SOT223 PNP SILICON PLANAR MEDIUM
POWER HIGH GAIN TRANSISTOR
ISSUE 3 - OCTOBER 1995
FZT788B
FEATURES
C
*
*
Low equivalent on-resistance; RCE(sat) 93mΩ at 3A
Gain of 300 at IC=2 Amps and Very low saturation voltage
E
APPLICATIONS
Battery powered circuits
*
C
COMPLEMENTAY TYPE FZT688B
PARTMARKING DETAIL FZT788B
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
VALUE
UNIT
V
Collector-Base Voltage
-15
Collector-Emitter Voltage
-15
V
Emitter-Base Voltage
-5
V
Peak Pulse Current
-8
A
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
ELECTRICAL CHARACTERISTICS (at T
IC
-3
2
A
Ptot
W
°C
Tj:Tstg
= 25°C)
-55 to +150
amb
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown Voltage V(BR)CBO -15
Collector-Emitter Breakdown Voltage V(BR)CEO -15
V
IC=-100µA
IC=-10mA*
IE=-100µA
V
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
V(BR)EBO -5
ICBO
V
-0.1
-0.1
VCB=-10V
µA
µA
IEBO
VEB=-4V
Collector-Emitter Saturation
Voltage
VCE(sat)
-0.15
-0.25
-0.45
-0.5
V
V
V
IC=-0.5A, IB=-2.5mA*
IC=-1A, IB=-5mA*
IC=-2A, IB=-10mA*
IC=-3A, IB=-50mA*
Base-Emitter
Saturation Voltage
VBE(sat)
-0.9
V
V
IC=-1A, IB=-5mA*
Base-Emitter Turn-On Voltage
VBE(on)
hFE
-0.75
IC=-1A, VCE=-2V*
Static Forward Current Transfer
Ratio
500
1500
IC=-10mA, VCE=-2V*
IC=-1A, VCE=-2V*
IC=-2A, VCE=-2V*
IC=-6A, VCE=-2V*
400
300
150
Transition Frequency
fT
100
MHz
IC=-50mA, VCE=-5V
f=50MHz
Input Capacitance
Output Capacitance
Switching Times
Cibo
225
25
pF
pF
VEB=-0.5V, f=1MHz
VCB=-10V, f=1MHz
Cobo
ton
toff
35
400
ns
ns
IC=-500mA, IB1=-50mA
IB2=-50mA, VCC=-10V
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
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