160  
140  
120  
100  
80  
T
J
= 125ºC  
25ºC  
- 40ºC  
T
J
= - 40ºC  
25ºC  
125ºC  
60  
40  
20  
0
3.5  
4
4.5  
5
5.5  
6
6.5  
7
0
20  
40  
60  
80  
100  
120  
140  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
250  
225  
200  
175  
150  
125  
100  
75  
10  
9
8
7
6
5
4
3
2
1
0
V
= 300V  
DS  
I
I
= 41A  
D
G
= 10mA  
T
J
= 125ºC  
T
J
= 25ºC  
50  
25  
0
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1
1.1  
1.2  
1.3  
0
25  
50  
75  
100 125 150 175 200 225 250  
VSD - Volts  
QG - NanoCoulombs  
Fig. 12. Forward-Bias Safe Operating Area  
Fig. 11. Capacitance  
100,000  
10,000  
1,000  
100  
1,000  
100  
10  
f = 1 MHz  
R
Limit  
DS(on)  
25µs  
C
C
iss  
100µs  
1ms  
oss  
rss  
10ms  
DC  
C
T
= 150ºC  
J
T
= 25ºC  
C
1
0
5
10  
15  
20  
25  
30  
35  
40  
10  
100  
1000  
VDS - Volts  
VDS - Volts  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXFB 82N60P  
Fig. 13. Maximum Transient Thermal Resistance  
1.000  
0.100  
0.010  
0.001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2006 IXYS All rights reserved  
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