SOT223 PNP SILICON PLANAR MEDIUM
POWER HIGH GAIN TRANSISTOR
ISSUE 3 OCTOBER 1995
FZT789A
FEATURES
*
*
Extremely low equivalent on-resistance; RCE(sat) 93mΩ at 3A
C
Gain of 200 at IC=2 Amps and very low saturation voltage
APPLICATIONS
Battery powered circuits, fast charge converters
*
E
C
COMPLEMENTARY TYPE -
PARTMARKING DETAIL -
FZT689B
FZT789A
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
VALUE
UNIT
V
Collector-Base Voltage
-25
Collector-Emitter Voltage
Emitter-Base Voltage
-25
V
-5
V
Peak Pulse Current
-6
A
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
IC
-3
2
A
Ptot
W
°C
Tj:Tstg
-55 to +150
ELECTRICAL CHARACTERISTICS (at T
= 25°C)
amb
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
PARAMETER
Breakdown Voltages
V(BR)CBO -25 -40
V(BR)CEO -25 -35
V
V
V
IC=-100µA
IC=-10mA*
IE=-100µA
V(BR)EBO -5
ICBO
-8.5
Collector Cut-Off Current
-0.1
10
VCB=-15V
VCB=-15V, Tamb=100°C
µA
µA
Emitter Cut-Off Current
Saturation Voltages
IEBO
-0.1
VEB=-4V
µA
VCE(sat)
-0.15 -0.25
-0.30 -0.45
-0.30 -0.50
V
V
V
IC=-1A, IB=-10mA*
IC=-2A, IB=-20mA*
IC=-3A, IB=-100mA*
VBE(sat)
VBE(on)
-0.8 -1.0
-0.8
V
V
IC=-1A, IB=-10mA*
IC=-1A, VCE=-2V*
Base-Emitter
Turn-On Voltage
Static Forward Current
Transfer Ratio
hFE
300
800
IC=-10mA, VCE=-2V
IC=-1A, VCE=-2V*
IC=-2A, VCE=-2V*
IC=-6A, VCE=-2V*
250
200
100
Transition Frequency
Input Capacitance
Output Capacitance
Switching Times
fT
100
MHz IC=-50mA, VCE=-5V, f=50MHz
Cibo
Cobo
225
25
pF
pF
VEB=-0.5V, f=1MHz
VCB=-10V, f=1MHz
IC=-500mA, IB1=-50mA
ton
toff
35
400
ns
ns
IB2=-50mA, VCC=-10V
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
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