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IXFB38N100Q2_08

型号：

IXFB38N100Q2_08

描述：

HiPerFET功率MOSFET Q2级[ HiPerFET Power MOSFET Q2-Class ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

4 页

PDF大小：

126 K

下载PDF手册
HiPerFETTM  
Power MOSFET  
Q2-Class  
VDSS = 1000V  
ID25 = 38A  
IXFB38N100Q2  
R
≤ 250mΩ  
trrDS(on) ≤ 300ns  
N-Channel Enhancement Mode  
Avalanche Rated, Low Qg, Low Intrinsic RG  
High dV/dt, Low trr  
PLUS264TM( IXFB)  
Symbol  
Test Conditions  
Maximum Ratings  
VDSS  
VDGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1MΩ  
1000  
1000  
V
V
VGSS  
VGSM  
Continuous  
Transient  
± 30  
± 40  
V
V
G
( TAB )  
D
S
ID25  
IDM  
TC = 25°C  
TC = 25°C, pulse width limited by TJM  
38  
152  
A
A
G = Gate  
S = Source  
D
= Drain  
IA  
EAS  
TC = 25°C  
TC = 25°C  
38  
5
A
J
TAB = Drain  
Features  
dV/dt  
PD  
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C  
TC = 25°C  
20  
890  
V/ns  
W
z Double metal process for low gate  
resistance  
TJ  
-55 ... +150  
°C  
z Unclamped Inductive Switching (UIS)  
rated  
TJM  
Tstg  
150  
-55 ... +150  
°C  
°C  
z Low package inductance  
- easy to drive and to protect  
z Fast intrinsic rectifier  
TL  
TSOLD  
1.6 mm (0.063 in.) from case for 10s  
Plastic body for 10s  
300  
260  
°C  
°C  
FC  
Mounting force  
30..120/6.7..27  
10  
N / lbs  
g
Applications  
Weight  
z
DC-DC converters  
z
Switched-mode and resonant-mode  
power supplies, >500kHz switching  
z
DC choppers  
z Pulse generation  
z Laser drivers  
Symbol  
Test Conditions  
Characteristic Values  
Advantages  
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ. Max.  
z
PLUS 264TM package for clip or spring  
BVDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 1mA  
VDS = VGS, ID = 8mA  
VGS = ±30 V, VDS = 0V  
1000  
V
V
mounting  
Space savings  
High power density  
z
3.0  
5.5  
z
± 200 nA  
50 μA  
IDSS  
VDS = VDSS  
VGS = 0V  
TJ = 125°C  
3
mA  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
250 mΩ  
DS98949F(05/08)  
© 2008 IXYS CORPORATION, All rights reserved  
IXFB38N100Q2  
Symbol  
Test Conditions  
Characteristic Values  
PLUS264TM (IXFB) Outline  
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 20V, ID = 0.5 • ID25, Note 1  
24  
40  
S
Ciss  
Coss  
Crss  
13.5  
1035  
180  
nF  
pF  
pF  
VGS = 0V, VDS = 25V, f = 1MHz  
td(on)  
tr  
td(off)  
tf  
25  
28  
57  
15  
ns  
ns  
ns  
ns  
Resistive Switching Times  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 1Ω (External)  
Qg(on)  
Qgs  
250  
60  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
105  
RthJC  
RthCS  
0.14 °C/W  
°C/W  
0.13  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ.  
Max.  
IS  
VGS = 0V  
38  
A
A
ISM  
VSD  
trr  
Repetitive, pulse width limited by TJM  
IF = IS, VGS = 0V, Note 1  
152  
1.5  
V
300  
ns  
IF = 25A, VGS = 0V  
-di/dt = 100 A/μs  
VR = 100 V  
QRM  
IRM  
1.4  
9
μC  
A
Note: 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2 %.  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXFB38N100Q2  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
40  
35  
30  
25  
20  
15  
10  
5
80  
70  
60  
50  
40  
30  
20  
10  
VGS = 10V  
VGS = 10V  
6V  
6V  
5V  
5V  
0
0
0
0
0
1
2
3
4
5
6
7
VDS - Volts  
8
9
10 11 12  
0
2
4
6
8
10 12 14 16 18 20 22 24  
VDS - Volts  
Fig. 3. Output Characteristics  
@ 125ºC  
D = 19A  
Fig. 4. RDS(on) Normalized to I  
Value vs. Junction Temperature  
40  
35  
30  
25  
20  
15  
10  
5
3.0  
2.6  
2.2  
1. 8  
1. 4  
1. 0  
0.6  
0.2  
VGS = 10V  
6V  
VGS = 10V  
I D= 38A  
5V  
I D= 19A  
0
2
4
6
8
10 12 14 16 18 20 22 24  
VDS - Volts  
-50  
-25  
0 75  
TJ - Degrees Centigrade  
25  
50  
100  
125  
150  
D = 19A  
Fig. 5. RDS(on) Normalized to I  
Value vs. Drain Current  
Fig. 6. Drain Current vs.  
Case Temperature  
2.6  
2.4  
2.2  
2.0  
1. 8  
1. 6  
1. 4  
1. 2  
1. 0  
0.8  
40  
35  
30  
25  
20  
15  
10  
5
VGS = 10V  
º
TJ = 125 C  
º
TJ = 25 C  
0
10  
20  
30  
40  
I D - Amperes  
50  
60  
70  
80  
-50  
-25  
0 100  
TC - Degrees Centigrade  
25  
50  
75  
125  
150  
© 2008 IXYS CORPORATION, All rights reserved  
IXFB38N100Q2  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
80  
70  
60  
50  
40  
30  
20  
10  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
TJ = - 40 C  
º
TJ = 125  
25  
- 40  
º
º
º
C
C
C
25 C  
º
125 C  
º
0
0
0
10  
20  
30  
40  
50  
60  
70  
250  
10  
3.0  
3.5  
4.0  
4.5  
VGS - Volts  
5.0  
5.5  
6.0  
1.2  
40  
I D - Amperes  
Fig. 9. Source Current vs. Source-To-  
Drain Voltage  
Fig. 10. Gate Charge  
10  
8
6
4
2
0
90  
80  
70  
60  
50  
40  
30  
20  
10  
VDS = 500V  
I D= 19A  
I G= 10mA  
TJ = 125 C  
º
TJ = 25 C  
º
0
0
50  
100  
150  
200  
0.2  
0.4  
0.6  
VSD - Volts  
0.8  
1.0  
Q G - nanoCoulombs  
Fig. 12. Maximum Transient Thermal  
Impedance  
Fig. 11. Capacitance  
100000  
10000  
100 0  
1. 00 0  
f = 1MHz  
C
iss  
0.100  
0.010  
0.001  
C
oss  
C
rss  
10 0  
0.0001  
0.001  
0.01 0.1  
Pulse Width - Seconds  
1
0
5
10  
15 20  
VDS - Volts  
25  
30  
35  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS REF: F_38N100Q2(95) 5-27-08-B  
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