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IXFB40N110P

型号：

IXFB40N110P

描述：

Polar功率MOSFET HiperFET[ Polar Power MOSFET HiPerFET ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

4 页

PDF大小：

119 K

下载PDF手册
PolarTM Power MOSFET  
HiPerFETTM  
VDSS = 1100V  
ID25 = 40A  
RDS(on) ≤ 260mΩ  
≤ 300ns  
IXFB40N110P  
N-Channel Enhancement Mode  
Avalanche Rated  
trr  
Fast Intrinsic Diode  
PLUS264TM (IXFB)  
Symbol  
Test Conditions  
Maximum Ratings  
VDSS  
VDGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1MΩ  
1100  
1100  
V
V
G
D
S
(TAB)  
VGSS  
VGSM  
Continuous  
Transient  
±30  
±40  
V
V
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
ID25  
IDM  
TC = 25°C  
40  
A
A
TC = 25°C, pulse width limited by TJM  
100  
IAR  
TC = 25°C  
TC = 25°C  
20  
2
A
J
Features  
EAS  
z Fast recovery diode  
z Unclamped Inductive Switching (UIS)  
rated  
dV/dt  
PD  
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C  
TC = 25°C  
15  
V/ns  
W
1250  
z Low package inductance  
- easy to drive and to protect  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
Advantages  
TL  
TSOLD  
1.6mm (0.062 in.) from case for 10s  
Plastic body for 10s  
300  
260  
°C  
°C  
z
Plus 264TM package for clip or spring  
mounting  
Space savings  
High power density  
FC  
Mounting force  
30..120/6.7..27  
10  
N/lb.  
g
z
z
Weight  
Applications:  
z High Voltage Switched-mode and  
resonant-mode power supplies  
z High Voltage Pulse Power Applications  
z High Voltage Discharge circuits in  
Lasers Pulsers, Spark Igniters, RF  
Generators  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 3mA  
VDS = VGS, ID = 1mA  
VGS = ±30V, VDS = 0V  
1100  
V
V
z High Voltage DC-DC converters  
z High Voltage DC-AC inverters  
3.5  
6.5  
±200  
nA  
IDSS  
VDS = VDSS  
VGS = 0V  
50  
3
μA  
mA  
TJ = 125°C  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
260 mΩ  
DS99849B(03/08)  
© 2008 IXYS CORPORATION, All rights reserved  
IXFB40N110P  
Symbol  
Test Conditions  
Characteristic Values  
PLUS264TM (IXFB) Outline  
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 20V, ID = 0.5 • ID25, Note 1  
20  
32  
S
Ciss  
Coss  
Crss  
19  
1070  
46  
nF  
pF  
pF  
VGS = 0V, VDS = 25V, f = 1MHz  
RGI  
Gate Input Resistance  
1.65  
Ω
td(on)  
tr  
td(off)  
tf  
53  
55  
ns  
ns  
ns  
ns  
Resistive Switching Times  
V
GS = 10V, VDS = 0.5 • VDSS, ID =0.5 • ID25  
110  
54  
RG = 1Ω (External)  
Qg(on)  
Qgs  
310  
95  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
142  
RthJC  
RthCS  
0.10 °C/W  
°C/W  
0.13  
Source-Drain Diode  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Symbol  
IS  
Test Conditions  
Min.  
Typ.  
Max.  
VGS = 0V  
40  
A
A
V
ISM  
Repetitive, pulse width limited by TJM  
IF = IS, VGS = 0V, Note 1  
160  
VSD  
1.5  
trr  
QRM  
IRM  
300  
ns  
μC  
A
IF = 20A, -di/dt = 100A/μs  
VR = 100V, VGS = 0V  
2.2  
16  
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXFB40N110P  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
40  
35  
30  
25  
20  
15  
10  
5
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
VGS = 10V  
8V  
VGS = 10V  
8V  
7V  
7V  
6V  
5V  
6V  
5V  
0
0
5
10  
15  
20  
25  
30  
0
0
0
1
2
3
4
5
6
7
8
9
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 20A Value  
vs. Junction Temperature  
Fig. 3. Output Characteristics  
@ 125ºC  
40  
35  
30  
25  
20  
15  
10  
5
3.0  
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
VGS = 10V  
7V  
VGS = 10V  
I D = 40A  
6V  
I D = 20A  
5V  
0
2
4
6
8
10  
12  
14  
16  
18  
20  
22  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 20A Value  
vs. Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
45  
40  
35  
30  
25  
20  
15  
10  
5
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
VGS = 10V  
TJ = 125ºC  
TJ = 25ºC  
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
10  
20  
30  
40  
50  
60  
70  
80  
90  
TC - Degrees Centigrade  
ID - Amperes  
© 2008 IXYS CORPORATION, All rights reserved  
IXFB40N110P  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
TJ = - 40ºC  
25ºC  
TJ = 125ºC  
25ºC  
- 40ºC  
125ºC  
0
0
0
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
55  
450  
10  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
1.1  
35  
7.5  
1.2  
40  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
16  
14  
12  
10  
8
120  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
VDS = 550V  
I D = 20A  
I G = 10mA  
6
TJ = 125ºC  
4
TJ = 25ºC  
2
0
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
0
50  
100  
150  
200  
250  
300  
350  
400  
VSD - Volts  
QG - NanoCoulombs  
Fig. 12. Maximum Transient Thermal  
Impedance  
Fig. 11. Capacitance  
100,000  
10,000  
1,000  
100  
1.000  
0.100  
0.010  
0.001  
f
= 1 MHz  
C
iss  
C
C
oss  
rss  
10  
0
5
10  
15  
20  
25  
30  
0.0001  
0.001  
0.01  
0.1  
1
Pulse Width - Seconds  
VDS - Volts  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS REF: F_40N110P(97) 03-28-08-A  
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