IXFA4N100P
IXFP4N100P
Symbol
Test Conditions
Characteristic Values
TO-220 (IXFP) Outline
(TJ = 25°C Unless Otherwise Specified)
Min.
Typ.
Max.
gfs
VDS= 20V, ID = 0.5 • ID25, Note 1
1.8
3.0
1.6
S
RGi
Gate Input Resistance
Ω
Ciss
Coss
Crss
1456
90
pF
pF
pF
VGS = 0V, VDS = 25V, f = 1MHz
16
td(on)
tr
td(off)
tf
24
36
37
50
ns
ns
ns
ns
Resistive Switching Times
V
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 5Ω (External)
Pins: 1 - Gate
2 - Drain
Qg(on)
Qgs
26
9
nC
nC
nC
VGS= 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
12
RthJC
RthCS
0.83 °C/W
°C/W
TO-220
0.50
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C Unless Otherwise Specified)
Min.
Typ.
Max.
IS
VGS = 0V
4
A
A
V
ISM
VSD
Repetitive, Pulse Width Limited by TJM
IF = IS, VGS = 0V, Note 1
16
TO-263 (IXFA) Outline
1.3
trr
300 ns
IF = 2A, VGS = 0V, -di/dt = 100A/μs
IRM
QRM
5.30
0.34
A
VR = 100V
μC
Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728B1
6,404,065B1
6,534,343
6,583,505
6,683,344
6,710,405B2 6,759,692
6,710,463 6,771,478B2 7,071,537
6,727,585
7,005,734B2 7,157,338B2
7,063,975B2
