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IXDR35N60BD1

型号:

IXDR35N60BD1

描述:

IGBT与二极管可选[ IGBT with optional Diode ]

品牌:

IXYS[ IXYS CORPORATION ]

页数:

4 页

PDF大小:

116 K

IXDR 35N60 BD1  
VCES  
IC25  
VCE(sat) typ= 2.2 V  
= 600 V  
= 38 A  
IGBT  
with optional Diode  
High Speed,  
Low Saturation Voltage  
ISOPLUS 247TM  
C
E
G
G
C
E
Isolated back surface  
G = Gate,  
E = Emitter  
C = Collector ,  
TAB = Collector  
Symbol  
Conditions  
Maximum Ratings  
Features  
NPT IGBT technology  
low switching losses  
low tail current  
VCES  
VCGR  
TJ = 25°C to 150°C  
600  
600  
V
V
TJ = 25°C to 150°C; RGE = 20 kΩ  
no latch up  
VGES  
VGEM  
Continuous  
Transient  
±20  
±±0  
V
V
short circuit capability  
positive temperature coefficient for  
easy paralleling  
MOS input, voltage controlled  
optional ultra fast diode  
Epoxy meets UL 94V-0  
Isolated and UL registered E15±4±2  
IC25  
IC90  
ICM  
TC = 25°C  
±8  
24  
48  
A
A
A
TC = 90°C  
TC = 90°C, tp =1 ms  
RBSOA  
VGE= ±15 V, TJ = 125°C, RG = 10 Ω  
Clamped inductive load, L = ±0 µH  
ICM = 110  
VCEK < VCES  
A
Advantages  
tSC  
VGE= ±15 V, VCE = 600 V, TJ = 125°C  
10  
µs  
(SCSOA)  
RG = 10 Ω, non repetitive  
DCB Isolated mounting tab  
Meets TO-247AD package Outline  
Package for clip or spring mounting  
Space savings  
PC  
TC = 25°C  
IGBT  
125  
50  
W
W
Diode  
TJ  
-55 ... +150  
-55 ... +150  
°C  
°C  
High power density  
Tstg  
VISOL  
FC  
50/60 Hz RMS; IISOL 1 mA  
mounting force with clip  
typical  
2500  
20...120  
6
V~  
N
Typical Applications  
AC motor speed control  
DC servo and robot drives  
DC choppers  
Uninterruptible power supplies (UPS)  
Weight  
g
Symbol  
Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
Switch-mode and resonant-mode  
power supplies  
V(BR)CES  
VGE(th)  
ICES  
VGE = 0 V  
600  
±
V
V
IC = 0.7 mA, VCE = VGE  
VCE = VCES  
5
TJ = 25°C  
TJ = 125°C  
0.1 mA  
mA  
1
IGES  
VCE = 0 V, VGE = ±20 V  
IC = ±5 A, VGE = 15 V  
± 500 nA  
VCE(sat)  
2.2  
2.7  
V
IXYS reserves the right to change limits, test conditions and dimensions  
© 2006 IXYS All rights reserved  
1 - 4  
IXDR 35N60 BD1  
Symbol  
Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
ISOPLUS247TM OUTLINE  
Cies  
Coes  
Cres  
1600  
150  
90  
pF  
pF  
pF  
VCE = 25 V, VGE = 0 V, f = 1 MHz  
Qg  
IC = ±5 A, VGE = 15 V, VCE = 480V  
140  
nC  
td(on)  
tr  
td(off)  
tf  
±0  
45  
ns  
ns  
Inductive load, TJ = 125°C  
±20  
70  
ns  
IC = ±5 A, VGE = ±15 V,  
VCE = ±00 V, RG = 10 Ω  
ns  
Eon  
Eoff  
1.6  
0.8  
mJ  
mJ  
RthJC  
RthCH  
1 K/W  
K/W  
Package with heatsink compound  
0.25  
Reverse Diode (FRED) [D1 version only]  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
Symbol  
VF  
Conditions  
IF = ±5 A, VGE = 0 V  
2.1  
1.6  
2.±  
V
V
IF = ±5 A, VGE = 0 V, TJ = 125°C  
IF  
TC = 25°C  
TC = 90°C  
±5  
18  
A
A
The convex bow of substrate is typ. < 0.04 mm over plastic surface level  
of device bottom side  
