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IXXH50N60C3D1

型号：

IXXH50N60C3D1

描述：

极端的光透过， IGBT为20-60 kHz开关[ Extreme Light Punch Through IGBT for 20-60 kHz Switching ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

7 页

PDF大小：

194 K

下载PDF手册
Advance Technical Information  
XPTTM 600V  
IXXH50N60C3D1  
VCES = 600V  
IC110 = 50A  
VCE(sat) ≤ 2.30V  
tfi(typ) = 42ns  
GenX3TM w/ Diode  
Extreme Light Punch Through  
IGBT for 20-60 kHz Switching  
TO-247 AD  
Symbol  
Test Conditions  
Maximum Ratings  
VCES  
VCGR  
TJ = 25°C to 175°C  
600  
600  
V
V
G
TJ = 25°C to 175°C, RGE = 1MΩ  
C
Tab  
=
E
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
G = Gate  
E = Emitter  
C
Collector  
IC25  
IC110  
IF110  
TC = 25°C  
TC = 110°C  
TC = 110°C  
100  
50  
30  
A
A
A
Tab = Collector  
ICM  
TC = 25°C, 1ms  
200  
A
IA  
EAS  
TC = 25°C  
TC = 25°C  
25  
A
Features  
200  
mJ  
z Optimized for 20-60kHz Switching  
z Square RBSOA  
SSOA  
VGE = 15V, TVJ = 150°C, RG = 5Ω  
Clamped Inductive Load  
ICM = 100  
A
μs  
W
(RBSOA)  
@ ≤ VCES  
z Anti-Parallel Ultra Fast Diode  
z Avalanche Capability  
tsc  
VGE= 15V, VCE = 360V, TJ = 150°C  
10  
(SCSOA)  
RG = 22Ω, Non Repetitive  
z Short Circuit Capability  
z International Standard Package  
PC  
TC = 25°C  
600  
TJ  
TJM  
Tstg  
-55 ... +175  
175  
°C  
°C  
°C  
Advantages  
-55 ... +175  
z High Power Density  
z 175°C Rated  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
z Extremely Rugged  
z Low Gate Drive Requirement  
Md  
Mounting Torque  
1.13/10  
6
Nm/lb.in.  
g
Weight  
Applications  
Symbol  
Test Conditions  
Characteristic Values  
z Power Inverters  
z UPS  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
600  
3.0  
Typ.  
Max.  
BVCES  
VGE(th)  
ICES  
IC = 250μA, VGE= 0V  
IC = 250μA, VCE = VGE  
VCE = VCES, VGE= 0V  
V
V
z Motor Drives  
z SMPS  
5.5  
z PFC Circuits  
z Battery Chargers  
z Welding Machines  
z Lamp Ballasts  
25 μA  
TJ = 150°C  
TJ = 150°C  
3 mA  
IGES  
VCE = 0V, VGE = ±20V  
±100 nA  
VCE(sat)  
IC = 36A, VGE = 15V, Note 1  
1.95  
2.45  
2.30  
V
V
© 2010 IXYS CORPORATION, All Rights Reserved  
DS100274(12/10)  
IXXH50N60C3D1  
Symbol Test Conditions  
(TJ = 25°C Unless Otherwise Specified)  
Characteristic Values  
TO-247 (IXXH) Outline  
Min.  
Typ.  
Max.  
gfs  
Cie  
Coes  
Cres  
IC = 36A, VCE = 10V, Note 1  
VCE = 25V, VGE = 0V, f = 1MHz  
11  
18  
S
2320  
138  
42  
pF  
pF  
pF  
s
∅ P  
1
2
3
Qg  
64  
18  
25  
nC  
nC  
nC  
Qge  
Qgc  
IC = 36A, VGE = 15V, VCE = 0.5 • VCES  
td(on)  
tri  
Eon  
td(off)  
tfi  
24  
40  
ns  
ns  
mJ  
ns  
ns  
e
Inductive load, TJ = 25°C  
Terminals: 1 - Gate  
3 - Emitted  
2 - Collector  
IC = 36A, VGE = 15V  
0.72  
62  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
VCE = 360V, RG = 5Ω  
100  
42  
Note 2  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
Eof  
0.33  
0.55 mJ  
f
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
td(on)  
tri  
25  
44  
ns  
ns  
Inductive load, TJ = 150°C  
IC = 36A, VGE = 15V  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
Eon  
td(off)  
tfi  
1.46  
80  
mJ  
ns  
20.80 21.46  
15.75 16.26  
VCE = 360V, RG = 5Ω  
90  
ns  
e
L
L1  
5.20  
19.81 20.32  
4.50  
5.72 0.205 0.225  
Note 2  
.780 .800  
.177  
Eoff  
0.48  
mJ  
∅P 3.55  
3.65  
.140 .144  
RthJC  
RthCS  
0.25 °C/W  
°C/W  
Q
5.89  
6.40 0.232 0.252  
0.21  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
Reverse Diode (FRED)  
Symbol Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min. Typ.  
