Advance Technical Information
HiPerFETTM
Power MOSFETs
Q-Class
VDSS = 600 V
ID25 = 70 A
IXFB 70N60Q2
RDS(on)= 80 mΩ
≤ 250 ns
N-Channel Enhancement Mode
trr
Avalanche Rated, Low Qg, Low Intrinsic Rg
High dV/dt, Low trr
PLUS 264TM (IXFB)
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
600
600
V
V
G
(TAB)
D
S
VGS
VGSM
Continuous
Transient
±30
±40
V
V
G = Gate
D = Drain
TAB = Drain
S = Source
ID25
IDM
IAR
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
70
280
70
A
A
A
EAR
EAS
TC = 25°C
TC = 25°C
60
5.0
mJ
J
Features
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 2 Ω
20
V/ns
ꢀ
Double metal process for low gate
resistance
ꢀ
ꢀ
ꢀ
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic rectifier
PD
TJ
TC = 25°C
890
W
-55 ... +150
°C
TJM
Tstg
150
-55 ... +150
°C
°C
TL
1.6 mm (0.063 in.) from case for 10 s
300
°C
Applications
ꢀ
DC-DC converters
ꢀ
Switched-mode and resonant-mode
power supplies, >500kHz switching
ꢀ
DC choppers
ꢀ
Pulse generation
ꢀ
Symbol
VDSS
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Laser drivers
min. typ. max.
Advantages
VGS = 0 V, ID = 1mA
600
3.0
V
ꢀ
PLUS 264TM package for clip or spring
VGS(th)
IGSS
VDS = VGS, ID = 8mA
5.0 V
mounting
ꢀ
Space savings
VGS = ±30 V, VDS = 0
±200 nA
ꢀ
High power density
IDSS
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
50 µA
3 mA
RDS(on)
VGS = 10 V, ID = 0.5 • ID25
Note 1
80 mΩ
DS99006(02/03)
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