This drawing will meet all dimensions requirement of JEDEC outline  
TO-247 AD except screw hole and except Lmax.  
IRM  
trr  
IF = 15 A, -diF/dt = 400 A/µs, VR = ±00 V  
VGE = 0 V, TJ = 125°C  
1±  
90  
A
ns  
trr  
IF = 1 A, -diF/dt = 100 A/µs, VR = ±0 V, VGE = 0 V  
40  
ns  
RthJC  
2.± K/W  
IXYS reserves the right to change limits, test conditions and dimensions  
© 2006 IXYS All rights reserved  
2 - 4  
IXDR 35N60 BD1  
80  
80  
11V  
9V  
VGE= 17V  
VGE= 17V  
11V  
9V  
A
A
15V  
1±V  
15V  
1±V  
IC  
IC  
60  
50  
40  
±0  
20  
10  
0
60  
50  
40  
±0  
20  
10  
0
TJ = 125°C  
TJ = 25°C  
V
0
1
2
±
4
5
6
7
V
0
1
2
±
4
5
6
7
VCE  
VCE  
Fig. 1 Typ. output characteristics  
Fig. 2 Typ. output characteristics  
80  
80  
A
A
IF  
60  
50  
40  
±0  
20  
10  
0
60  
50  
40  
±0  
20  
10  
0
IC  
TJ = 125°C  
TJ = 25°C  
TJ = 125°C  
TJ = 25°C  
VCE = 20V  
V
0
1
2
±
±
4
5
6
7
8
9
V 10  
VF  
VGE  
Fig. ± Typ. transfer characteristics  
Fig. 4 Typ. forward characteristics of  
free wheeling diode  
±0  
120  
ns  
15  
V
trr  
A
12  
trr  
IRM  
VGE  
20  
15  
10  
5
80  
9
6
±
0
40  
TJ = 125°C  
R = ±00V  
IF = 15A  
IRM  
VCE = 480V  
V
IC  
= ±0A  
IXDx±5N60B  
0
0
0
200  
400  
600  
-di/dt  
A/μs 1000  
0
20  
40  
60  
80  
100 120 nC  
QG  
Fig. 5 Typ. turn on gate charge  
Fig. 6 Typ. turn off characteristics of  
free wheeling diode  
IXYS reserves the right to change limits, test conditions and dimensions  
© 2006 IXYS All rights reserved  
± - 4  
IXDR 35N60 BD1  
4
mJ  
±
80  
ns  
60  
2.0  
mJ  
1.5  
400  
VCE = ±00V  
GE = ±15V  
V
ns  
td(on)  
td(off)  
RG = 10Ω  
TJ = 125°C  
±00  
Eoff  
Eon  
t
t
Eoff  
Eon  
2
1
0
40  
20  
0
1.0  
0.5  
0.0  
200  
100  
0
V
CE = ±00V  
GE = ±15V  
V
tr  
RG = 10Ω  
TJ = 125°C  
tf  
A
60  
10  
20  
±0  
40  
50  
IC  
60  
A
10  
20  
±0  
40  
50  
IC  
Fig. 7 Typ. turn on energy and switching  
times versus collector current  
Fig. 8 Typ. turn off energy and switching  
times versus collector current  
60  
800  
2.0  
mJ  
1.5  
2.0  
mJ  
1.5  
VCE = ±00V  
GE = ±15V  
td(on)  
ns  
V
ns  
45  
td(off)  
Eon  
IC = ±5A  
600  
Eoff  
Eon  
TJ = 125°C  
t
t
tr  
Eoff  
1.0  
0.5  
0.0  
±0  
1.0  
0.5  
0.0  
400  
200  
0
VCE = ±00V  
15  
0
VGE = ±15V  
tf  
IC = ±5A  
TJ = 125°C  
Ω
0
5
10 15 20 25 ±0 ±5 40  
0
5
10 15 20 25 ±0 ±5 40  
Ω
RG  
RG  
Fig. 9 Typ. turn on energy and switching  
times versus gate resistor  
Fig.10 Typ. turn off energy and switching  
times versus gate resistor  
120  
A
100  
10  
K/W  
1
diode  
IGBT  
ZthJC  
ICM  
80  
60  
40  
20  
0
0.1  
single pulse  
0.01  
0.001  
RG = 10Ω  
TJ = 125°C  
IXDR±0N60BD1  
0.0001  
10-5  
10-4  
10-±  
10-2  
10-1  
100  
101  
s
0
100 200 ±00 400 500 600 700  
VCE  
V
t
Fig. 11 Reverse biased safe operating area  
RBSOA  
Fig. 12 Typ. transient thermal impedance  
IXYS reserves the right to change limits, test conditions and dimensions  
© 2006 IXYS All rights reserved  
4 - 4  
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