Max.  
VF  
IF = 24A, VGE = 0V, Note 1  
2.7  
V
V
TJ = 150°C  
1.6  
IRM  
trr  
TJ = 100°C  
TJ = 100°C  
4
A
ns  
ns  
IF = 30A, VGE = 0V, -diF/dt = 100A/μs,  
VR = 100V  
IF = 1A, VGE = 0V, -diF/dt = 100A/μs, VR = 30V  
100  
25  
RthJC  
0.9 °C/W  
Notes:  
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a  
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test  
conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXXH50N60C3D1  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
Fig. 1. Output Characteristics @ TJ = 25ºC  
160  
140  
120  
100  
80  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
VGE = 15V  
VGE = 15V  
14V  
13V  
14V  
13V  
12V  
11V  
10V  
12V  
11V  
10V  
60  
40  
9V  
20  
9V  
7V  
8V  
6V  
0
0
0
0.5  
1
1.5  
2
2.5  
3
0
5
10  
15  
20  
25  
30  
VCE - Volts  
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 150ºC  
1.8  
1.7  
1.6  
1.5  
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
55  
VGE = 15V  
VGE = 15V  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
14V  
13V  
12V  
11V  
I C = 54A  
10V  
9V  
I C = 36A  
8V  
6V  
I C = 18A  
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage vs.  
Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
6.0  
5.5  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
TJ = 25ºC  
I C = 54A  
TJ = 150ºC  
25ºC  
36A  
- 40ºC  
18A  
4
5
6
7
8
9
10  
11  
12  
13  
8
9
10  
11  
12  
13  
14  
15  
VGE - Volts  
VGE - Volts  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXXH50N60C3D1  
Fig. 7. Transconductance  
Fig. 8. Gate Charge  
32  
28  
24  
20  
16  
12  
8
16  
14  
12  
10  
8
VCE = 300V  
I C = 36A  
TJ = - 40ºC, 25ºC, 150ºC  
I
G = 10mA  
6
4
4
2
0
0
0
0
1
10  
20  
30  
40  
50  
60  
70  
80  
90  
100  
0
10  
20  
30  
40  
50  
60  
70  
QG - NanoCoulombs  
IC - Amperes  
Fig. 10. Reverse-Bias Safe Operating Area  
Fig. 9. Capacitance  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
10,000  
1,000  
100  
= 1 MHz  
f
C
ies  
C
C
oes  
TJ = 150ºC  
RG = 5  
Ω
res  
dv / dt < 10V / ns  
10  
100  
200  
300  
500  
400600  
5
10  
15  
20  
25  
30  
35  
40  
VCE - Volts  
VCE - Volts  
Fig. 12. Maximum Transient Thermal Impedance  
Fig. 11. Forward-Bias Safe Operating Area  
aasss  
1000  
100  
10  
0.4  
VCE(sat) Limit  
0.1  
25µs  
100µs  
1ms  
1
10ms  
TJ = 175ºC  
DC  
TC = 25ºC  
Single Pulse  
0.1  
0.01  
0.00001  
10  
100  
1000  
0.0001  
0.001  
0.01  
0.1  
1
VDS - Volts  
Pulse Width - Second  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXXH50N60C3D1  
Fig. 13. Inductive Switching Energy Loss vs.  
Gate Resistance  
Fig. 14. Inductive Switching Energy Loss vs.  
Collector Current  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
5.5  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
E
E
on - - - -  
VGE = 15V  
E
E
on - - - -  
off  
RG = 5  
off  
TJ = 150ºC  
TJ = 150ºC , VGE = 15V  
VCE = 360V  
Ω ,  
VCE = 360V  
I C = 54A  
TJ = 25ºC  
I C = 36A  
18  
22  
26  
30  
34  
38  
42  
46  
50  
54  
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
RG - Ohms  
IC - Amperes  
Fig. 15. Inductive Switching Energy Loss vs.  
Junction Temperature  
Fig. 16. Inductive Turn-off Switching Times vs.  
Gate Resistance  
120  
110  
100  
90  
350  
300  
250  
200  
150  
100  
50  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
3.4  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
E
E
on - - - -  
t f i  
t
d(off) - - - -  
off  
RG = 5  
VGE = 15V  
Ω ,  
TJ = 150ºC, GE = 15V  
