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IXFB80N50Q2_07

型号：

IXFB80N50Q2_07

描述：

HiPerFET功率MOSFET[ HiPerFET Power MOSFETs ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

4 页

PDF大小：

125 K

下载PDF手册
HiPerFETTM  
Power MOSFETs  
VDSS = 500V  
IXFB80N50Q2  
ID25  
R
=
≤
80A  
60mΩ  
trrDS(on) ≤ 250ns  
N-Channel Enhancement Mode  
Avalanche Rated, Low Qg, Low Intrinsic RG  
High dV/dt, Low trr  
PLUS264TM( IXFB)  
Symbol  
Test Conditions  
Maximum Ratings  
VDSS  
VDGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1MΩ  
500  
500  
V
V
VGSS  
VGSM  
Continuous  
Transient  
± 30  
± 40  
V
V
G
D
S
( TAB )  
ID25  
IDRMS  
IDM  
TC = 25°C  
80  
75  
320  
A
A
A
External lead limited  
TC = 25°C, pulse width limited by TJM  
G = Gate  
D = Drain  
TAB = Drain  
S = Source  
IAR  
EAR  
EAS  
TC = 25°C  
TC = 25°C  
TC = 25°C  
80  
60  
5.0  
A
mJ  
J
Features  
z Double metal process for low gate  
resistance  
dV/dt  
PD  
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C  
TC = 25°C  
20  
960  
V/ns  
W
z Unclamped Inductive Switching (UIS)  
rated  
TJ  
-55 ... +150  
°C  
z Low package inductance  
- easy to drive and to protect  
z Fast intrinsic rectifier  
TJM  
Tstg  
150  
-55 ... +150  
°C  
°C  
TL  
TSOLD  
1.6 mm (0.063 in.) from case for 10s  
Plastic body for 10s  
300  
260  
°C  
°C  
Applications  
z
FC  
Mounting force  
30...120/6.7...27  
10  
N / lbs  
g
DC-DC converters  
Switched-mode and resonant-mode  
power supplies, >500kHz switching  
DC choppers  
z
Weight  
z
z Pulse generation  
z Laser drivers  
Symbol  
Test Conditions  
Characteristic Values  
Advantages  
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ. Max.  
z
PLUS 264TM package for clip or spring  
BVDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 1mA  
VDS = VGS, ID = 8mA  
VGS = ±30 V, VDS = 0V  
500  
V
V
mounting  
Space savings  
High power density  
z
3.0  
5.5  
z
± 200 nA  
100 μA  
IDSS  
VDS = VDSS  
VGS = 0V  
TJ = 125°C  
5
mA  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
60 mΩ  
DS98958F(07/07)  
© 2007 IXYS CORPORATION, All rights reserved  
IXFB80N50Q2  
Symbol  
Test Conditions  
Characteristic Values  
Min. Typ. Max.  
PLUS264TM (IXFB) Outline  
(TJ = 25°C, unless otherwise specified)  
gfs  
VDS = 10V, ID = 0.5 • ID25, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
50  
65  
S
Ciss  
Coss  
Crss  
15  
1610  
300  
nF  
pF  
pF  
td(on)  
tr  
td(off)  
tf  
Resistive Switching Times  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 1Ω (External)  
29  
25  
60  
11  
ns  
ns  
ns  
ns  
Qg(on)  
Qgs  
250  
80  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
120  
RthJC  
RthCK  
0.13 °C/W  
°C/W  
0.13  
Source-Drain Diode  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Symbol  
Test Conditions  
Min. Typ.  
Max.  
IS  
VGS = 0V  
80  
A
A
ISM  
Repetitive;  
320  
pulse width limited by TJM  
VSD  
IF = IS, VGS = 0V, Note 1  
1.5  
V
trr  
250  
ns  
μC  
A
IF = 25A, VGS = 0V  
-di/dt = 100 A/μs  
VR = 100 V  
QRM  
IRM  
1.4  
12  
Note: 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2 %.  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844  
one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405B2 6,759,692  
6,710,463 6771478 B2  
7,005,734B2  
IXFB80N50Q2  
Fig. 1. Output Characteristics  
@ 25 Deg. C  
Fig. 2. Extended Output Characteristics  
@ 25 deg. C  
200  
180  
160  
140  
120  
100  
80  
80  
70  
60  
50  
40  
30  
20  
10  
0
VGS = 10V  
VGS = 10V  
9V  
8V  
8V  
7V  
7V  
6V  
5V  
60  
6V  
5V  
40  
20  
0
0
2
4
6
8
VD S - Volts  
10 12 14 16 18 20  
0
0
0
1
2
3
4
5
6
VD S - Volts  
Fig. 3. Output Characteristics  
@ 125 Deg. C  
Fig. 4. RDS(on) Normalized to ID = 40A  
Value vs. Junction Temperature  
80  
70  
60  
50  
40  
30  
20  
10  
0
3
2.8  
2.6  
2.4  
2.2  
2
VGS = 10V  
VGS = 10V  
8V  
7V  
6V  
5V  
ID = 80A  
1.8  
1.6  
1.4  
1.2  
1
ID = 40A  
0.8  
0.6  
0.4  
2
4
6
VD S - Volts  
8
10  
12  
-50  
-25  
0
25  
50  
75  
100 125 150  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to  
ID = 40A Value vs. Drain Current  
Fig. 6. Drain Current vs. Case  
Temperature  
3
2.8  
2.6  
2.4  
2.2  
2
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
VGS = 10V  
External Lead Current Limit  
TJ = 125ºC  
1.8  
1.6  
1.4  
1.2  
1
TJ = 25ºC  
0.8  
40  
80 120  
I D - Amperes  
160  
200  
-50  
-25  
0
25  
TC - Degrees Centigrade  
50  
75  
100 125 150  
© 2007 IXYS CORPORATION, All rights reserved  
IXFB80N50Q2  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
140  
120  
100  
80  
120  
100  
80  
60  
40  
20  
0
TJ = -40ºC  
25ºC  
TJ = 125ºC  
25ºC  
-40ºC  
125ºC  
60  
40  
20  
0
3.5  
0.4  
0
4.5  
5.5  
6.5  
7.5  
0
20  
40  
60  
80 100 120 140 160 180  
VG S - Volts  
I D - Amperes  
Fig. 9. Source Current vs. Source-To-  
Drain Voltage  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
240  
200  
160  
120  
80  
VDS = 250V  
ID = 40A  
I
G = 10mA  
TJ = 125ºC  
40  
TJ = 25ºC  
0
0.6  
0.8  
1
1.2  
1.4  
1.6  
0
40  
80 120  
Q G - nanoCoulombs  
160  
200  
240  
280  
VS D - Volts  
Fig. 12. Maximum Transient Thermal  
Impedance  
Fig. 11. Capacitance  
100000  
10000  
1000  
1
f = 1MHz  
C
iss  
0.1  
0.01  
C
C
oss  
rss  
0.001  
100  
0.0001  
0.001  
0.01  
0.1  
1
10  
5
10  
15  
20  
VD S - Volts  
25  
30  
35  
40  
Pulse Width - Seconds  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS REF: F_80N50Q2(95)7-20-07-F  
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