SOT223 NPN SILICON PLANAR HIGH CURRENT
(HIGH PERFORMANCE)TRANSISTOR
FZT855
ISSUE 4 - NOVEMBER 2001
✪
FEATURES
*
Up to 5 Amps continuous collector current, up to 10 Amp peak
C
*
*
Very low saturation voltage
Excellent hFE specified up to 10 Amps
E
PARTMARKING DETAIL -
COMPLEMENTARY TYPE -
FZT855
FZT955
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
VALUE
UNIT
Collector-Base Voltage
250
V
V
Collector-Emitter Voltage
Emitter-Base Voltage
150
6
V
Peak Pulse Current
10
A
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
IC
5
A
Ptot
3
W
°C
Tj:Tstg
-55 to +150
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 4 inch square minimum
78