V
VCE = 360V  
CE = 360V  
V
I C = 54A  
I C = 36A  
80  
I C = 54A  
70  
I C = 36A  
60  
50  
0
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
25  
50  
75  
100  
125  
150  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 17. Inductive Turn-off Switching Times vs.  
Collector Current  
Fig. 18. Inductive Turn-off Switching Times vs.  
Junction Temperature  
120  
90  
85  
80  
75  
70  
65  
60  
55  
50  
45  
40  
160  
140  
120  
100  
80  
120  
tf i  
td(on)  
- - - -  
110  
100  
90  
t f i  
td(off)  
- - - -  
110  
100  
90  
RG = 5  
, VGE = 15V  
Ω
RG = 5  
,
VGE = 15V  
Ω
VCE = 360V  
VCE = 360V  
I C = 36A  
TJ = 150ºC  
80  
70  
80  
60  
60  
70  
I C = 54A  
50  
40  
60  
40  
TJ = 25ºC  
20  
50  
30  
20  
0
40  
25  
50  
75  
100  
125  
150  
18  
22  
26  
30  
34  
38  
42  
46  
50  
54  
TJ - Degrees Centigrade  
IC - Amperes  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXXH50N60C3D1  
Fig. 20. Inductive Turn-on Switching Times vs.  
Fig. 19. Inductive Turn-on Switching Times vs.  
Gate Resistance  
Collector Current  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
30  
140  
130  
120  
110  
100  
90  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
tr i  
td(on)  
- - - -  
, VGE = 15V  
tr i  
td(on) - - - -  
29  
28  
27  
26  
25  
24  
23  
22  
21  
RG = 5  
Ω
TJ = 150ºC, VGE = 15V  
VCE = 360V  
VCE = 360V  
TJ = 150ºC  
80  
I C = 36A  
70  
60  
TJ = 25ºC  
I C = 54A  
50  
40  
30  
18  
22  
26  
30  
34  
38  
42  
46  
50  
54  
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
IC - Amperes  
RG - Ohms  
Fig. 21. Inductive Turn-on Switching Times vs.  
Junction Temperature  
130  
110  
90  
32  
30  
28  
26  
24  
22  
20  
tr i  
td(on) - - - -  
RG = 5  
, VGE = 15V  
Ω
VCE = 360V  
I C = 54A  
70  
I C = 36A  
50  
30  
10  
25  
50  
75  
100  
125  
150  
TJ - Degrees Centigrade  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXXH50N60C3D1  
60  
A
1000  
nC  
30  
A
TVJ= 100°C  
VR = 300V  
TVJ = 100°C  
VR = 300V  
50  
40  
30  
20  
10  
0
25  
800  
IRM  
IF= 60A  
IF= 30A  
IF= 15A  
Qr  
IF  
20  
15  
10  
5
IF= 60A  
IF= 30A  
IF= 15A  
600  
400  
200  
0
TVJ =150°C  
TVJ =100°C  
TVJ = 25°C  
0
A/μs  
1000  
0
1
2
3 V  
VF  
100  
1000  
0
200  
400  
600  
A/μs  
-diF/dt  
-diF/dt  
Fig. 24. Peak Reverse Current IRM  
Versus -diF/dt  
Fig. 23. Reverse Recovery Charge Qr  
Versus -diF/dt  
Fig. 22. Forward Current IF Versus VF  
2.0  
90  
20  
1.00  
μs  
TVJ = 100°C  
TVJ = 100°C  
IF = 30A  
VR = 300V  
V
ns  
VFR  
15  
tfr  
trr  
1.5  
Kf  
0.75  
0.50  
0.25  
0.
tfr  
IF = 60A  
IF = 30A  
80  
VFR  
IF = 15A  
1.0  
10  
5
IRM  
70  
Qr  
0.5  
0.0  
60  
0
A/μs  
1000  
0
40  
80  
120  
160  
0
200  
400  
600  
1000  
A/μs  
0
200  
400  
600  
°C  
diF/dt  
TVJ  
-diF/dt  
Fig. 26. Recovery Time trr Versus  
-diF/dt  
Fig. 27. Peak Forward Voltage VFR  
and tfr Versus diF/dt  
Fig. 25. Dynamic Parameters Qr, IRM  
Versus TVJ  
1
K/W  
Constants for ZthJC calculation:  
i
Rthi (K/W)  
ti (s)  
0.1  
ZthJC  
1
2
3
0.502  
0.193  
0.205  
0.0052  
0.0003  
0.0162  
0.01  
DSEP 29-06  
0.001  
0.00001  
s
0.0001  
0.001  
0.01  
0.1  
1
t
Fig. 28. Transient Thermal Resistance Junction to Case  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXYS REF: IXX_50N60C3(5D)5-20-10  
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 		IXXCA1 6.0毫米×3.5 mm 2的垫陶瓷封装[ 6.0mm x 3.5 mm 2 Pads Ceramic Package ] 1 页

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