IWPH01-02
SI PIN PHOTODIODE
Visible to infrared range
Plastic package 7 mm x 7.8 mm
Active area size 2.8 mm x 2.8 mm
Absolute maximum ratings
Parameter
Max.
35
Units
V
VR max
P max
Topr
Reverse voltage
Power dissipation
Operating temperature
Storage temperature
150
mW
°C
-25 to +85
-40 to +100
Tstg
Electrical and optical characteristics (Ta=25 ºC, unless otherwise noted)
Parameter
Typ
320 to 1100
960
Max
Units
nm
Conditions
Spectral response range
Peak sensitivity wavelength
Photo sensitivity
λ
λp
S
0.57
A/W
960 nm
660 nm
780 nm
830 nm
100 lx
0.38
0.46
0.48
Isc
Short circuit current
Dark current
7.5
µA
ID
0.1
10
nA
VR=12V
TCID
1.15
times/°C
Temp. coefficient of ID
NEP
1.0x10-14
W/Hz1/2
VR=12V
Package outline (unit: mm, tolerance unless otherwise noted: ±0.1)
7.0±0.2
2.7±0.2
3.5±0.2
active area
Center of
Active
<0.8 (note 1)
area
Incident
light
2.8x2.8
0.51+0.14
IWPH01-02A
1.4
<0.8 (note 1)
2.3 ± 0.3
1.0
0.51+0.14
0.45±0.14
5.08
IWPH01-02B
Korzhenevskogo 12, Minsk, 220108 Republic of
Belarus
Fax:
+375 (17) 278 28 22,
1
Phone: +375 (17) 278 07 11, 212 24 70, 212 24 61,
212 69 16
E-mail: office@bms.by
URL: www.bms.by
