请登录

免费注册
全部商品
电子元器件
方案中心
工业品
PDF资料
购物车 0
上传BOM

产品分类

找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

会员中心
购物车
技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

IXFB60N80P

型号：

IXFB60N80P

描述：

PolarHV HiPerFET功率MOSFET[ PolarHV HiPerFET Power MOSFET ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

4 页

PDF大小：

166 K

下载PDF手册
PolarHVTM HiPerFET  
Power MOSFET  
IXFB 60N80P  
VDSS = 800 V  
ID25 60 A  
RDS(on) ≤ 140 mΩ  
≤ 250 ns  
=
N-Channel Enhancement Mode  
Avalanche Rated  
trr  
Fast Intrinsic Diode  
Symbol  
Test Conditions  
Maximum Ratings  
PLUS264TM (IXFB)  
VDSS  
VDGR  
TJ = 25° C to 150° C  
800  
800  
V
V
TJ = 25° C to 150° C; RGS = 1 MΩ  
VGSS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
(TAB)  
G
D
S
ID25  
IDM  
TC =25° C  
60  
A
A
TC = 25° C, pulse width limited by TJM  
150  
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
IAR  
TC =25° C  
30  
A
EAR  
EAS  
TC =25° C  
TC =25° C  
100  
5
mJ  
J
Features  
dv/dt  
PD  
IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS  
TJ ≤150° C, RG = 2 Ω  
,
20  
V/ns  
l
International standard packages  
Fast recovery diode  
Unclamped Inductive Switching (UIS)  
rated  
l
l
TC =25° C  
1250  
W
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
l
Low package inductance  
- easy to drive and to protect  
TL  
TSOLD  
1.6 mm (0.062 in.) from case for 10 s  
Plastic body for 10 s  
300  
260  
°C  
°C  
Advantages  
FC  
Mounting force  
30..120/7.5...2.7  
10  
N/lb  
g
l
Plus 264TM package for clip or spring  
Space savings  
Weight  
l
l
High power density  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25° C, unless otherwise specified)  
Min. Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 3 mA  
VDS = VGS, ID = 8 mA  
VGS = 30 VDC, VDS = 0  
800  
V
V
3.0  
5.0  
200  
nA  
IDSS  
VDS = VDSS  
VGS = 0 V  
25  
3000  
µA  
µA  
TJ = 125° C  
RDS(on)  
VGS = 10 V, ID = 0.5 ID25, Note 1  
140 mΩ  
DS99560E(02/06)  
© 2006 IXYS All rights reserved  
IXFB 60N80P  
Symbol  
gfs  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ. Max.  
PLUS264TM (IXFB) Outline  
VDS = 20 V; ID = 0.5 ID25, Note 1  
35  
67  
S
Ciss  
Coss  
Crss  
18  
1200  
44  
nF  
pF  
pF  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
td(on)  
tr  
td(off)  
tf  
36  
29  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 VDSS, ID =0.5 ID25  
RG = 1 Ω (External)  
110  
26  
Qg(on)  
Qgs  
250  
90  
nC  
nC  
nC  
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25  
Qgd  
78  
RthJC  
RthCS  
0.10 ° C/W  
° C/W  
0.13  
Source-Drain Diode  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ. Max.  
Symbol  
Test Conditions  
IS  
VGS = 0 V  
60  
150  
1.5  
A
ISM  
VSD  
trr  
Repetitive  
A
V
IF = IS, VGS = 0 V, Note 1  
IF = 25A, -di/dt = 100 A/µs  
250  
ns  
QRM  
IRM  
VR = 100V  
0.6  
6.0  
µC  
A
Notes:  
1. Pulse test, t ≤300 µs, duty cycle d≤ 2 %  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844  
one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,727,585  
6,534,343  
6,583,505  
6,710,405B2 6,759,692  
6,710,463 6,771,478 B2  
IXFB 60N80P  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
120  
100  
80  
60  
40  
20  
0
VGS = 10V  
7V  
V
= 10V  
7V  
GS  
6V  
6V  
5V  
5V  
6
0
0
0
0
1
2
3
4
5
7
8
9
0
3
6
9
12  
15  
18  
21  
24  
27  
30  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 30A Value  
vs. Junction Temperature  
Fig. 3. Output Characteristics  
@ 125ºC  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
3.2  
2.8  
2.4  
2
V
= 10V  
7V  
GS  
V
= 10V  
GS  
6V  
I
= 60A  
D
I
= 30A  
1.6  
1.2  
0.8  
0.4  
D
5V  
14  
0
2
4
6
8
10  
12  
16  
18  
20  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 30A Value  
vs. Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
2.8  
2.6  
2.4  
2.2  
2
70  
60  
50  
40  
30  
20  
10  
0
V
= 10V  
GS  
T
J
= 125ºC  
1.8  
1.6  
1.4  
1.2  
1
T
J
= 25ºC  
0.8  
20  
40  
60  
80  
100  
120  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
TJ - Degrees Centigrade  
ID - Amperes  
© 2006 IXYS All rights reserved  
IXFB 60N80P  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
80  
70  
60  
50  
40  
30  
20  
10  
0
130  
120  
110  
100  
90  
TJ = 125ºC  
25ºC  
- 40ºC  
80  
T
J
= - 40ºC  
70  
25ºC  
125ºC  
60  
50  
40  
30  
20  
10  
0
4
4.25 4.5 4.75  
5
5.25 5.5 5.75  
6
6.25 6.5 6.75  
0
10  
20  
30  
40  
50  
60  
70  
80  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
180  
160  
140  
120  
100  
80  
10  
9
8
7
6
5
4
3
2
1
0
V
= 400V  
DS  
I
I
= 30A  
D
G
= 10mA  
60  
T
J
= 125ºC  
40  
T
J
= 25ºC  
20  
0
0.3 0.4  
0.5 0.6  
0.7 0.8  
0.9  
1
1.1 1.2  
1.3 1.4  
0
20 40 60 80 100 120 140 160 180 200 220 240 260  
QG - NanoCoulombs  
VSD - Volts  
Fig. 12. Maximum Transient Thermal  
Resistance  
Fig. 11. Capacitance  
100,000  
10,000  
1,000  
100  
1.000  
0.100  
0.010  
0.001  
f = 1 MHz  
C
C
iss  
oss  
C
rss  
10  
0.0001  
0.001  
0.01  
0.1  
1
10  
0
5
10  
15  
20  
25  
30  
35  
40  
Pulse Width - Seconds  
VDS - Volts  
IXYS reserves the right to change limits, test conditions, and dimensions.  
厂商 型号 描述 页数 下载

ILSI

 		IXF 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A15AF 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A15AT 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A15BF 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A15BT 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A15CF 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A15CT 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A15DF 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A15DT 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A20AF 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

购物指南

支付方式

配送服务

售后服务

发票须知

优惠券使用规则

特色服务

PCBA制造

国产品牌推荐

国产料号替代

质量保证

技术资料

行业资讯

关于我们

关于壹壹捌

联系我们

联系我们

服务热线：400-618-9990

企业邮箱：sales@ic118.com

服务时间：周一至周六 8:30-17:30

壹壹捌官方微信号

PDF索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

深圳网络警察报警平台
公共信息安全网络监察
经营性网站备案信息
不良信息举报中心
工商网监电子标识
全国公安机关备案
0.187173s