SOT223 PNP SILICON PLANAR MEDIUM
POWER HIGH GAIN TRANSISTOR
ISSUE 3 - OCTOBER 1995
FZT796A
FEATURES
*
*
*
200 Volt VCEO
C
Gain of 250 at IC=0.3 Amps
Very low saturation voltage
APPLICATIONS
Battery powered circuits
E
*
COMPLEMENTARY TYPE -
PARTMARKING DETAIL -
FZT696B
FZT796A
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
VALUE
UNIT
V
Collector-Base Voltage
-200
Collector-Emitter Voltage
Emitter-Base Voltage
-200
V
-5
V
Peak Pulse Current
-1
-0.5
A
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
IC
A
Ptot
2
W
°C
Tj:Tstg
-55 to +150
ELECTRICAL CHARACTERISTICS (at T
= 25°C)
amb
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Breakdown Voltage
Collector-Base
Collector-Emitter
V(BR)CBO -200
V(BR)CEO -200
V
V
IC=-100µA
IC=-10mA*
Emitter-Base
V(BR)EBO -5
ICBO
V
IE=-100µA
Collector Cut-Off Current
Emitter Cut-Off Current
-0.1
-0.1
VCB=-150V
µA
µA
IEBO
VEB=-4V
Collector-Emitter
Saturation Voltage
VCE(sat)
-0.2
-0.3
-0.3
V
V
V
IC=-50mA, IB=-2mA*
IC=-100mA, IB=-5mA*
IC=-200mA, IB=-20mA*
IC=-200mA,IB=-20mA*
IC=-200mA,VCE=-10V*
Base-EmitterSaturationVoltage VBE(sat)
-0.95
V
V
Base-EmitterTurn-OnVoltage
VBE(on)
hFE
-0.67
Static Forward Current
Transfer Ratio
300
300
250
100
800
IC=-10mA, VCE=-10V*
IC=-100mA, VCE=-10V*
IC=-300mA, VCE=-10V*
IC=-400mA, VCE=-10V*
Transition Frequency
fT
100
MHz IC=-50mA, VCE=-5V
f=50MHz
Input Capacitance
Output Capacitance
Switching Times
Cibo
225
12
pF
pF
VEB=-0.5V, f=1MHz
VCB=-10V, f=1MHz
Cobo
ton
toff
100
3200
ns
ns
IC=-100mA, IB1=-10mA
IB2=-10mA, VCC=-50V
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
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