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IXDA20N120AS_11

型号:

IXDA20N120AS_11

描述:

高压IGBT[ High Voltage IGBT ]

品牌:

IXYS[ IXYS CORPORATION ]

页数:

4 页

PDF大小:

214 K

IXDA 20N120AS  
IC25  
VCES  
= 38A  
=1200V  
High Voltage IGBT  
VCE(sat) typ = 2.4V  
Short Circuit SOA Capability  
Square RBSOA  
TAB  
1
3
h
TAB  
Features  
IGBT  
• NPT IGBT  
- low saturation voltage  
- positive temperature coefficient for  
easy paralleling  
• TO-263 package  
Symbol  
VCES  
Conditions  
Maximum Ratings  
TVJ = 25°C to 150°C  
1200  
20  
V
VGES  
V
IC25  
IC90  
TC = 25°C  
TC = 90°C  
38  
25  
A
A
- SMD assembly  
- industry standard outline  
ICM  
VCEK  
VGE = 15 V; RG = 82 W; TVJ = 125°C  
35  
VCES  
A
µs  
W
Applications  
RBSOA, clamped inductive load; L = 100 µH  
• drives  
• power supplies  
- switched mode power supplies  
- uninterruptible power supplies  
tSC  
V
CE = VCES  
;
VGE = 15 V; RG = 82 W; TVJ = 125°C  
10  
(SCSOA) non-repetitive  
Ptot  
TC = 25°C  
200  
Symbol  
Conditions  
Characteristic Values  
(TVJ = 25°C, unless otherwise specified)  
min.  
typ.  
max.  
VCE(sat)  
IC = 20 A; VGE = 15 V; TVJ = 25°C  
TVJ = 125°C  
2.4  
2.6  
3.0  
V
V
VGE(th)  
ICES  
IC = 0.6 mA; VGE = VCE  
4.5  
6.5  
0.8  
V
VCE = VCES; VGE = 0 V; TVJ = 25°C  
TVJ = 125°C  
mA  
mA  
0.8  
IGES  
VCE = 0 V; VGE  
=
20 V  
200  
nA  
td(on)  
tr  
td(off)  
tf  
Eon  
Eoff  
100  
75  
500  
70  
3.1  
2.4  
ns  
ns  
ns  
ns  
mJ  
mJ  
Inductive load; TVJ = 125°C  
VCE = 600 V; IC = 20 A  
VGE = 15 V; RG = 82 W  
Cies  
QGon  
VCE = 25 V; VGE = 0 V; f = 1 MHz  
VCE = 600 V; VGE = 15 V; IC = 18 A  
1000  
70  
pF  
nC  
RthJC  
0.63  
K/W  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2011 IXYS All rights reserved  
20110118a  
1 - 5  
IXDA 20N120AS  
Component  
Symbol  
Conditions  
Maximum Ratings  
TVJ  
Tstg  
-55...+150  
-55...+125  
°C  
°C  
Symbol  
Weight  
Conditions  
Characteristic Values  
min. typ. max.  
2
g
Millimeter  
Inches  
Dim.  
min  
max  
4.83  
min  
max  
A
4.06  
0.160  
0.190  
typ. 0.10  
typ. 0.004  
A1  
b
W
0.51  
1.14  
0.40  
1.14  
8.38  
8.00  
9.65  
6.22  
0.99  
1.40  
0.74  
1.40  
9.40  
8.89  
10.41  
8.20  
0.020  
0.045  
0.016  
0.045  
0.330  
0.315  
0.380  
0.245  
0.039  
0.055  
0.029  
0.029  
0.370  
0.350  
0.410  
0.323  
A
b2  
c
Supplier  
Option  
c2  
E
c2  
D
D1  
E
A1  
E1  
e
4
2,54 BSC  
0,100 BSC  
1 2 3  
H
14.61  
1.78  
1.02  
15.88  
2.79  
1.68  
1.52  
0.575  
0.070  
0.040  
0.625  
0.110  
0.066  
0.060  
L
L1  
L2  
1.02  
typ.  
0.02  
0.040  
typ.  
0.0008  
c
W
0.040  
0.0016  
2x e  
3x b2  
3x b  
All dimensions conform with and/or are within  
JEDEC standard.  
E1  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2011 IXYS All rights reserved  
20110118a  
2 - 5  
IXDA 20N120AS  
40  
35  
30  
25  
20  
15  
10  
5
40  
35  
30  
25  
20  
15  
10  
5
VGE = 17V  
15V  
VGE=17V  
15V  
TJ = 125°C  
TJ = 25°C  
13V  
11V  
13V  
11V  
IC  
IC  
[A]  
[A]  
9V  
9V  
0
0.0  
0
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
VCE [V]  
VCE [V]  
Fig. 1 Typ. output characteristics  
Fig. 2 Typ. output characteristics  
35  
30  
25  
20  
15  
10  
5
VCE = 20 V  
TJ = 25°C  
IC  
[A]  
0
5
6
7
8
9
10  
11  
12  
VGE [V]  
Fig. 3 Typ. transfer characteristics  
20  
15  
10  
5
VCE = 600 V  
IC  
=
25 A  
VGE  
[V]  
0
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
QG [nC]  
Fig. 4 Typ. turn on gate charge  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2011 IXYS All rights reserved  
20110118a  
3 - 5  
IXDA 20N120AS  
5
4
3
2
1
0
500  
7
6
5
4
3
2
1
0
140  
120  
100  
80  
td(off)  
VCE = 600V  
VGE 15V  
400  
t
=
RG = 82Ω  
TJ = 125°C  
300  
Eoff  
Eon  
VCE = 600V  
VGE 15V  
td(on)  
tr  
t
[ns]  
200  
=
60  
[mJ]  
[mJ]  
[ns]  
RG = 82Ω  
TJ = 125°C  
40  
20  
0
Eoff  
100  
Eon  
tf  
0
40  
0
10  
20  
30  
0
10  
20  
30  
40  
IC [A]  
IC [A]  
Fig. 5 Typ. turn on energy and switching  
times versus collector current  
Fig. 6 Typ. turn off energy and switching  
times versus collector current  
4
3
2
1
0
1600  
1200  
800  
12  
240  
160  
VCE = 600V  
VGE 15V  
VCE = 600V  
td(on)  
tr  
=
VGE  
= 15V  
td(off)  
IC = 20A  
IC = 20A  
TJ = 125°C  
TJ = 125°C  
8
4
0
t
Eoff  
t
Eoff  
Eon  
[ns]  
[mJ]  
[ns]  
[mJ]  
80  
400  
0
Eon  
tf  
0
350  
0
50  
100  
150  
200  
250  
300  
350  
0
50  
100  
150  
200  
250  
300  
RG [Ω]  
RG [Ω]  
Fig. 7 Typ. turn on energy and switching  
times versus gate resistor  
Fig.8 Typ. turn off energy and switching  
times versus gate resistor  
10  
1
40  
35  
30  
25  
20  
15  
10  
5
TVJ = 125°C  
VR = 600 V  
TVJ = 125°C  
IF = 30 A  
VR = 600 V  
0.1  
0.01  
ZthJC  
RG  
TJ = 125°C  
CEK < VCES  
= 82 Ω  
ICM  
[K/W]  
V
[A]  
0.001  
0.0001  
single pulse  
0
0.00001 0.0001  
0.001  
0.01  
0.1  
1
0
200  
400  
600  
800 1000 1200 1400  
t [s]  
VCE [V]  
Fig. 9 Reverse biased safe operating area  
RBSOA  
Fig. 10 Typ. transient thermal impedance  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2011 IXYS All rights reserved  
20110118a  
4 - 5  
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