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IXFB30N120P

型号：

IXFB30N120P

描述：

极地HiPerFET功率MOSFET[ Polar HiPerFET Power MOSFET ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

141 K

下载PDF手册
PolarTM HiPerFETTM  
Power MOSFET  
VDSS = 1200V  
ID25 = 30A  
IXFB30N120P  
RDS(on) ≤ 350mΩ  
N-Channel Enhancement Mode  
Avalanche Rated  
trr  
≤ 300ns  
Fast Intrinsic Diode  
PLUS264TM  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 150°C  
1200  
V
V
V
V
G
D
S
VDGR  
VGSS  
VGSM  
TJ = 25°C to 150°C, RGS = 1MΩ  
Continuous  
1200  
± 30  
± 40  
Tab  
Transient  
G = Gate  
D
= Drain  
S
= Source  
Tab = Drain  
ID25  
IDM  
TC = 25°C  
30  
75  
A
A
TC = 25°C, Pulse Width Limited by TJM  
IA  
TC = 25°C  
TC = 25°C  
15  
A
J
EAS  
2.0  
Features  
dv/dt  
PD  
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C  
TC = 25°C  
15  
1250  
V/ns  
W
z Fast Intrinsic Diode  
z Avalanche Rated  
z Low RDS(ON) and QG  
z Low Package Inductance  
TJ  
-55 ... +150  
150  
°C  
TJM  
°C  
Tstg  
-55 ... +150  
300  
°C  
Advantages  
TL  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10s  
°C  
z
Plus 264TM Package for Clip or Spring  
TSOLD  
FC  
260  
°C  
Mounting  
z High Power Density  
z Easy to Mount  
z Space Savings  
Mounting Torque  
30..120/6.7..27  
10  
N/lb.  
g
Weight  
Applications  
z High Voltage Switch-Mode and  
Resonant-Mode Power Supplies  
z High Voltage Pulse Power  
Applications  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
1200  
3.5  
Typ. Max.  
z High Voltage Discharge Circuits in  
Laser Pulsers  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 3mA  
VDS = VGS, ID = 1mA  
VGS = ± 30V, VDS = 0V  
VDS = VDSS, VGS = 0V  
V
V
Spark Igniters, RF Generators  
z High Voltage DC-DC Coverters  
z High Voltage DC-AC Inverters  
6.5  
± 300 nA  
IDSS  
50 μA  
TJ = 125°C  
5.0 mA  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
350 mΩ  
DS99825B(02/10)  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXFB30N120P  
Symbol  
Test Conditions  
Characteristic Values  
PLUS264TM (IXFB) Outline  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 20V, ID = 0.5 • ID25, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
13  
22  
S
Ciss  
Coss  
Crss  
22.5  
950  
28  
nF  
pF  
pF  
RGi  
Gate Input Resistance  
1.64  
Ω
td(on)  
tr  
td(off)  
tf  
57  
60  
95  
56  
ns  
ns  
ns  
ns  
Resistive Switching Times  
V
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 1Ω (External)  
Qg(on)  
Qgs  
310  
104  
137  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
RthJC  
RthCS  
0.10 °C/W  
°C/W  
0.13  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ. Max.  
IS  
VGS = 0V  
30  
120  
1.5  
A
A
V
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
trr  
300 ns  
IF = 0.5 • ID25, VGS = 0V  
QRM  
IRM  
1.6  
μC  
-di/dt = 100A/μs  
VR = 100V  
14  
A
Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,727,585  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,534,343  
6,583,505  
6,710,405 B2 6,759,692  
6,710,463  
6,771,478 B2 7,071,537  
IXFB30N120P  
Fig. 1. Output Characteristics @ TJ = @ 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
30  
25  
20  
15  
10  
5
70  
60  
50  
40  
30  
20  
10  
0
VGS = 10V  
9V  
VGS = 10V  
8V  
8V  
7V  
6V  
7V  
6V  
0
0
1
2
3
4
5
6
7
8
9
10  
0
5
10  
15  
20  
25  
30  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 15A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
30  
25  
20  
15  
10  
5
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
VGS = 10V  
8V  
VGS = 10V  
I D = 30A  
7V  
I D = 15A  
6V  
5V  
0
0
2
4
6
8
10  
12  
14  
16  
18  
20  
22  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 15A Value vs.  
Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
35  
30  
25  
20  
15  
10  
5
2.6  
2.4  
2.2  
2
VGS = 10V  
TJ = 125ºC  
1.8  
1.6  
1.4  
1.2  
1
TJ = 25ºC  
0
0.8  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0
10  
20  
30  
40  
50  
60  
70  
TC - Degrees Centigrade  
ID - Amperes  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXFB30N120P  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
30  
25  
20  
15  
10  
5
35  
30  
25  
20  
15  
10  
5
TJ = - 40ºC  
25ºC  
TJ = 125ºC  
25ºC  
- 40ºC  
125ºC  
0
0
0
5
10  
15  
20  
25  
30  
4.0  
0.3  
0
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
1.3  
40  
VGS - Volts  
ID - Amperes  
Fig. 10. Gate Charge  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
16  
14  
12  
10  
8
VDS = 600V  
I D = 15A  
I G = 10mA  
TJ = 125ºC  
6
TJ = 25ºC  
4
2
0
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
1.2  
0
50  
100  
150  
200  
250  
300  
350  
400  
450  
VSD - Volts  
QG - NanoCoulombs  
Fig. 12. Forward-Bias Safe Operating Area  
Fig. 11. Capacitance  
100,000  
10,000  
1,000  
100  
100  
10  
1
R
(on) Limit  
DS  
f = 1 MHz  
100µs  
C
iss  
1ms  
C
oss  
10ms  
100ms  
T
J
= 150ºC  
Tc = 25ºC  
Single Pulse  
DC  
C
rss  
0.1  
10  
10  
100  
1,000  
10,000  
5
10  
15  
20  
25  
30  
35  
VDS - Volts  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXFB30N120P  
Fig. 13. Maximum Transient Thermal Impedance  
0.200  
0.100  
0.010  
0.001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXYS REF: F_30N120P(97)2-12-10-D  
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